scholarly journals Impedance Spectroscopic Study of p-i-n Type a-Si Solar Cell by Doping Variation of p-Type Layer

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Sunhwa Lee ◽  
Seungman Park ◽  
Jinjoo Park ◽  
Youngkuk Kim ◽  
Hyeongsik Park ◽  
...  
Keyword(s):  
Solar Cell ◽  
Spectroscopic Study ◽  
Type A ◽  
Si Solar Cell ◽  
Type Layer ◽  
P Type

High-Quality Amorphous Silicon Carbide Prepared by a New Fabrication Method for a Window P-Layer of Solar Cells

1992 ◽  
Vol 242 ◽  
Author(s):  
K. Ninomiya ◽  
H. Haku ◽  
H. Tarui ◽  
N. Nakamura ◽  
M. Tanaka ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Type A ◽  
Wide Bandgap ◽  
Dilution Method ◽  
High Quality ◽  
Bond Density ◽  
Si Solar Cell ◽  
P Type

ABSTRACTA total area conversion efficiency of 11.1% has been achieved for a 1Ocm×1Ocm integrated-type single-junction a-Si solar cell submodule using a high-quality wide-bandgap p-layer doped with B(CH3)3 and other advanced techniques. This is the highest conversion efficiency ever reported for an a-Si solar cell with an area of 100cm2. As for a multi-junction solar cell, 12.1% was obtained for a 1cm2 cell with a high-quality wide-bandgap a-Si i-layer. The layer was fabricated by a hydrogen dilution method at a low substrate temperature for a front active layer of an a-Si/a-Si/a-SiGe stacked solar cell.For further improvement in conversion efficiency, a wider-bandgap a-SiC was developed using a novel plasma CVD method, called the CPM (Controlled Plasma Magnetron) method. From XPS and IR measurements, the resultant films were found to have high Si-C bond density and low Si-H bond density, p-type a-SiC was fabricated using the post-doping technique, and dark conductivity more than 10-5(Q. cm)-1 was obtained (Eopt3 ≥ 2eV; Eopt2 2.2eV), whereas that of conventional p-type a-SiC is less than 10-6(Ω·cm)-1. These properties are very promising for application to the p-layers of advanced a-Si solar cells.

Stability of Amorphous Silicon Solar Cells — New Tandem a-SiC/a-Si Solar Cell

1986 ◽  
Vol 70 ◽  
Author(s):  
Y. Tawada ◽  
J. Takada ◽  
M. Yamaguchi ◽  
H. Yamagishi ◽  
Y. Hosokawa ◽  
...  
Keyword(s):  
Solar Cell ◽  
Light Exposure ◽  
Type A ◽  
Metal Electrode ◽  
Back Side ◽  
Blocking Layer ◽  
Exposure Test ◽  
Si Solar Cell ◽  
Instability Modes ◽  
P Type

ABSTRACTBasic technologies for solving problems in thermal and light-induced degradation have been developed. The tandem type a-SiC/a-Si solar cell with blocking layers exhibits excellent stability for both thermal and sun light conditions. An observable light-induced degradation is not seen in the cell performance after light exposure test of 2000 hours. Two instability modes, that is, thermal and light-induced degradation have been investigated. For thermal degradation, a blocking layer for preventing diffusion has been inserted between the back side metal electrode and a n-layer and another blocking layer has been introduced between the np tunnel junction. To prevent light-induced degradation, p-type a-SiC layer of the pin structure on the side of a glass substrate/SnO2 has been deposited at the temperature of 70°C. The highest efficiency is 9.0% at the present stage, but it is expected to be improved to more than 10%.

Through-Hole Contact (THC) integrated-type a-Si solar cell submodule by a new laser photo-etching method

1993 ◽  
Vol 31 (2) ◽  
pp. 97-108 ◽  
Author(s):  
H NISHIWAKI ◽  
S SAKAI ◽  
S MATSUMI ◽  
S TSUDA ◽  
S KIYAMA ◽  
...  
Keyword(s):  
Solar Cell ◽  
Type A ◽  
Si Solar Cell ◽  
Etching Method ◽  
Through Hole

EXCIMER LASER-INDUCED PATTERNING FOR THE METAL ELECTRODE OF INTEGRATED-TYPE A-SI SOLAR CELL SUBMODULES

1990 ◽  
pp. 192-196
Author(s):  
S. Kiyama ◽  
Y. Hirono ◽  
T. Matsuoka ◽  
M. Ohnishi ◽  
S. Nakano ◽  
...  
Keyword(s):  
Solar Cell ◽  
Excimer Laser ◽  
Type A ◽  
Metal Electrode ◽  
Si Solar Cell

Photoelectrical and Photovoltaic Peroperties of n-ZnO/p-Si Heterojunction

2011 ◽  
Vol 399-401 ◽  
pp. 1477-1480
Author(s):  
Yan Li Xu ◽  
Jin Hua Li
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Ion Beam ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Textured Surface ◽  
Si Solar Cell ◽  
The One ◽  
P Type

n-ZnO thin films doped In with 2 atm.% were deposited on p-type silicon wafer with textured surface by Ion Beam Enhanced Deposition method, after annealing and prepared front and back electrodes, the n-ZnO/p-Si heterojunction samples were fabricated. The photoelectric property of the sample were measured and compared with silicon solar cell. The result indicated the saturated photocurrent of n-ZnO/p-Si heterojunction was 20% greater than one of the Si solar cell. It means the ZnO/Si heterojunction has a higher ability of produce photoelectron then one of silicon solarcell. The result of the photovoltaic test of n-ZnO/p-Si heterojunction show The open circuit voltage and short-circuit current of the n-ZnO/p-Si heterojunction was 400mV and 5.5mA/cm2 respectively. It was much smaller than the one of silicon solar cells. The reason was discussed

scholarly journals p-Type a-Si:H Doping Using Plasma Immersion Ion Implantation for Silicon Heterojunction Solar Cell Application

Solar RRL ◽  
2017 ◽  
Vol 1 (2) ◽  
pp. 1600007 ◽  
Author(s):  
Tristan Carrere ◽  
Delfina Muñoz ◽  
Marianne Coig ◽  
Christophe Longeaud ◽  
Jean-Paul Kleider
Keyword(s):  
Solar Cell ◽  
Ion Implantation ◽  
Type A ◽  
Heterojunction Solar Cell ◽  
Solar Cell Application ◽  
Silicon Heterojunction Solar Cell ◽  
Plasma Immersion Ion Implantation ◽  
P Type

Critical Electric Field of InGaN p-i-n Solar Cell

2013 ◽  
Vol 284-287 ◽  
pp. 1168-1172
Author(s):  
Der Yuh Lin ◽  
Chao Yu Chi
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Field Strength ◽  
Electric Field ◽  
Electric Field Strength ◽  
High Efficiency ◽  
Physical Models ◽  
Electric Field Effect ◽  
Type Layer ◽  
P Type

We present a study of electric field effect on the efficiency of GaN/In0.1Ga0.9N p-i-n solar cells by using the advanced physical models of semiconductor devices (APSYS) simulation program. In this study, the electric field strength and other parameters such as optimum thickness of p-type layer and efficiency of GaN/In0.1Ga0.9N p-i-n solar cells with different i-layer thicknesses have been performed. On the basis of simulating results, for a high efficiency solar cell, it is found that the optimum p-type layer concentration is above 4×1016cm-3and the suitable thickness is between 0.1 to 0.2 μm. For different i-layer thickness and p-doping concentrations, a critical electric field (Fc) has been found at 100 kV/cm. It is worth to note that when the electric field strength of i-layer below Fc value, the solar cell efficiency will dramatically decrease. Thus Fc can be seen as an index for acquiring the quality of solar device.

THROUGH-HOLE CONTACT (THC) INTEGRATED-TYPE A-SI SOLAR CELL SUBMODULES

1990 ◽  
pp. 157-161
Author(s):  
M. Ohnishi ◽  
H. Shibuya ◽  
N. Okuda ◽  
Y. Kishi ◽  
K. Wakisaka ◽  
...  
Keyword(s):  
Solar Cell ◽  
Type A ◽  
Si Solar Cell ◽  
Through Hole

Preparation of High-Quality poly-Si and μc-Si Films by the SPC Method

1989 ◽  
Vol 164 ◽  
Author(s):  
T. Matsuyama ◽  
M. Nishikuni ◽  
M. Kameda ◽  
S. Okamoto ◽  
M. Tanaka ◽  
...  
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Solid Phase ◽  
Wavelength Region ◽  
Optical Transmittance ◽  
High Quality ◽  
Long Wavelength ◽  
Si Solar Cell ◽  
Si Films ◽  
P Type

AbstractWe have achieved the highest total area conversion efficiency for an integrated type 10cm × 10cm a-Si solar cell at 10.2%. This value is the world record for a 10cm × 10cm a-Si solar cell. For further improvement of conversion efficiency in a-Si solar cells, it is necessary to develop materials with high-photosensitivity in the long wavelength region and materials with high conductivity. We have developed a Solid Phase Crystallization (SPC) method of growing a Si crystal at temperatures as low as 600°C. Using this method, thin-film polycrystalline silicon (poly-Si) with higP-photosensitivity in the long wavelength region and Hall mobility of 70cm2/V sec was obtained and quantum efficiency in the range of 800,∼ lO00nm was achieved up to 80% in the n-type poly-Si with grain size of about 2μm. We also succeeded in preparing a device-quality p-type microcrystalline silicon (μc-Si) using the SPC method at 620°C for 3 hours from the conventional plasma-CVD p-type amorphous silicon (a-5i) withoul using any post-doping process. Obtained properties of μd=2 × 103 (.cm) and a high optical transmittance in the 2.0 ∼ 3.0 eV range are better as a window material than the conventional p-type μc-Si:H. Therefore, it was concluded that the SPC method is better as a new technique to prepare high-quality solar cell materials.

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