scholarly journals The Noise Performance of a Multiple-Input-Port and Multiple-Output-Port Low-Noise Amplifier Connected to an Array of Coupled Antennas

2011 ◽  
Vol 2011 ◽  
pp. 1-12 ◽  
Author(s):  
Frédéric Broydé ◽  
Evelyne Clavelier
Keyword(s):  
Low Noise ◽  
Output Port ◽  
Input Port ◽  
Wireless Receiver ◽  
Feedback Amplifier ◽  
Multiple Input ◽  
Natural Noise ◽  
Noise Amplifier ◽  
Definition Of ◽  
Noise Characterization

We address the noise characterization of a multiple-input-port and multiple-output-port (MIPMOP) device receiving signals from an array of antennas. A definition of the noise figures and natural noise figures of a MIPMOP device is provided, and the resulting properties are detailed in the impedance and admittance representations. We compute the natural noise figures of a low-noise MIPMOP amplifier comprising a MIMO series-series feedback amplifier (MIMO-SSFA), designed for a wireless receiver front-end.

scholarly journals Noise Characterization in InAlAs/InGaAs/InP pHEMTs for Low Noise Applications

2017 ◽  
Vol 7 (1) ◽  
pp. 176
Author(s):  
Z. A. Djennati ◽  
K. Ghaffour
Keyword(s):  
Noise Figure ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Noise Model ◽  
Good Prediction ◽  
High Electron ◽  
Source Impedance ◽  
Noise Amplifier ◽  
Noise Characterization ◽  
Noise Models

In this paper, a noise revision of an InAlAs/InGaAs/InP psoeudomorphic high electron mobility transistor (pHEMT) in presented. The noise performances of the device were predicted over a range of frequencies from 1GHz to 100GHz. The minimum noise figure (NFmin), the noise resistance (Rn) and optimum source impedance (Zopt) were extracted using two approaches. A physical model that includes diffusion noise and G-R noise models and an analytical model based on an improved PRC noise model that considers the feedback capacitance Cgd. The two approaches presented matched results allowing a good prediction of the noise behaviour. The pHEMT was used to design a single stage S-band low noise amplifier (LNA). The LNA demonstrated a gain of 12.6dB with a return loss coefficient of 2.6dB at the input and greater than -7dB in the output and an overall noise figure less than 1dB.

scholarly journals White Noise Characterization of N-MOSFETs for Physics-Based Cryogenic Device Modeling

2021 ◽  
Author(s):  
Kenji Ohmori ◽  
Shuhei Amakawa
Keyword(s):  
White Noise ◽  
Variable Temperature ◽  
Low Frequency ◽  
Low Noise ◽  
Broadband Noise ◽  
Noise Amplifier ◽  
Cryogenic Chamber ◽  
Noise Characterization ◽  
First Time

<p>We propose a methodology of variable-temperature broadband noise characterization for cryogenic MOSFETs. A DUT is mounted on a reusable PCB <i>vehicle</i> with a built-in low-noise amplifier, and loaded into a cryogenic chamber. Using the vehicle, we measured flicker (low frequency) and white noise, and have successfully revealed dominance of shot noise in the temperature range from 300 to 120 K for the first time.</p>

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