scholarly journals Resonant Tunneling Diodes-Based Cellular Nonlinear Networks with Fault Tolerance Analysis

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Shukai Duan ◽  
Xiaofang Hu ◽  
Lidan Wang ◽  
Shiyong Gao

The resonant tunneling diodes (RTD) have found numerous applications in high-speed digital and analog circuits owing to its folded-back negative differential resistance (NDR) in current-voltage (I-V) characteristics and nanometer size. On account of the replacement of the state resistor in standard cell by an RTD, an RTD-based cellular neural/nonlinear network (RTD-CNN) can be obtained, in which the cell requires neither self-feedback nor a nonlinear output, thereby being more compact and versatile. This paper addresses the structure of RTD-CNN in detail and investigates its fault-tolerant properties in image processing taking horizontal line detection and edge extraction, for examples. A series of computer simulations demonstrates the promising fault-tolerant abilities of the RTD-CNN.

Author(s):  
Hideaki Matsuzaki ◽  
Kunihiro Arai ◽  
Koichi Maezawa ◽  
Jiro Osaka ◽  
Masafumi Yamamoto ◽  
...  

1996 ◽  
Vol 448 ◽  
Author(s):  
Akira Izumi ◽  
Noriyuki Matsubara ◽  
Yusuke Kushida ◽  
Kazuo Tsutsui ◽  
Nikolai S. Sokolov

AbstractWe proposed use of a new CdF2/CaF2 heterointerface for the formation of large conduction band discontinuities to apply quantum effect devices fabricated on Si substrates. Resonant tunneling diodes using this heterointerface on Si were fabricated and negative differential resistance whose P/V current ratio of 24 at highest was observed at room temperature.


1992 ◽  
Vol 61 (14) ◽  
pp. 1685-1687 ◽  
Author(s):  
D. H. Chow ◽  
J. N. Schulman ◽  
E. Özbay ◽  
D. M. Bloom

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