scholarly journals Fabrication of High Transparency Diamond-Like Carbon Film Coating on D263T Glass at Room Temperature as an Antireflection Layer

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Chii-Ruey Lin ◽  
Hong-Ming Chang ◽  
Chien-Kuo Chang
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Carbon Film ◽  
Single Layer ◽  
Rf Magnetron Sputtering ◽  
Refraction Index ◽  
Diamond Powder ◽  
Water Repellent ◽  
Diamond Like Carbon ◽  
Visible Wavelengths

This study intends to deposit high transmittance diamond-like carbon (DLC) thin films on D263T glass substrate at room temperature via a diamond powder target using the radio frequency (RF) magnetron sputtering technique. Moreover, various process parameters were used to tune the properties of the thin films by using the Taguchi method. Experimental results show that the content of sp3bonded carbon decreases in accordance with the effect of the substrate temperature. In addition, the hardness of all as-deposited single-layer DLC films ranges from 13.2 to 22.5 GPa, and the RMS surface roughness was improved significantly with the decrease in sputtering pressure. The water repellent of the deposited DLC films improved significantly with the increase of the sp3content, and its contact angle was larger than that of the noncoated one by 1.45 times. Furthermore, the refraction index (n) of all as-deposited DLC films ranges from 1.95 to 2.1 atλ= 600 nm. These results demonstrate that the thickness increased as the reflectance increased. DLC film under an RF power of 150 W possesses high transmissive ability (>81%) and low average reflectance ability (<9.5%) in the visible wavelengths (atλ= 400–700 nm).

Study of Photoluminescence Properties of CuxO Thin Films Prepared by Reactive Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 1792 ◽  
Author(s):  
Jiantuo Gan ◽  
Augustinas Galeckas ◽  
Vishnukanthan Venkatachalapathy ◽  
Heine N. Riise ◽  
Bengt G. Svensson ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Room Temperature ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
Considerable Improvement ◽  
Photoluminescence Properties ◽  
Radio Frequency Magnetron Sputtering ◽  
Room Temperature Photoluminescence

ABSTRACTCuxO thin films have been deposited on a quartz substrate by reactive radio frequency (rf) magnetron sputtering at different target powers Pt (140-190 W) while keeping other growth process parameters fixed. Room-temperature photoluminescence (PL) measurements indicate considerable improvement of crystallinity for the films deposited at Pt>170 W, with most pronounced excitonic features being observed in the film grown using Pt=190 W. These results corroborate well with the surface morphology of the films, which was found more flat, smooth and homogeneous for Pt >170 W films in comparison with those deposited at lower powers.

scholarly journals Formation and Characterization of Various ZnO/SiO2-Stacked Layers for Flexible Micro-Energy Harvesting Devices

2018 ◽  
Vol 8 (7) ◽  
pp. 1127 ◽  
Author(s):  
Chongsei Yoon ◽  
Buil Jeon ◽  
Giwan Yoon
Keyword(s):  
Thin Films ◽  
Energy Harvesting ◽  
Indium Tin Oxide ◽  
Control Sample ◽  
Single Layer ◽  
Rf Magnetron Sputtering ◽  
Device Performance ◽  
Polyethylene Naphthalate ◽  
Flexible Devices ◽  
Energy Harvesting Devices

In this paper, we present a study of various ZnO/SiO2-stacked thin film structures for flexible micro-energy harvesting devices. Two groups of micro-energy harvesting devices, SiO2/ZnO/SiO2 micro-energy generators (SZS-MGs) and ZnO/SiO2/ZnO micro-energy generators (ZSZ-MGs), were fabricated by stacking both SiO2 and ZnO thin films, and the resulting devices were characterized. With a particular interest in the fabrication of flexible devices, all the ZnO and SiO2 thin films were deposited on indium tin oxide (ITO)-coated polyethylene naphthalate (PEN) substrates using a radio frequency (RF) magnetron sputtering technique. The effects of the thickness and/or position of the SiO2 films on the device performance were investigated by observing the variations of output voltage in comparison with that of a control sample. As a result, compared to the ZnO single-layer device, all the ZSZ-MGs showed much better output voltages, while all the SZS-MG showed only slightly better output voltages. Among the ZSZ-MGs, the highest output voltages were obtained from the ZSZ-MGs where the SiO2 thin films were deposited using a deposition power of 150 W. Overall, the device performance seems to depend significantly on the position as well as the thickness of the SiO2 thin films in the ZnO/SiO2-stacked multilayer structures, in addition to the processing conditions.

Structural, Optical and Magnetic Properties of Co and Fe Doped ZnO Thin Films Grown by Radio Frequency Magnetron Sputtering

2006 ◽  
Vol 957 ◽  
Author(s):  
Luis Manuel Angelats ◽  
Maharaj S Tomar ◽  
Rahul Singhal ◽  
Oscar P Perez ◽  
Hector J Jimenez ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Visible Range ◽  
Radio Frequency Magnetron Sputtering ◽  
Optical And Magnetic Properties ◽  
Doped Zno ◽  
Xrd Patterns ◽  
Antiferromagnetic Behavior

ABSTRACTZn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O targets were used to grow thin films by rf magnetron sputtering. XRD patterns of the films showed a strong preferred orientation along c-axis. Zn0.90Co0.10O film showed a transmittance above 75% in the visible range, while the transmittance of the Zn0.85[Co0.50Fe0.50]0.15O film was about 45%; with three absorption peaks attributed to d-d transitions of tetrahedrally coordinated Co2+. The band gap values for Zn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O films were 2.95 and 2.70 eV respectively, which are slightly less than ZnO bulk. The Zn0.90Co0.10O film showed a relatively large positive magnetoresistance (MR) at the high magnetic field in the temperature range from 7 to 50 K, which reached 11.9% a 7K for the magnetoresistance. The lowest MR was found at 100 K. From M-H curve measured at room temperature shown a probable antiferromagnetic behavior, although was possible to observe little coercive field of 30 Oe and 40 Oe for Zn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O films, respectively.

Silicon Germanium Oxide (SixGeyO1-x-y) Infrared Sensitive Material for Uncooled Detectors

2010 ◽  
Vol 1245 ◽  
Author(s):  
Reza Anvari ◽  
Qi Cheng ◽  
Muhammad Lutful Hai ◽  
Truc Phan Bui ◽  
A. J. Syllaios ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Silicon Germanium ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Germanium Oxide ◽  
Temperature Coefficient Of Resistance ◽  
Sensitive Material

AbstractThis paper presents the formation and the characterization of silicon germanium oxide (SixGeyO1-x-y) infrared sensitive material for uncooled microbolometers. RF magnetron sputtering was used to simultaneously deposit Si and Ge thin films in an Ar/O2 environment at room temperature. The effects of varying Si and O composition on the thin film's electrical properties which include temperature coefficient of resistance (TCR) and resistivity were investigated. The highest achieved TCR and the corresponding resistivity at room temperature were -5.41 %/K and 3.16×103 ohm cm using Si0.039Ge0.875O0.086 for films deposited at room temperature.

scholarly journals Correction: High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering

2019 ◽  
Vol 7 (48) ◽  
pp. 15383-15383
Author(s):  
Shun Han ◽  
Xiaoling Huang ◽  
Mingzhi Fang ◽  
Weiguo Zhao ◽  
Shijie Xu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Performance ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Uv Detectors

Correction for ‘High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering’ by Shun Han et al., J. Mater. Chem. C, 2019, 7, 11834–11844.

Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

2012 ◽  
Vol 545 ◽  
pp. 290-293
Author(s):  
Maryam Amirhoseiny ◽  
Hassan Zainuriah ◽  
Ng Shashiong ◽  
Mohd Anas Ahmad
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

Giant Magnetoresistance in Single Layer and Multilayer Phase Separating Alloy Films

1993 ◽  
Vol 313 ◽  
Author(s):  
S. Hossain ◽  
A. Waknis ◽  
D. Seale ◽  
M. Tan ◽  
M.R. Parker ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Dependence ◽  
Giant Magnetoresistance ◽  
Room Temperature ◽  
Single Layer ◽  
Multilayer Films ◽  
Equilibrium Conditions ◽  
Ferromagnetic Layers ◽  
Novel Processing ◽  
New Phase

ABSTRACTThe phenomenon of giant magnetoresistance (GMR), previously measured only in multilayer films comprising ferromagnetic layers separated by nonmagnetic spacers, has recently been observed in single layer ‘granular’ alloy thin films prepared by cosputtering a ferromagnet and a nonmagnet which tend to phase separate (cluster) under equilibrium conditions. We have systematically studied the magnetoresistance of two new phase separating GMR systems (Ni66Fe16Co18-Ag and Co9oFelo-Ag) both of which exhibit large room temperature GMR (>11% and >14%, respectively). We have also attempted to influence the details of the field dependence of the magnetoresistance in the previously studied Co-Ag system by employing novel processing methods including interrupted sputtering and layering of the Co-Ag alloy with Cu spacers.

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