scholarly journals Carbon Nanotubes for Thin Film Transistor: Fabrication, Properties, and Applications

2013 ◽  
Vol 2013 ◽  
pp. 1-16 ◽  
Author(s):  
Yucui Wu ◽  
Xinnan Lin ◽  
Min Zhang
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Electrical Breakdown ◽  
Thin Film Transistor ◽  
Chemical Vapor ◽  
Single Walled Carbon ◽  
Growth Method

We review the present status of single-walled carbon nanotubes (SWCNTs) for their production and purification technologies, as well as the fabrication and properties of single-walled carbon nanotube thin film transistors (SWCNT-TFTs). The most popular SWCNT growth method is chemical vapor deposition (CVD), including plasma-enhanced chemical vapor deposition (PECVD), floating catalyst chemical vapor deposition (FCCVD), and thermal CVD. Carbon nanotubes (CNTs) used to fabricate thin film transistors are sorted by electrical breakdown, density gradient ultracentrifugation, or gel-based separation. The technologies of applying CNT random networks to work as the channels of SWCNT-TFTs are also reviewed. Excellent work from global researchers has been benchmarked and analyzed. The unique properties of SWCNT-TFTs have been reviewed. Besides, the promising applications of SWCNT-TFTs have been explored. Finally, the key issues to be solved in future have been summarized.

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

Growth of Single-Walled Carbon Nanotubes from Ceramic Particles by Alcohol Chemical Vapor Deposition

2008 ◽  
Vol 1 (1) ◽  
pp. 014001 ◽  
Author(s):  
Huaping Liu ◽  
Daisuke Takagi ◽  
Hiroshi Ohno ◽  
Shohei Chiashi ◽  
Tomohito Chokan ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Walled Carbon Nanotubes ◽  
Ceramic Particles ◽  
Single Walled Carbon ◽  
Walled Carbon Nanotubes

Thin-film transistors deposited by hot-wire chemical vapor deposition

2003 ◽  
Vol 430 (1-2) ◽  
pp. 220-225 ◽  
Author(s):  
B. Stannowski ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Hot Wire

Large field emission from carbon nanotubes grown on patterned catalyst thin film by thermal chemical vapor deposition

2002 ◽  
Vol 323 (1-4) ◽  
pp. 171-173 ◽  
Author(s):  
Takashi Ikuno ◽  
Tetsuro Yamamoto ◽  
Motoki Kamizono ◽  
Syunji Takahashi ◽  
Hiroshi Furuta ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Field Emission ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Field ◽  
Thermal Chemical Vapor Deposition
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