scholarly journals 3D CFD Simulations of MOCVD Synthesis System of Titanium Dioxide Nanoparticles

2013 ◽  
Vol 2013 ◽  
pp. 1-11 ◽  
Author(s):  
Siti Hajar Othman ◽  
Suraya Abdul Rashid ◽  
Tinia Idaty Mohd Ghazi ◽  
Norhafizah Abdullah
Keyword(s):  
Fluid Dynamics ◽  
Titanium Dioxide ◽  
Cfd Simulation ◽  
Titanium Dioxide Nanoparticles ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Organic Chemical ◽  
Synthesis System ◽  
3 Dimensional ◽  
Simulation Results

This paper presents the 3-dimensional (3D) computational fluid dynamics (CFD) simulation study of metal organic chemical vapor deposition (MOCVD) producing photocatalytic titanium dioxide (TiO2) nanoparticles. It aims to provide better understanding of the MOCVD synthesis system especially of deposition process of TiO2nanoparticles as well as fluid dynamics inside the reactor. The simulated model predicts temperature, velocity, gas streamline, mass fraction of reactants and products, kinetic rate of reaction, and surface deposition rate profiles. It was found that temperature distribution, flow pattern, and thermophoretic force considerably affected the deposition behavior of TiO2nanoparticles. Good mixing of nitrogen (N2) carrier gas and oxygen (O2) feed gas is important to ensure uniform deposition and the quality of the nanoparticles produced. Simulation results are verified by experiment where possible due to limited available experimental data. Good agreement between experimental and simulation results supports the reliability of simulation work.

Surface Morphology of AlN Nucleation Layer Grown on Si by MOCVD

2015 ◽  
Vol 1120-1121 ◽  
pp. 391-395 ◽  
Author(s):  
Shu Fan ◽  
Le Yu ◽  
Xiao Long He ◽  
Ping Han ◽  
Cai Chuan Wu ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Growth Time ◽  
Organic Chemical ◽  
Nucleation Layer ◽  
Coverage Ratio ◽  
3 Dimensional ◽  
Aln Film ◽  
Metal Organic ◽  
Dimensional Growth ◽  
Organic Chemical Vapor Deposition

The AlN nucleation layer (NL) has been deposited on Si (111) substrate by metal-organic chemical vapor deposition (MOCVD). The result indicates that the growth mode of the AlN NL is in the form of 2-dimensional plane and 3-dimensional island. The proportion of 3-dimensional region increases gradually and the 2-dimensional region reduces correspondingly with the increase of growth time. The decrease of the coverage ratio of AlN grains in the 2-dimensional growth region is due to the effect of etching. AlN film with the single crystal orientation has been deposited on the optimized AlN NL.

Developing Monolithically Integrated CdTe Devices Deposited by AP-MOCVD

2013 ◽  
Vol 1538 ◽  
pp. 275-280
Author(s):  
S.L. Rugen-Hankey ◽  
V. Barrioz ◽  
A. J. Clayton ◽  
G. Kartopu ◽  
S.J.C. Irvine ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Aluminosilicate Glass ◽  
Organic Chemical ◽  
Large Area ◽  
Monolithically Integrated ◽  
Glass Substrates ◽  
Laser Scribing

ABSTRACTThin film deposition process and integrated scribing technologies are key to forming large area Cadmium Telluride (CdTe) modules. In this paper, baseline Cd1-xZnxS/CdTe solar cells were deposited by atmospheric-pressure metal organic chemical vapor deposition (AP-MOCVD) onto commercially available ITO coated boro-aluminosilicate glass substrates. Thermally evaporated gold contacts were compared with a screen printed stack of carbon/silver back contacts in order to move towards large area modules. P2 laser scribing parameters have been reported along with a comparison of mechanical and laser scribing process for the scribe lines, using a UV Nd:YAG laser at 355 nm and 532 nm fiber laser.

scholarly journals Fabrication of Self-Assembling AlGaN Quantum Dot on AlGaN Surfaces Using Anti-Surfactant

1999 ◽  
Vol 4 (S1) ◽  
pp. 852-857 ◽  
Author(s):  
H. Hirayama ◽  
Y. Aoyagi ◽  
S. Tanaka
Keyword(s):  
Chemical Vapor ◽  
Organic Chemical ◽  
3 Dimensional ◽  
Step Flow ◽  
Self Assembling ◽  
Metal Organic ◽  
Dot Density ◽  
20 Nm ◽  
Step Flow Growth ◽  
Organic Chemical Vapor Deposition

We report on the first artificial fabrication of self-assembling AlGaN quantum dots (QDs) on AlGaN surfaces using metal organic chemical vapor deposition (MOCVD). The AlGaN QDs are fabricated using a growth mode change from 2-dimensional step-flow growth to 3-dimensional island formation by modifying the AlGaN surface energy with Si anti-surfactant. The average lateral size and the thickness of fabricated AlGaN QDs, as determined by AFM, are approximately 20 nm and 6nm, respectively. The dot density was found to be controlled from 5×1010 cm−2 down to 2×109 cm−2 by increasing the dose of Si anti-surfactant. We obtained the photoluminescence (PL) from AlGaN QDs embedded with Al0.38Ga0.62N capping layers. The Al incorporation in AlGaN QDs was controllable within the range of 1-5 %.

Optimal Hardware Placement in a Minitower Computer Enclosure System

2011 ◽  
Author(s):  
M. Alfaro Cano ◽  
A. Hernandez-Guerrero ◽  
C. Rubio Arana ◽  
Aristotel Popescu
Keyword(s):  
Fluid Dynamics ◽  
Computational Fluid Dynamics ◽  
Cfd Simulation ◽  
Operating Temperature ◽  
Optimal Placement ◽  
Cfd Analysis ◽  
Computational Fluid Dynamics Cfd ◽  
Simulation Results ◽  
The Relationship ◽  
Key Questions

One of the requirements for existing personal computers, PCs, is that the hardware inside must maintain an operating temperature as low as possible. One way to achieve that is to place the hardware components at locations with enough airflow around it. However, the relationship between the airflow and temperature of the components is unknown before they are placed at specific locations inside a PC. In this work a Computational Fluid Dynamics (CFD) analysis is coupled to a Design of Experiment (DOE) methodology to answer typical minitower key questions: a) how do the possible positions of hardware components affect their temperature?, and b) is it possible to get an optimal placement for these hardware components using the data collected by the CFD simulation results? The DOE methodology is used to optimize the analysis for a very large number of possible configurations. The results help in identifying where the efforts need to be placed in order to optimize the positioning of the hardware components for similar configurations at the designing stage. Somehow the results show that general conclusions could be drawn, but that there are not specific rules that could be applied to every configuration.

Quality-enhanced GaN epitaxial films on Si(111) substrates by in situ deposition of SiN on a three-dimensional GaN template

RSC Advances ◽  
2016 ◽  
Vol 6 (88) ◽  
pp. 84794-84800 ◽  
Author(s):  
Yunhao Lin ◽  
Meijuan Yang ◽  
Wenliang Wang ◽  
Zhiting Lin ◽  
Guoqiang Li
Keyword(s):  
Vapor Deposition ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Organic Chemical ◽  
3 Dimensional ◽  
In Situ Deposition ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

High-quality crack-free GaN epitaxial films were successfully grown on Si(111) substrates using metal–organic chemical vapor deposition by in situ depositing SiN on a 3-dimensional (3D) GaN template.

Design and fabrication of carbon fiber/carbonyl iron core–shell structure composites as high-performance microwave absorbers

RSC Advances ◽  
2015 ◽  
Vol 5 (12) ◽  
pp. 8713-8720 ◽  
Author(s):  
Liu Yuan ◽  
Liu Xiangxuan ◽  
Li Rong ◽  
Wen Wu ◽  
Wang Xuanjun
Keyword(s):  
Carbon Fiber ◽  
Shell Structure ◽  
Carbonyl Iron ◽  
High Performance ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Organic Chemical ◽  
Iron Core ◽  
Core Shell ◽  
Core Shell Structure

Carbon fiber/carbonyl iron core–shell structure composites with excellent microwave absorbing performance were prepared by a metal organic chemical vapor deposition process.

The Simulation of Polycrystalline Silicon Thin Film Deposition in PECVD System

2011 ◽  
Vol 189-193 ◽  
pp. 2032-2036 ◽  
Author(s):  
Zhi Jian Wang ◽  
Xiao Feng Shang
Keyword(s):  
Thin Film ◽  
Deposition Rate ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Main Reaction ◽  
Silicon Thin Film ◽  
Simulation Results

Taking Silicon tetrachloride (SiCl4) and hydrogen (H2) as the reaction gas, by the method of plasma-enhanced chemical vapor deposition (PECVD), this paper simulates the deposition process of polycrystalline silicon thin film on the glass substrates in the software FLUENT. Three dimensional physical model and mathematics model of the simulated area are established. The reaction mechanism including main reaction equation and several side equations is given during the simulation process. The simulation results predict the velocity field, temperature distribution, and concentration profiles in the PECVD reactor. The simulation results show that the deposition rate of silicon distribution is even along the circumference direction, and gradually reduced along the radius direction. The deposition rate is about 0.005kg/(m2•s) at the center. The simulated result is basically consistent with the practical one. It means that numerical simulation method to predict deposition process is feasible and the results are reliable in PECVD system.

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