scholarly journals Characterization of Sucrose Thin Films for Biomedical Applications

2011 ◽  
Vol 2011 ◽  
pp. 1-6 ◽  
Author(s):  
S. L. Iconaru ◽  
F. Ungureanu ◽  
A. Costescu ◽  
M. Costache ◽  
A. Dinischiotu ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Biomedical Applications ◽  
Culture Collection ◽  
Gravimetric Analysis ◽  
Osteoblast Cells ◽  
Glass Substrates ◽  
Evaporation Technique ◽  
Partially Unfolded

Sucrose is a natural osmolyte accumulated in the cells of organisms as they adapt to environmental stress. In vitro sucrose increases protein stability and forces partially unfolded structures to refold. Thin films of sucrose (C12H22O11) were deposited on thin cut glass substrates by the thermal evaporation technique (P∼10−5torr). Characteristics of thin films were put into evidence by Fourier Transform Infrared Spectroscopy (FTIR), X-ray Photoelectron Spectroscopy (XPS), scanning electron microscopy (SEM), and differential thermal analysis and thermal gravimetric analysis (TG/DTA). The experimental results confirm a uniform deposition of an adherent layer. In this paper we present a part of the characteristics of sucrose thin films deposited on glass in medium vacuum conditions, as a part of a culture medium for osteoblast cells. Osteoblast cells were used to determine proliferation, viability, and cytotoxicity interactions with sucrose powder and sucrose thin films. The osteoblast cells have been provided from the American Type Culture Collection (ATCC) Centre. The outcome of this study demonstrated the effectiveness of sucrose thin films as a possible nontoxic agent for biomedical applications.

scholarly journals Morphological, optical and electrochromic properties of dry-lithiated nanostructured WO3 thin films

2018 ◽  
Vol 36 (2) ◽  
pp. 341-347
Author(s):  
K.V. Madhuri ◽  
M. Bujji Babu
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Optical Constants ◽  
Near Infrared ◽  
Lithium Content ◽  
X Ray ◽  
Glass Substrates ◽  
Evaporation Technique ◽  
Wo3 Thin Films ◽  
Deposited Films

Abstract Tungsten trioxide (WO3) thin films were prepared by thermal evaporation technique on thoroughly cleaned glass substrates at high pressure of 133.322 mPa in presence of argon. The substrate temperature was maintained from 6 °C to 8 °C with the help of a cold jar. The deposited films were annealed at 400 °C in air for about 2 hours. The films were characterized in terms of their composition by X-ray photoelectron spectroscopy. Subsequently, the laboratory developed dry lithiation method was used to intercalate lithium atoms into as-deposited films in various proportions. With the amount of lithium content inserted into the film, the films showed coloration in visible and near infrared regions. The morphology, coloration efficiency and optical constants of annealed and lithiated films were calculated.

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

scholarly journals Surface Properties and Biocompatibility of Anodized Titanium with a Potential Pretreatment for Biomedical Applications

Metals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1090
Author(s):  
Bai-Hung Huang ◽  
Yi-Jung Lu ◽  
Wen-Chien Lan ◽  
Muhammad Ruslin ◽  
Hung-Yang Lin ◽  
...  
Keyword(s):  
Porous Structure ◽  
Biomedical Applications ◽  
Grazing Incidence ◽  
Acid Pretreatment ◽  
Osteoblast Cells ◽  
In Vitro Biocompatibility ◽  
Porous Ti ◽  
Diphenyltetrazolium Bromide ◽  
Anodized Titanium

The effects of anodized titanium (Ti) with a potential hydrogen fluoride (HF) acid pretreatment through cathodization on the formation of nano-porous Ti dioxide (TiO2) layer were characterized using field-emission scanning electron microscopy, grazing incidence X-ray diffractometer, and contact angle goniometer. The biocompatibility was determined by 3-[4,5-dimethylthiazol-2-yl]-2,5-diphenyltetrazolium bromide (MTT) test. Analytical results found that a well-aligned nano-porous structure was formed on the anodized Ti surface with HF pretreatment concentration above 0.5%. Microstructure of the nano-porous Ti dioxide surface generated by anodization with HF pretreatment was composed of anatase and rutile phases, while the anodized Ti sample with HF pretreatment concentration of 0.5% presented excellent hydrophilicity surface. An in-vitro biocompatibility also indicated that osteoblast cells grown on the surface of the anodized Ti sample with HF pretreatment increased with the increase of culture time. The filopodia of osteoblast cells not only adhered flat, but also tightly grabbed the nano-porous structure for promoting cell adhesion and proliferation. Therefore, the anodized Ti with HF pretreatment can form a functionalized surface with great biocompatibility for biomedical applications, particularly for dental implants.

Preparation and characterization of V2O5 doped SiO2-TiO2 thin films

2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Marek Nocuń ◽  
Sławomir Kwaśny
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Gel Technique

AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.

scholarly journals Effect of Pb dopant On A.C mechanism of ZnS thin films

2019 ◽  
Vol 12 (25) ◽  
pp. 80-88
Author(s):  
Salma M. Shaban
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Atomic Weight ◽  
Thickness Effect ◽  
Frequency Effect ◽  
Frequency Range ◽  
Glass Substrates ◽  
Evaporation Technique ◽  
Vacuum Evaporation Technique ◽  
Effect Of Doping

Vacuum evaporation technique was used to prepare pure and doped ZnS:Pb thin films at10% atomic weight of Pb element onto glass substrates at room temperature for 200 nm thickness. Effect of doping on a.c electrical properties such as, a.c conductivity, real, and imaginary parts of dielectric constant within frequency range (10 KHz - 10 MHz) are measured. The frequency dependence of a.c conductivity is matched with correlated barrier hoping especially at higher frequency. Effect of doping on behavior of a.c mechanism within temperature range 298-473 K was studied.

Optical Properties of Thin Films of Haycockite

MRS Advances ◽  
2019 ◽  
Vol 4 (37) ◽  
pp. 2023-2033
Author(s):  
Barys Korzun ◽  
Marin Rusu ◽  
Thomas Dittrich ◽  
Anatoly Galyas ◽  
Andrey Gavrilenko
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Chemical Composition ◽  
Energy Band ◽  
Surface Photovoltage ◽  
Second Phase ◽  
Energy Band Gap ◽  
Flash Evaporation ◽  
Glass Substrates ◽  
Evaporation Technique

ABSTRACTThin films of haycockite Cu4Fe5S8 on glass substrates were deposited by flash evaporation technique from powders of this compound. The composition of thin films correspond to the atomic content of Cu, Fe, and S of 24.13, 27.90, and 47.97 at.% with the Cu/ Fe and S/ (Cu + Fe) atomic ratios of 0.87 and 0.92 respectively, whereas the corresponding theoretical values for this material amount to 0.80 and 0.89. The as-prepared thin films of haycockite consist of a set of separate fractions of approximately identical areas of about 400 - 600 μm2. It can be assumed that this structure evolved during cooling down of thin films since it completely covers the surface of thin films. A small inclusion of a second phase with the chemical composition close to talnakhite Cu9Fe8S16 is also observed. Haycockite Cu4Fe5S8 is found to be a direct gap semiconductor with the energy band gap Eg equal to 1.26 eV as determined using both transmission and surface photovoltage methods.

scholarly journals Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

2019 ◽  
Vol 9 (21) ◽  
pp. 4509
Author(s):  
Weijia Yang ◽  
Fengming Wang ◽  
Zeyi Guan ◽  
Pengyu He ◽  
Zhihao Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Magnetron Sputtering ◽  
Comparative Study ◽  
Quartz Glass ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
High Temperature Annealing ◽  
X Ray ◽  
Glass Substrates

In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.

Synthesis and Characterization of Nb-Doped TiO2 Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1117 ◽  
pp. 139-142 ◽  
Author(s):  
Marius Dobromir ◽  
Radu Paul Apetrei ◽  
A.V. Rogachev ◽  
Dmitry L. Kovalenko ◽  
Dumitru Luca
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Diffraction Patterns

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.

Effects on Structural, Electronic Transport & Optical Properties of Doped & Undoped ZnTe Thin Films for CdTe/CdS Solar Cells

2012 ◽  
Vol 510-511 ◽  
pp. 89-97
Author(s):  
G.H. Tariq ◽  
M. Anis-ur-Rehman
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Growth Parameters ◽  
Optical Measurements ◽  
X Ray Diffraction ◽  
Contact Materials ◽  
X Ray ◽  
Glass Substrates ◽  
Evaporation Technique ◽  
Znte Thin Films

To overcome the naturally existing Schottky barrier problem between p-CdTe and any metal, an intermediate semiconductor thin buffer layer is a better choice prior to the final metallization for contact. Among many investigated back contact materials the ZnTe is suitable as a buffer layer. ZnTe thin films were deposited onto glass substrates by the thermal evaporation technique under vacuum ~2×10-5mbar. Undoped ZnTe thin films are highly resistive, extrinsic doping of Cu was made to improve the electrical conductivity. Films were doped by immersing in Cu NO32.5H2O solutions for Cu doping. To optimize the growth parameters the prepared films were characterized using various techniques. The structural analysis of these films was performed by X-ray diffraction (XRD) technique and optical transmission. X-ray diffraction identified the phases present in these films and also observed that the prepared films were polycrystalline. Also the spectral dependence of absorption coefficient was determined from spectrophotometer. Energy band gap index were calculated from obtained optical measurements data.

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

2012 ◽  
Vol 198-199 ◽  
pp. 28-31
Author(s):  
Chun Ya Li ◽  
Xi Feng Li ◽  
Long Long Chen ◽  
Ji Feng Shi ◽  
Jian Hua Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Deposition Temperature ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
X Ray ◽  
Glass Substrates

Under different growth conditions, silicon Oxide (SiOx) thin films were deposited successfully on Si (100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The effects of deposition temperature on the structure and properties of SiOx films were studied using X ray diffraction (XRD), X ray photoelectron spectroscopy (XPS) and UV-Visible spectroscopy. The results show that the SiOx films were amorphous at different deposition temperature. The peaks of Si2p and O1s shifted to higher binding energy with temperature increasing. The SiOx films had high transmissivity at the range of 400-900nm. By analyzing the observation and data, the influence of deposition parameters on the electrical properties and interface characteristics of SiOx thin film prepared by PECVD is systematically discussed. At last, SiOx thin film with excellent electrical properties and good interface characteristic is prepared under the relatively optimum parameters.

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