scholarly journals Electron Gas Dynamic Conductivity Tensor on the Nanotube Surface in Magnetic Field

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
A. M. Ermolaev ◽  
S. V. Kofanov ◽  
G. I. Rashba

Kubo formula was derived for the electron gas conductivity tensor on the nanotube surface in longitudinal magnetic field considering spatial and time dispersion. Components of the degenerate and nondegenerate electron gas conductivity tensor were calculated. The study has showed that under high electron density, the conductivity undergoes oscillations of de Haas-van Alphen and Aharonov-Bohm types with the density of electrons and magnetic field changes.

2015 ◽  
Vol 91 (11) ◽  
Author(s):  
Miquel Royo ◽  
Carlos Segarra ◽  
Andrea Bertoni ◽  
Guido Goldoni ◽  
Josep Planelles

2019 ◽  
Vol 2019 (2) ◽  
pp. 19-21
Author(s):  
A.D. Razmyshlyaev ◽  
◽  
M.V. Ageeva ◽  
E.V. Lavrova ◽  
◽  
...  

2021 ◽  
Vol 1975 (1) ◽  
pp. 012037
Author(s):  
Y Kinoshita ◽  
T Yonenaka ◽  
Y Ichiki ◽  
T Akasaka ◽  
E S Otabe ◽  
...  

2021 ◽  
Vol 7 (8) ◽  
pp. eabf1388
Author(s):  
Phillip Dang ◽  
Guru Khalsa ◽  
Celesta S. Chang ◽  
D. Scott Katzer ◽  
Neeraj Nepal ◽  
...  

Creating seamless heterostructures that exhibit the quantum Hall effect and superconductivity is highly desirable for future electronics based on topological quantum computing. However, the two topologically robust electronic phases are typically incompatible owing to conflicting magnetic field requirements. Combined advances in the epitaxial growth of a nitride superconductor with a high critical temperature and a subsequent nitride semiconductor heterostructure of metal polarity enable the observation of clean integer quantum Hall effect in the polarization-induced two-dimensional (2D) electron gas of the high-electron mobility transistor. Through individual magnetotransport measurements of the spatially separated GaN 2D electron gas and superconducting NbN layers, we find a small window of magnetic fields and temperatures in which the epitaxial layers retain their respective quantum Hall and superconducting properties. Its analysis indicates that in epitaxial nitride superconductor/semiconductor heterostructures, this window can be significantly expanded, creating an industrially viable platform for robust quantum devices that exploit topologically protected transport.


Sign in / Sign up

Export Citation Format

Share Document