scholarly journals Solvation-Assisted Young’s Modulus Control of Single-Crystal Fullerene Nanowhiskers

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Tokushi Kizuka ◽  
Kun'ichi Miyazawa ◽  
Takayuki Tokumine

Single-crystal nanowhiskers (NWs) composed of fullerene C70molecules were synthesized by the liquid-liquid interfacial precipitation method that usedm-xylene as a saturated solution of C70molecules. Bending behavior of the individual NWs was observed byin situtransmission electron microscopy equipped with nanonewton force measurements using an optical deflection method. The Young’s modulus of the NWs was estimated to be 0.3–1.9 GPa, which was 2–7% of the moduli of fullerene NWs with similar diameters synthesized using other solvents, that is, toluene and pyridine. The influence of the solvent used in the precipitation method on Young’s modulus is discussed.

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Tokushi Kizuka ◽  
Kun'ichi Miyazawa ◽  
Takayuki Tokumine

We performed bending tests on single-crystal nanotubes composed of fullerene C70molecules byin situtransmission electron microscopy with measurements of loading forces by an optical deflection method. The nanotubes with the outer diameters of 270–470 nm were bent using simple-beam and cantilever-beam loading by the piezomanipulation of silicon nanotips. Young's modulus of the nanotubes increased from 61 GPa to 110 GPa as the outer diameter decreased from 470 nm to 270 nm. Young's modulus was estimated to be 66% of that of single-crystal C60nanotubes of the same outer diameter.


Nano Letters ◽  
2019 ◽  
Vol 19 (3) ◽  
pp. 2084-2091 ◽  
Author(s):  
Konstantin L. Firestein ◽  
Dmitry G. Kvashnin ◽  
Joseph F.S. Fernando ◽  
Chao Zhang ◽  
Dumindu P. Siriwardena ◽  
...  

1990 ◽  
Vol 198 ◽  
Author(s):  
Hyeongtag Jeon ◽  
J. W. Honeycutt ◽  
C. A. Sukow ◽  
T. P. Humphreys ◽  
R. J. Nemanich ◽  
...  

ABSTRACTEpitaxial TiSi2 films have been grown by molecular beam epitaxy (MBE) on atomically clean Si(111)-orientated substrates. The growth procedure involves the ambient temperature deposition of Ti films of 50Å thickness and annealing to 800°C. In situ low energy electron diffraction (LEED) and Auger electron spectroscopy (AES) techniques have been used to monitor the TiSi2 formation process. The epitaxial films have been identified as the C49 metastable phase by both Raman spectroscopy and electron diffraction. Plan view transmission electron microscopy shows three different connected island morphologies. The individual island structures are single crystal and are grown epitaxially with different crystallographic orientations. The orientational relationship of the largest islands is given by [3 1 1] C49 TiSi2//[112]Si and (130) C49 TiSi2//(l1 1)Si. High resolution transmission electron microscopy (HRTEM) cross-section shows a coherent interface extending over several hundred angstroms.


2005 ◽  
Vol 108-109 ◽  
pp. 145-150 ◽  
Author(s):  
P.D. Edmondson ◽  
S.E. Donnelly ◽  
R.C. Birtcher

In this paper we present a detailed study in which the formation, by heavy ion impact, and thermal recrystallisation of individual amorphous zones have been studied using in-situ transmission electron microscopy. In agreement with previous work, we observe a reduction in the total volume of amorphous material contained within the amorphous zones following thermal annealing over a wide range of temperatures. When the evolution of the individual amorphous zones is followed, those with similar starting sizes are observed to recrystallise over a range of temperatures from 70 °C to 500 °C. The temperature at which an amorphous zone fully recrystallises does not appear to be correlated with initial size. In addition, zones are occasionally observed to increase in size temporarily on some isochronal annealing steps. Furthermore, observations during a ramp anneal show that many zones recrystallise in a stepwise manner separated by periods of stability. These phenomenon are discussed in terms of the I-V pair.


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