scholarly journals Fabrication and Evaluation of Large Area Mo/Si Soft X-Ray Multilayer Mirrors at Indus SR Facilities

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
P. N. Rao ◽  
Maheswar Nayak ◽  
G. S. Lodha ◽  
S. K. Rai ◽  
A. K. Srivastava ◽  
...  
Keyword(s):  
Film Growth ◽  
Incident Angle ◽  
Interface Roughness ◽  
Thin Film Growth ◽  
Large Area ◽  
Interface Quality ◽  
Sputtering Deposition ◽  
X Ray ◽  
Transmission Electron ◽  
Film Roughness

Large area Mo/Si multilayer (ML) mirrors with high reflectivity are fabricated using magnetron sputtering deposition system. Thin film growth is optimized for film roughness, density, and interface quality by changing process parameters through fabrication of thin films. Mo/Si MLs are fabricated with varying thickness ratio, number of layer pairs, and periodicity from 0.3 to 0.45, 5 to 65, and 40 to 100 Å, respectively. The samples are characterized using hard X-ray reflectivity and transmission electron microscopy. Soft X-ray performance tests of MLs are done by soft X-ray reflectivity using Indus-1 synchrotron radiation. ML coating with thickness errors of ~0.03% per layer and interface roughness in the range of 2 to 5 Å has been realized. The lateral variation of the periodicity is controlled within 0.5 Å over the  mm2 area of the plane substrate by using substrate motion and appropriate masking arrangement. Maximum variation of periodicity from run to run is less than 0.5 Å. Peak reflectivity of ~63% at wavelength of ~127 Å is achieved for incident angle of 71 degree.

scholarly journals Non-Destructive Characterization of Porous Silicon Using X-Ray Reflectivity

1994 ◽  
Vol 358 ◽  
Author(s):  
E. Chason ◽  
T.R. Guilinger ◽  
M.J. Kelly ◽  
T.J. Headley ◽  
A.J. Howard
Keyword(s):  
Porous Silicon ◽  
Film Growth ◽  
Interface Roughness ◽  
Electrochemical Anodization ◽  
Cross Sectional ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Constant Rate

ABSTRACTUnderstanding the evolution of porous silicon (PS) layers at the early stages of growth is important for determining the mechanism of PS film growth and controlling the film properties. We have used X-ray reflectivity (XRR) to determine the evolution of layer thickness and interfacial roughness during the growth of thin PS layers (< 200 nm) prepared by electrochemical anodization. The porous layer grows at a constant rate for films as thin as 15 nm indicating a very short incubation period during which the surface may be electropolished before the PS structure begins to form. Interface roughness measurements indicate that the top surface of the film remains relatively smooth during growth while the roughness of the PS/silicon interface increases only slightly with film thickness. The XRR results are compared with results obtained from the same films by cross-sectional transmission electron microscopy (XTEM), atomic force microscopy (AFM) and gravimetry.

The annealed (0001) α-alumina surface and its influence on thin-film growth

1995 ◽  
Vol 53 ◽  
pp. 336-337
Author(s):  
Michael W. Bench ◽  
Paul G. Kotula ◽  
C. Barry Carter
Keyword(s):  
Electron Microscopy ◽  
Surface Energy ◽  
Film Growth ◽  
Thin Film Growth ◽  
Energy Calculations ◽  
Transmission Electron ◽  
Reflection Electron Microscopy ◽  
Low Energy Electron ◽  
Surface Nature

The growth of semiconductors, superconductors, metals, and other insulators has been investigated using alumina substrates in a variety of orientations. The surface state of the alumina (for example surface reconstruction and step nature) can be expected to affect the growth nature and quality of the epilayers. As such, the surface nature has been studied using a number of techniques including low energy electron diffraction (LEED), reflection electron microscopy (REM), transmission electron microscopy (TEM), molecular dynamics computer simulations, and also by theoretical surface energy calculations. In the (0001) orientation, the bulk alumina lattice can be thought of as a layered structure with A1-A1-O stacking. This gives three possible terminations of the bulk alumina lattice, with theoretical surface energy calculations suggesting that termination should occur between the Al layers. Thus, the lattice often has been described as being made up of layers of (Al-O-Al) unit stacking sequences. There is a 180° rotation in the surface symmetry of successive layers and a total of six layers are required to form the alumina unit cell.

Combinatorial (Ba,Sr)TiO3 thin film growth: X-ray diffraction and Raman spectroscopy

2009 ◽  
Vol 106 (3) ◽  
pp. 034108 ◽  
Author(s):  
H. Bouyanfif ◽  
J. Wolfman ◽  
M. El Marssi ◽  
Y. Yuzyuk ◽  
R. Bodeux ◽  
...  
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Film Growth ◽  
Thin Film Growth ◽  
Tio3 Thin Film ◽  
X Ray Diffraction ◽  
X Ray

Soft x-ray spectrometer for in situ monitoring of thin-film growth

1994 ◽  
Author(s):  
Per Skytt ◽  
Carl J. Englund ◽  
Nial Wassdahl ◽  
Derrick C. Mancini ◽  
Joseph Nordgren
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
In Situ Monitoring ◽  
X Ray

X-ray diffraction analysis of YBaCuO ultra-thin film growth

1997 ◽  
Vol 251 (1-2) ◽  
pp. 65-69 ◽  
Author(s):  
G. Linker ◽  
D. Hüttner ◽  
O. Meyer ◽  
M. Ohkubo ◽  
J. Reiner
Keyword(s):  
Thin Film ◽  
Diffraction Analysis ◽  
Film Growth ◽  
Thin Film Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ultra Thin Film

Investigation of Thin Film Growth of B12As2 by Chemical Vapor Deposition

2003 ◽  
Vol 764 ◽  
Author(s):  
R. Nagarajan ◽  
J.H. Edgar ◽  
J. Pomeroy ◽  
M. Kuball ◽  
T. Aselage
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Thin Film Growth ◽  
X Ray Diffraction ◽  
Flow Rates ◽  
X Ray ◽  
Effects Of Temperature ◽  
Reactant Flow

AbstractThe chemical vapor deposition of icosahedral boron arsenide, B12As2, on 6H-SiC (0001) (on and off-axis) substrates was studied using hydrides as the reactants. The effects of temperature and reactant flow rates on the phases deposited and the crystal quality were determined. The growth rate increased with temperature from 1.5μm/h at 1100°C to 5 μm/h at 1400°C and decreased thereafter. X-ray diffraction revealed that the deposits were amorphous when the deposition temperature is below 1150° C. Above 1150°C, smooth B12As2 films were formed on 6H-SiC substrates with an orientation of (0001) B12As2 parallel to 6H-SiC (0001). Raman spectroscopy confirmed the strongly c-axis oriented nature of B12As2 film on 6H-SiC.

Structural Studies of Sputtered Ni80Co20/Cu Multilayers

1995 ◽  
Vol 382 ◽  
Author(s):  
X. Bian ◽  
Z. Altounian ◽  
J. O. Ström-Olsen ◽  
M. Sutton ◽  
R. W. Cochrane
Keyword(s):  
Optical Model ◽  
Film Growth ◽  
Growth Direction ◽  
Interface Roughness ◽  
High Angle ◽  
X Ray ◽  
Compositional Modulation ◽  
Large Expansion ◽  
Reflectivity Data ◽  
Coherent Interfaces

ABSTRACTThe structure of magnetron-sputtered Ni80Co20/Cu multilayershas been investigated by low and high-angle X-ray diffractometry. Low-angle x-ray reflectivity data reveal well-defined compositional modulation along the film growth direction for a wide Cii thickness range of 5-40 Å. The data analysis, based on anl optical model, shows that interfacial mixing is limited to ∼3-4 Å As the number of bilayers increased from 8 to 100, the interface roughness increased by a factor of 3. Better layered structures were found for relatively thick Cu layers (tCu>10Å). The high-angle diffraction data were analyzed using a trapezoidal model. The results indicate that the films have a polycrystalline structure with a preferred (111)orientation with coherent interfaces of ∼ 100-240 Ådepending on the Cu layer thickness. The relatively large expansion of (111) spacings in NiCo alloy layers gives rise to the lower atomic ordering in NiCo/Cu multilayers.

In-Situ Synchrotron X-Ray Scattering Study of Thin Film Growth by Atomic Layer Deposition

2011 ◽  
Vol 11 (2) ◽  
pp. 1577-1580 ◽  
Author(s):  
Yong Jun Park ◽  
Dong Ryeol Lee ◽  
Hyun Hwi Lee ◽  
Han-Bo-Ram Lee ◽  
Hyungjun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
X Ray ◽  
X Ray Scattering ◽  
Layer Deposition ◽  
Scattering Study
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