scholarly journals High-Efficiency 6′′ Multicrystalline Black Solar Cells Based on Metal-Nanoparticle-Assisted Chemical Etching

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
W. Chuck Hsu ◽  
Yen-Sheng Lu ◽  
Jung-Yi Chyan ◽  
J. Andrew Yeh
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Power ◽  
Power Efficiency ◽  
High Efficiency ◽  
Surface Passivation ◽  
Surface Texturing ◽  
Minority Carrier Lifetime ◽  
Metal Nanoparticle ◽  
High Power Efficiency

Multicrystalline silicon (mc-Si) photovoltaic (PV) solar cells with nanoscale surface texturing by metal-nanoparticle-assisted etching are proposed to achieve high power efficiency. The investigation of average nanorod lengths from 100 nm to 1 μm reveals that the Si wafer decorated with 100 nm thick nanorods has optical reflection of 9.5% inferior than the one with 1 μm thick nanorods (2%). However, the short nanorods improve the doping uniformity and effectively decrease metal contact resistance. After surface passivation using the hydrogenated SiO2/SiNx(5 nm/50 nm) stack, the minority carrier lifetime substantially increases from 1.8 to 7.2 μs for the 100 nm-thick nanorod solar cell to achieve the high power efficiency of 16.38%, compared with 1 μm thick nanorod solar cell with 11.87%.

Relationship Between Minority Carrier Parameters and Solar Cell Characteristics of Electromagnetic Cast Polycrystalline Silicon

1993 ◽  
Vol 324 ◽  
Author(s):  
Eiichi Suzuki ◽  
Kyojiro Kaneko ◽  
Toru Nunoi
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Polycrystalline Silicon ◽  
High Efficiency ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Small Variation ◽  
Minority Carrier Lifetime ◽  
The Relationship ◽  
And Diffusion

AbstractThe relationship between minority carrier properties and solar cell characteristics of electromagnetic (EM) cast polycrystalline Si has experimentally been investigated. The minority carrier lifetime τ and diffusion coefficient D were evaluated by a novel dual mercury probe method. The solar cell characteristics, e.g., a conversion efficiency η were measured by fabricating experimental solar cells using the corresponding wafers. The wafer showing high-η (13.1%) has relatively high τ (av. 8.2 μs) with small variation of I) (av. 29.6 cm2/s). On the contrary, the low-η (11%) wafer shows low τ (av. 1.1 μs), including some inferior portions with very low τ of less than 0.5 μs. It is also shown that D drastically deteriorates with decreasing τ if τ is less than around 2 μs. To realize high efficiency polycrystalline solar cells, the wafers with high value of τ and without considerably low-τ portions are needed.

scholarly journals Etch Characteristics and Morphology of Al2O3/TiO2 Stacks for Silicon Surface Passivation

2019 ◽  
Vol 11 (14) ◽  
pp. 3857 ◽  
Author(s):  
Dongchul Suh
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Surface Passivation ◽  
Surface Texturing ◽  
Surface Recombination ◽  
Open Circuit ◽  
High Rate ◽  
Tio2 Films ◽  
Etch Pits ◽  
The Impact

Chemical processes are very important for the development of high-efficiency crystalline solar cells, mainly for surface texturing to improve light absorption and cleaning processes to reduce surface recombination. Recently, research has been focusing on the impact of chemical polishing on the performance of a passivated emitter and rear cells (PERC), with particular emphasis on the dielectric passivation layers on the front side. This study examined the influence of etching on the passivation of Al2O3/TiO2 stacks, where the films may each be deposited using a range of deposition and post-annealing parameters. Most TiO2 films deposited at 300 °C were resistant to chemical etching, and higher temperature deposition and annealing produced more chemical-resistant films. TiO2 films deposited at 100 °C were etched slightly by SC1 and SC2 solutions at room temperature, whereas they were etched at a relatively high rate in an HF solution, even when capped with a thick TiO2 layer (up to 50 nm in thickness); blistering occurred in 20-nm-thick Al2O3 films. In contrast to the as-deposited films, the annealed films showed a lower level of passivation as 1% HF etching proceeded. The implied open circuit voltage of the samples annealed at 300 °C after HF etching decreased more than those annealed at 400 °C. The dark area in the photoluminescence images was not resistant to the HF solution and showed more etch pits. The etching strategies developed in this study are expected to help setup integration processes and increase the applicability of this stack to solar cells.

scholarly journals Simulated Study and Surface Passivation of Lithium Fluoride-Based Electron Contact for High-Efficiency Silicon Heterojunction Solar Cells

2021 ◽  
Author(s):  
Muhammad Quddammah Khokhar ◽  
Shahzad Qamar Hussain ◽  
Sanchari Chowdhury ◽  
Muhammad Aleem Zahid ◽  
Pham Duy Phong ◽  
...  
Keyword(s):  
Solar Cells ◽  
Lithium Fluoride ◽  
High Efficiency ◽  
Surface Passivation ◽  
Minority Carrier Lifetime ◽  
Open Circuit ◽  
Passivation Layer ◽  
Heterojunction Solar Cells ◽  
Electron Extraction ◽  
Silicon Heterojunction Solar Cells

Abstract Numerical simulation and experimental techniques were used to investigate lithium fluoride (LiFx) films as an electron extraction layer for the application of silicon heterojunction (SHJ) solar cells, with a focus on the paths toward excellent surface passivation and superior efficiency. The presence of a 7 nm thick hydrogenated intrinsic amorphous silicon (a-Si:H(i)) passivation layer along with thermally evaporated 4 nm thick LiFx resulted in outstanding passivation properties and suppresses the recombination of carriers. As a result, minority carrier lifetime (τeff) as well as implied open-circuit voltage (iVoc) reached up 933 μs and iVoc of 734 mV, accordingly at 120°C annealing temperature. A detailed simulated study was performed for the complete LiFx based SHJ solar cells to achieve superior efficiency. Optimized performance of SHJ solar cells using a LiFx layer thickness of 4 nm with energy bandgap (Eg) of 10.9 eV and the work function of 3.9 eV was shown as: Voc=745.7 mV, Jsc=38.21 mA/cm2, FF=82.17%, and =23.41%. Generally, our work offers an improved understanding of the passivation layer, electron extraction layer, and their combined effects on SHJ solar cells via simulation.

Comparative analysis of burn-in photo-degradation in non-fullerene COi8DFIC acceptor based high-efficiency ternary organic solar cells

2019 ◽  
Vol 3 (6) ◽  
pp. 1085-1096 ◽  
Author(s):  
Leiping Duan ◽  
Xianyi Meng ◽  
Yu Zhang ◽  
Haimang Yi ◽  
Ke Jin ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Comparative Analysis ◽  
High Power ◽  
Organic Solar Cells ◽  
Organic Solar Cell ◽  
High Efficiency ◽  
Power Conversion ◽  
High Power Conversion Efficiency ◽  
Photo Degradation

The ternary organic solar cell is a promising technology towards high power conversion efficiency.

Cu3Se2 nanostructure as a counter electrode for high efficiency quantum dot-sensitized solar cells

2016 ◽  
Vol 4 (34) ◽  
pp. 8020-8026 ◽  
Author(s):  
Shixun Wang ◽  
Ting Shen ◽  
Huiwen Bai ◽  
Bo Li ◽  
Jianjun Tian
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Quantum Dot ◽  
Power Conversion Efficiency ◽  
High Power ◽  
Counter Electrode ◽  
High Efficiency ◽  
Power Conversion ◽  
High Power Conversion Efficiency ◽  
Sensitized Solar Cells

Quantum dot sensitized solar cell assembled with a nanostructured Cu3Se2 counter electrode exhibits a high power conversion efficiency of 5.05%.

Design Technique of High Power Efficiency LLC DC-DC Converters for Photovoltaic Cells

2018 ◽  
Vol 2 (1) ◽  
pp. 30
Author(s):  
Hisatsugu Kato ◽  
Yoichi Ishizuka ◽  
Kohei Ueda ◽  
Shotaro Karasuyama ◽  
Atsushi Ogasahara
Keyword(s):  
High Power ◽  
Power Efficiency ◽  
Photovoltaic Cells ◽  
Input Voltage ◽  
Design Technique ◽  
Load Range ◽  
Voltage Range ◽  
Simulation Results ◽  
Secondary Side ◽  
High Power Efficiency

This paper proposes a design technique of high power efficiency LLC DC-DC Converters for Photovoltaic Cells. The secondary side circuit and transformer fabrication of proposed circuit are optimized for overcoming the disadvantage of limited input voltage range and, realizing high power efficiency over a wide load range of LLC DC-DC converters. The optimized technique is described with theoretically and with simulation results. Some experimental results have been obtained with the prototype circuit designed for the 80 - 400 V input voltage range. The maximum power efficiency is 98 %.

scholarly journals Design of Grating Al2O3 Passivation Structure Optimized for High-Efficiency Cu(In,Ga)Se2 Solar Cells

Sensors ◽  
2021 ◽  
Vol 21 (14) ◽  
pp. 4849
Author(s):  
Chan Hyeon Park ◽  
Jun Yong Kim ◽  
Shi-Joon Sung ◽  
Dae-Hwan Kim ◽  
Yun Seon Do
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Surface Passivation ◽  
Rear Surface ◽  
Maximum Efficiency ◽  
Structural Factors ◽  
Carrier Recombination ◽  
Cigs Solar Cells ◽  
Effective Carrier ◽  
Opening Width

In this paper, we propose an optimized structure of thin Cu(In,Ga)Se2 (CIGS) solar cells with a grating aluminum oxide (Al2O3) passivation layer (GAPL) providing nano-sized contact openings in order to improve power conversion efficiency using optoelectrical simulations. Al2O3 is used as a rear surface passivation material to reduce carrier recombination and improve reflectivity at a rear surface for high efficiency in thin CIGS solar cells. To realize high efficiency for thin CIGS solar cells, the optimized structure was designed by manipulating two structural factors: the contact opening width (COW) and the pitch of the GAPL. Compared with an unpassivated thin CIGS solar cell, the efficiency was improved up to 20.38% when the pitch of the GAPL was 7.5–12.5 μm. Furthermore, the efficiency was improved as the COW of the GAPL was decreased. The maximum efficiency value occurred when the COW was 100 nm because of the effective carrier recombination inhibition and high reflectivity of the Al2O3 insulator passivation with local contacts. These results indicate that the designed structure has optimized structural points for high-efficiency thin CIGS solar cells. Therefore, the photovoltaic (PV) generator and sensor designers can achieve the higher performance of photosensitive thin CIGS solar cells by considering these results.

scholarly journals Numerical Simulation Analysis of Ag Crystallite Effects on Interface of Front Metal and Silicon in the PERC Solar Cell

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 592
Author(s):  
Myeong Sang Jeong ◽  
Yonghwan Lee ◽  
Ka-Hyun Kim ◽  
Sungjin Choi ◽  
Min Gu Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Surface Recombination ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Metal Interface ◽  
Ag Crystallites ◽  
Recombination Velocity

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.

scholarly journals Cell/Module Integration Technology with Wire-Embedded EVA Sheet

2021 ◽  
Vol 11 (9) ◽  
pp. 4170
Author(s):  
Jeong Eun Park ◽  
Won Seok Choi ◽  
Donggun Lim
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Power ◽  
Short Circuit ◽  
Optical Loss ◽  
Manufacturing Cost ◽  
Power Module ◽  
Manufacturing Method ◽  
Front Electrode ◽  
The Wire

Silicon wafers are crucial for determining the price of solar cell modules. To reduce the manufacturing cost of photovoltaic devices, the thicknesses of wafers are reduced. However, the conventional module manufacturing method using the tabbing process has a disadvantage in that the cell is damaged because of the high temperature and pressure of the soldering process, which is complicated, thus increasing the process cost. Consequently, when the wafer is thinned, the breakage rate increases during the module process, resulting in a lower yield; further, the module performance decreases owing to cracks and thermal stress. To solve this problem, a module manufacturing method is proposed in which cells and wires are bonded through the lamination process. This method minimizes the thermal damage and mechanical stress applied to solar cells during the tabbing process, thereby manufacturing high-power modules. When adopting this method, the front electrode should be customized because it requires busbarless solar cells different from the existing busbar solar cells. Accordingly, the front electrode was designed using various simulation programs such as Griddler 2.5 and MathCAD, and the effect of the diameter and number of wires in contact with the front finger line of the solar cell on the module characteristics was analyzed. Consequently, the efficiency of the module manufactured with 12 wires and a wire diameter of 0.36 mm exhibited the highest efficiency at 20.28%. This is because even if the optical loss increases with the diameter of the wire, the series resistance considerably decreases rather than the loss of the short-circuit current, thereby improving the fill factor. The characteristics of the wire-embedded ethylene vinyl acetate (EVA) sheet module were confirmed to be better than those of the five busbar tabbing modules manufactured by the tabbing process; further, a high-power module that sufficiently compensated for the disadvantages of the tabbing module was manufactured.

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