scholarly journals Optical Absorption in Nano-Structures: Classical and Quantum Models

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Anand Kulkarni ◽  
Durdu Guney ◽  
Ankit Vora

In the last decade, nano-structured materials have gained a significant interest for applications in solar cells and other optical and opto-electronic devices. Due to carrier confinement, the absorption characteristics in these structures are quite different from the absorption in bulk materials and thin films. Optical absorption coefficients of a silicon nano-wire are obtained based on a semi-classical model where the photon-electron interaction is described by the interaction of an electromagnetic wave with the electrons in the valence band of a semiconductor. The absorption characteristics showed enhanced optical absorption but no resonant peaks. In our modified model, we have identified optically active inter band transitions by performing electronic structure calculations on unit cells of nano-dimensions. The absorption spectrum obtained here shows explicit excitonic processes. This absorption is tunable from the visible region to near UV portion of the solar spectrum. In our previous work on thin films (100 nm) of ITO, we have used classical Drude model to describe free electron absorption. Using the imaginary part of the calculated complex dielectric function, we have plotted the absorption coefficient versus wavelength of the photon and compared with the experimental data showing good agreement between theory and experiment.

2013 ◽  
Vol 37 (1) ◽  
pp. 83-91 ◽  
Author(s):  
Chitra Das ◽  
Jahanara Begum ◽  
Tahmina Begum ◽  
Shamima Choudhury

Effect of thickness on the optical and electrical properties of gallium arsenide (GaAs) thin films were studied. The films of different thicknesses were prepared by vacuum evaporation method (~10-4 Pa) on glass substrates at a substrate temperature of 323 K. The film thickness was measured in situ by a frequency shift of quartz crystal. The thicknesses were 250, 300 and 500 nm. Absorption spectrum of this thin film had been recorded using UV-VIS-NIR spectrophotometer in the photon wavelength range of 300 - 2500 nm. The values of some important optical parameters of the studied films (absorption coefficient, optical band gap energy and refractive index; extinction co-efficient and real and imaginary parts of dielectric constant) were determined using these spectra. Transmittance peak was observed in the visible region of the solar spectrum. Here transmittance showed better result when thicknesses were being increased. The optical band gap energy was decreased by the increase of thickness. The refractive index increased by increasing thickness while extinction co-efficient and real and imaginary part of dielectric constant decreased. DOI: http://dx.doi.org/10.3329/jbas.v37i1.15684 Journal of Bangladesh Academy of Sciences, Vol. 37, No. 1, 83-91, 2013


2011 ◽  
Vol 299-300 ◽  
pp. 558-561 ◽  
Author(s):  
Yan Jun Zhou ◽  
Fang He ◽  
Jin Gang Qi ◽  
Yu Lin Wang

By using the sol-gel method, TiO2 thin films and Ge doped TiO2 composite thin films were fabricated onto quartz substrates. XRD, XPS and UV-vis were used to characterize the phase structure, the atomic chemical states and optical absorption of these composite TiO2 thin films. XRD results indicate that diffraction peak of anatase is observed in samples. XPS result reveals that there is Ge crystal in Ge doped films which were prepared by sol-gel method, and Ge exists as elemental Ge and GeO2 in the films. The composite TiO2 thin films by sol-gel method exhibits the absorption shift to visible region due to Ge doped TiO2 thin films.


1993 ◽  
Vol 300 ◽  
Author(s):  
J. Chan ◽  
T. Fu ◽  
N. W. Cheung ◽  
J. Ross ◽  
N. Newman ◽  
...  

ABSTRACTCrystalline aluminum nitride (AIN) thin films were formed on various substrates by using RF magnetron sputtering of an Al target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AIN/(1 11) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 °C, while the crystallinity of AIN/ (0001) A12O3 samples improved from 700 to 850 °C. The optical absorption characteristics of the AIN/(0001) A12O3 films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.


Author(s):  
Hamid Khan ◽  
Yaseen Iqbal ◽  
Matiullah Khan ◽  
S. N. Ahmad ◽  
Yi Zeng

Titanium dioxide (TiO2) is one of the most promising photocatalysts for photoelectrochemical applications due to its high chemical as well as photochemical stability. Its efficiency in practical applications is limited due to its wide bandgap, a high rate of recombination of electron–hole pairs and the weak photo-carriers separation efficiency. In this computational study, a path was followed to find out the redshift of the TiO2 light absorption edge via lead (Pb) doping. The density functional theory (DFT) results revealed that the doped TiO2 bandgap was decreased to the lower edge (2.1 eV) in the visible region resulting in a relatively better optical absorption of the material. Furthermore, doped TiO2 was found to absorb a large part of the solar spectrum. The improvement in optical absorption resulted in good photo response. The calculated results also showed a redshift in optical properties produced through the doping of Pb in TiO2.


1997 ◽  
Vol 36 (19) ◽  
pp. 4403 ◽  
Author(s):  
Jyh-Shin Chen ◽  
Shiuh Chao ◽  
Jiann-Shiun Kao ◽  
Guan-Ren Lai ◽  
Wen-Hsiang Wang

2007 ◽  
Vol 1013 ◽  
Author(s):  
Stefan Antohe ◽  
Cezar Tazlaoanu ◽  
Gabriel Socol ◽  
Larisa Magherusan ◽  
Ionut Enculescu ◽  
...  

AbstractStructural, electrical and optical characterizations of nanostructured ZnO thin films used as photosensitized electrodes in photovoltaic cells applications are reported. Nanostructured ZnO thin films were deposited on optical glass substrates by pulsed-laser deposition (PLD), their structure and morphology being optimized for photovoltaic applications. Structural analysis of the samples by X-ray diffraction revealed that the films consist of a hexagonal-close-packed wurtzite type phase ZnO, (001) preferentially oriented in the growth direction. The ZnO films are highly transparent in visible region of solar spectrum, and exhibit electrical resistivities in the range 10-4 - 10-2Ω.m


2014 ◽  
Vol 35 (6) ◽  
pp. 684-688
Author(s):  
韩舜 HAN Shun ◽  
彭赛 PENG Sai ◽  
曹培江 CAO Pei-jiang ◽  
柳文军 LIU Wen-jun ◽  
曾玉祥 ZENG Yu-xiang ◽  
...  

Author(s):  
Lu Hu ◽  
Gang Chen

Nanowires and nanotubes can serve as electrodes for polymer and electrochemical photovoltaic cells [1,2] and building blocks in other novel optical devices [3,4]. Recently photovoltaic cells based on silicon nanowire arrays have been suggested as a promising candidate for solar energy harvesting [5]. The advantage of the silicon-nanowire photovoltaic cell lies in its short collection length for excited carriers, resulting in significant improvement in carrier collection efficiency. The optical absorption characteristics of nanowire arrays in the solar spectrum, one of the key factors that determine the efficiency of solar cells, remain unclear. A detailed analysis of the optical absorption will help the design and optimization processes of the silicon nanowire solar cells. In this letter, we numerically analyze the effects of wire diameter, length and filling ratio on the optical absorption of periodic nanowire arrays, and compare the cases with the results of silicon thin films. We found that, in comparison to thin films, nanowire array based solar cells have an intrinsic antireflection effect that increases absorption in short wavelength range.


1999 ◽  
Vol 58 (4) ◽  
pp. 349-360 ◽  
Author(s):  
S.M Firoz Hasan ◽  
L Quadir ◽  
Kh.S Begum ◽  
M.A Subhan ◽  
Kh.M Mannan

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