scholarly journals Special Effect of Urea as a Stabilizer in Thermal Immersion Method to Synthesis Porous Zinc Oxide Nanostructures

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
F. S. Husairi ◽  
Syahirah Mhd Ali ◽  
A. Azlinda ◽  
M. Rusop ◽  
S. Abdullah
Keyword(s):  
Zinc Nitrate ◽  
Synthesis Process ◽  
Nitrate Hexahydrate ◽  
Zno Nanostructures ◽  
Zinc Oxide Nanostructures ◽  
Immersion Method ◽  
Special Effect ◽  
Zno Nanostructure ◽  
Oxide Nanostructures ◽  
P Type

ZnO nanostructure was prepared by catalytic immersion method (90°C) with zinc nitrate hexahydrate (Zn(NO3)26H2O) as a precursors and urea (CH4N2O) as a stabilizer. Different molarity concentration ratio of Zn(NO3)26H2O to CH4N2O, 2 : 1, 1 : 4, 1 : 6, and 1 : 8 is used in this work. The effect of urea concentration used during the synthesis process is discussed. The ZnO nanostructures were characterized by using field emission scanning electron microscope (FESEM), photoluminescene (PL), andI-Vprobe. Porous nanoflakes are successfully synthesized on p-type silicon substrate coated with gold layer with different size and dimension. High intensity photoluminescence (PL) at optimum concentration indicated that urea is good stabilizer to produce ZnO nanostructures with good crytallinity. Rectifying characteristics show dramaticaly change in turn-on voltage when the concentration of urea increases in aqueous solution. This is related to the theory about p-type doping of ZnO nanostructures by nitrogen from NH3.

Effect of Urea as a Stabiliser in the Thermal Immersion Method to Synthesise Zinc Oxide Nanostructures on Porous Silicon Nanostructures

2013 ◽  
Vol 832 ◽  
pp. 644-648 ◽  
Author(s):  
F.S. Husairi ◽  
Kevin Alvin Eswar ◽  
Azlinda Ab Aziz ◽  
Mohamad Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Porous Silicon ◽  
Electrochemical Etching ◽  
Zinc Nitrate ◽  
Synthesis Process ◽  
Silicon Nanostructures ◽  
Nitrate Hexahydrate ◽  
Zno Nanostructures ◽  
Zinc Oxide Nanostructures ◽  
Immersion Method ◽  
P Type

In this work, ZnO nanostructures were prepared using the catalytic immersion method (90 °C) with zinc nitrate hexahydrate (Zn (NO3)26H2O) as a precursor, urea (CH4N2O) as a stabiliser and porous silicon nanostructures (PSi) as a substrate. PSi prepared on p-type Si by using electrochemical etching method. Different molarity concentration ratios of Zn (NO3)26H2O to CH4N2O (2:1, 1:2, 1:4 and 1:6) were used in this work. The effects of the urea concentration during the synthesis process were discussed. The ZnO nanostructures were characterised using field emission scanning electron microscope (FESEM), photoluminescence (PL) and I-V probe. Porous nanoflakes were successfully synthesised on a p-type PSi substrate that was prepared by electrochemical etching. High-intensity photoluminescence (PL) at the optimum concentration indicated that urea is a good stabiliser to produce ZnO nanostructures with good crystallinity. The high resistance of ZnO/PSi show that electrical properties of PSi dominant compare to ZnO nanostructures.

Characterization of Urea versus HMTA in the Preparation of Zinc Oxide Nanostructures by Solution-Immersion Method Grown on Gold-Seeded Silicon Substrate

2011 ◽  
Vol 364 ◽  
pp. 45-49 ◽  
Author(s):  
Azlinda Ab Azlinda ◽  
Zuraida Khusaimi ◽  
Saifollah Abdullah ◽  
Mohamad Rusop
Keyword(s):  
Zinc Oxide ◽  
Silicon Substrate ◽  
High Surface ◽  
High Surface Area ◽  
Zinc Nitrate ◽  
Nitrate Hexahydrate ◽  
Zno Nanostructures ◽  
Zinc Oxide Nanostructures ◽  
Immersion Method ◽  
Oxide Nanostructures

Zinc oxide (ZnO) nanostructures prepared by immersion method were successfully grown on gold-seeded silicon substrate using Zinc nitrate hexahydrate (Zn (NO3)2.6H2O) as a precursor, separately stabilized with non-toxic urea (CH4N2O) and hexamethylene tetraamine (HMTA). The effect of changing the stabilizer of ZnO solution on the crystal structure, morphology and photoluminescence properties of the resultant ZnO is investigated. X-ray diffraction of the synthesized ZnO shows hexagonal zincite structure. The morphology of the ZnO was characterized using Field Emission Scanning Electron Microscope (FESEM). The growth of ZnO using urea as stabilizer shows clusters of ZnO nanoflower with serrated broad petals were interestingly formed. ZnO in HMTA showed growth of nanorods. The structures has high surface area, is a potential metal oxide nanostructures to be develop for optoelectronic devices and chemical sensors. The formation of ZnO nanostructures is found to be significantly affected by the stabilizer.

scholarly journals In Situ Growth of ZnO Nanostructures on Cotton Fabric by Solochemical Process for Antibacterial Purposes

2018 ◽  
Vol 2018 ◽  
pp. 1-9 ◽  
Author(s):  
D. A. R. Souza ◽  
M. Gusatti ◽  
R. Z. Ternus ◽  
M. A. Fiori ◽  
H. G. Riella
Keyword(s):  
Electron Microscopy ◽  
Cotton Fabric ◽  
Zinc Nitrate ◽  
Nitrate Hexahydrate ◽  
Zno Nanostructures ◽  
In Situ Growth ◽  
Zinc Oxide Nanostructures ◽  
Gram Positive Bacteria ◽  
Transmission Electron

A practical and economical method was developed for the production of an antibacterial cotton fabric using zinc oxide nanostructures without the use of surface modifying agents. In this process, zinc nitrate hexahydrate and potassium hydroxide were used as starting materials and the reaction was performed at 50°C. The in situ growth of ZnO nanostructures on cotton fabric occurred in a single-stage process, and it started when the fabric samples were dipped for 1 min in the solution containing all the starting materials. The treated and untreated fabric samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), and EDS. The cotton fabrics coated with ZnO nanostructures presented an antibacterial efficiency towards Pseudomonas aeruginosa, a gram-negative bacteria, and Staphylococcus aureus (S. aureus), a gram-positive bacteria.

ZnO Nanostructures – Nanorods and Flower-Like on Si/Au Substrates by Solution-Immersion Method in Different pH of Precursor

2013 ◽  
Vol 667 ◽  
pp. 86-92 ◽  
Author(s):  
Zuraida Khusaimi ◽  
Mohamad Hafiz Mamat ◽  
Norbani Abdullah ◽  
Mohamad Rusop
Keyword(s):  
Zno Nanorods ◽  
Emission Spectra ◽  
Precursor Solution ◽  
Considerable Effect ◽  
Zinc Nitrate ◽  
Visible Emission ◽  
Nitrate Hexahydrate ◽  
Zno Nanostructures ◽  
Immersion Method ◽  
Solution Ph

Low-temperature solution immersion growth of low-dimensional ZnO nanostructures on gold-seeded Si substrate has been demonstrated. pH environment of the precursor solution, Zn(NO3)2.6H2O (zinc nitrate hexahydrate) and C6H12N4 (HMTA) was found to have considerable effect to ZnO morphology and photoluminescence. Structural, morphological and photoluminescence (PL) properties of the samples were obtained from XRD, SEM and PL-Raman characterisation. A near neutral (pH = 6.8) and acidic (pH = 5) precursor solution aided a dense near-aligned ZnO nanorods growth with smallest rods diameter of 30 and 20 nm respectively. Whereas alkaline precursor solution (pH = 9) gave rise to flower-like structures of ZnO. Chemical equations for the reactions and the role of H+ and OH- ions role in affecting the XRD diffraction peaks and morphology, are suggested. Room temperature PL emission spectra of ZnO were collected after excitation at 325 nm. UV and visible emission distinctive of ZnO were formed and the rationale for significant shifts of the visible emission was also discussed.

Influence of Ammonium in Zinc Oxide Nanostructures Hydrothermally Grown on Glass Substrate

2014 ◽  
Vol 709 ◽  
pp. 341-345
Author(s):  
Concepción Mejía-García ◽  
Elvia Díaz-Valdés ◽  
Marco Alberto Ayala-Torres ◽  
Alejandro Sánchez-Sánchez ◽  
Ana María Paniagua-Mercado ◽  
...  
Keyword(s):  
Zinc Acetate Dihydrate ◽  
Hydrothermal Process ◽  
Zinc Nitrate ◽  
Morphological Properties ◽  
Ammonium Concentration ◽  
Heating Process ◽  
Nitrate Hexahydrate ◽  
Zno Nanostructures ◽  
Zinc Oxide Nanostructures ◽  
Glass Substrates

We present the synthesis of ZnO nanostructures grown by the hydrothermal method using the rapid microwave heating process. First, 10 mM solutions of zinc acetate dihydrate and 1-propanol were three cycles spin coated on glass substrates at 2000 rpm by 70 s, 90 s and 90 s, respectively. Second, nanostructures were then grown by dipping the substrates in a solution of zinc nitrate hexahydrate, polyethyleneimine (PEI), hexamethylenetetramine and ammonia. The hydrothermal process were carried out with a commercial microwave at 300, and 600 W power settings during 20 min. The structural and morphological properties were investigated using X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). The influence of the ammonium concentration in the morphology of the nanostructures was analyzed.Keywords: ZnO, nanostructures, XRD, SEM, spin coating, ammonium, hydrothermal process.

Influence of Substrate’s Alignment Strategy to the Growth of ZnO Nano-Petals via Solution-Immersion Method

2012 ◽  
Vol 620 ◽  
pp. 60-65
Author(s):  
Azlinda Ab Aziz ◽  
Zuraida Khusaimi ◽  
Mohamad Rusop
Keyword(s):  
High Surface ◽  
High Surface Area ◽  
Zinc Nitrate ◽  
Nitrate Hexahydrate ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Immersion Method ◽  
Oxide Nanostructures ◽  
Metal Oxide Nanostructures ◽  
Alignment Strategy

Zinc oxide (ZnO) nanostructures were successfully grown on gold-seeded Si substrate prepared by a solution-immersion method using a novel mixture of an aqueous solution of Zinc nitrate hexahydrate (Zn (NO3)2.6H2O) with a non-toxic, odourless urea (CH4N2O) as a stabilizer. Structural and optical properties of resultant ZnO thin films were investigated by X-Ray Diffraction, FESEM and Photoluminescence Spectroscopy (PL). Clusters of ZnO micro-flower with serrated broad petals with the thickness of petals approximately 60 nm were interestingly formed on the film with horizontal manner of alignment during immersion process. The smallest grain size (29 nm) along (100) orientation was achieve with the alignment of substrate tilt towards 60°. The petals structure has high surface area, is a potential metal oxide nanostructures to be develop for optoelectronic devices and chemical sensors.

scholarly journals ZnO nanostructure thin film transistors on plastic substrate prepared by solution method and pH sensing properties

2020 ◽  
Vol 2 (1) ◽  
Author(s):  
Feri Adriyanto ◽  
Mohd Zainizan Sahdan ◽  
Mohd Noh Dalimin ◽  
Muhammad Nizam
Keyword(s):  
Solution Method ◽  
Zinc Nitrate ◽  
Plastic Substrate ◽  
Nitrate Hexahydrate ◽  
Zno Nanostructures ◽  
Ph Sensing ◽  
Zno Nanostructure ◽  
Ph Response ◽  
Current Saturation ◽  
Output Characteristics

<p>We fabricated a ZnO nanostructures based TFT on plastic substrate by solution method under low temperature. ZnO nanostructures were prepared by zinc nitrate hexahydrate, and hexamethylenetetramine. The device shows hard saturation characteristics and exhibits a high off-resistance. The output characteristics devices also shows current saturation and pinch off behavior, in which the high of current saturation obtained 266 mA at <em>V<sub>GS</sub></em> = 40 V and <em>V<sub>DS</sub></em> = 42.5 V. The pH response on the electrical properties was also studied. It was found that the threshold voltage shifted from 10.21 V to 13 V as pH solution gradually increased. The <em>I<sub>on</sub>/I<sub>off</sub></em> for as grown TFTs and TFTs with pH response of 10.21 shifted from 1.86 x 10<sup>5</sup> to 7.03 x 10<sup>6</sup> at <em>V<sub>DS</sub> </em>= 20 V. The obtained sensitivity of devices was 1.05 V/pH.</p>

PERFORMANCE ENHANCEMENT OF p-TYPE ORGANIC THIN FILM TRANSISTORS USING ZINC OXIDE NANOSTRUCTURES

2011 ◽  
Vol 10 (04n05) ◽  
pp. 761-764
Author(s):  
ANSHUMAN KUMAR ◽  
RAMESH R. NAVAN ◽  
AJAY KUSHWAHA ◽  
M. ASLAM ◽  
V. RAMGOPAL RAO
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Great Promise ◽  
Zno Nanostructures ◽  
Organic Thin Film ◽  
Zinc Oxide Nanostructures ◽  
Oxide Nanostructures ◽  
P Type

This paper reports the performance enhancement of nanocomposite thin film transistors fabricated using ZnO dispersed in p-type polymer, poly 3-hexylthiophene (P3HT). The ZnO nanostructures considered here are nanorods (300–500 nm), that were deposited in the high temperature zone during vapor phase deposition involving carbothermal reduction of solid zinc precursor. Organic Thin Film Transistors (OTFTs) based on the dispersion of these ZnO nanostructures in the p-type organic semiconductor, P3HT, show a mobility enhancement by 10 times for the organic–inorganic composite (~ 4 × 10-3 cm2/V s) compared to its pristine state (~ 4 × 10-4 cm2/V s). The results presented here show a great promise for the performance enhancement of p-type solution processable FETs.

Effect of Precursor Concentration in the Synthesization of ZnO Nanostructures by Solution-Immersion Method

2013 ◽  
Vol 667 ◽  
pp. 501-506 ◽  
Author(s):  
Azlinda Ab Aziz ◽  
Zuraida Khusaimi ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Room Temperature ◽  
Zinc Nitrate ◽  
Precursor Concentration ◽  
Zno Films ◽  
Nitrate Hexahydrate ◽  
Zno Nanostructures ◽  
Large Area ◽  
Immersion Method ◽  
X Ray ◽  
Area Deposition

The effect of precursor concentration ranging from 0.1 to 0.5 M using the mixture of zinc nitrate hexahydrate (Zn(NO3)2.6H2O) and urea (CH4N2O) at 60 oC evaluated in this study. ZnO nanostructures have been prepared by solution immersion method on gold-seeded silicon substrate (Si/Au). Solution immersion method was adopted with the intention to develop a large area deposition at low-temperature benign method of preparation. As concentration increase, the morphologies are seemingly changed from rod (~300 nm) to accumulated nanosheets that consist of many pores. The structural and optical effect of changing the precursor concentration on the synthesization of ZnO films were investigated by X-ray diffractometer (XRD) and room temperature photoluminescence (PL) measurement, respectively. A unique development of size and growth orientation is seemingly affected by the change of the precursor concentration.

Growth of ZnO Nanosturctures on Porous Silicon in Different Concentration of Zn2+ Ion

2013 ◽  
Vol 832 ◽  
pp. 691-694 ◽  
Author(s):  
Kevin Alvin Eswar ◽  
F.S. Husairi ◽  
Azlinda Ab Aziz ◽  
Mohamad Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Electrochemical Etching ◽  
Sol Gel ◽  
Zinc Nitrate ◽  
Ion Concentration ◽  
Wafer Surface ◽  
Zno Nanostructures ◽  
X Ray Diffraction ◽  
Immersion Method ◽  
Electron Microscopic ◽  
P Type

In this work, zinc nitrate was used as starting materials while hexamethylenetetramine as stabilizier and deionized water as a solvent. Electrochemical etching method was employed to modify p-type silicon wafer surface in substrate preparation. ZnO nanostructures were simply deposited on substrate by sol-gel immersion method. Different molarities of precursor were prepared to study the effect of Zn2+ ion concentration in growth of ZnO nanostructures. Field Emission Scanning Electron Microscopic (FESEM) revealed that concentration of Zn2+ ion precursor influences the growth of ZnO nanostructures. ZnO nanoflower was formed in low molarity and becomes nanospherical composed by nanorods in high molarity. X-Ray diffraction (XRD) spectroscopy was employed to analyse the structural properties. The result was confirming the formation of hexagonal wurtzite of ZnO nanostructures. Besides, the growth of ZnO nanostructures was aligned to (002) towards higher molarity.

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