scholarly journals Atomic Layer Deposition of MgO Nanofilms on BaMgAl10O17:Eu2+ Blue Phosphors

2011 ◽  
Vol 2011 ◽  
pp. 1-4 ◽  
Author(s):  
Hyug Jong Kim ◽  
Hee Gyu Kim ◽  
In Gu Kang ◽  
Byung Ho Choi
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Sem Analysis ◽  
Deposition Method ◽  
Phosphor Powder ◽  
Bulk Properties ◽  
X Ray ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method

This paper reports the growth of MgO nanofilms on BaMgAl10O17:Eu2+ blue phosphors by using the atomic layer deposition method. MgO films were prepared at 120°C by using Mg(CpEt)2 and H2O as the precursor and reactant gas, respectively. X-ray photoelectron spectroscopy (XPS) analysis showed that the Mg peak of the coated powders was higher than that of the uncoated powders. This confirmed that the surface of the coated phosphor powder comprised MgO nanoscale film. Through TEM and FE-SEM analysis, it was observed that the growth rate was about 0.33 Å/cycle and that the surface morphology of the coated phosphors was smoother and clearer than that of uncoated phosphor. The photoluminescence (PL) intensity for the coated phosphors was 5%–19% higher than that of uncoated phosphor. This means that the reactive surface is uniformly grown with stable magnesium oxide to reduce the dead surface layer without change of bulk properties.

scholarly journals Ytterbium-doped fibers fabricated with atomic layer deposition method

2012 ◽  
Vol 20 (22) ◽  
pp. 25085 ◽  
Author(s):  
Joan J. Montiel i Ponsoda ◽  
Lars Norin ◽  
Changgeng Ye ◽  
Markus Bosund ◽  
Mikko J. Söderlund ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Deposition Method ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method ◽  
Doped Fibers

scholarly journals Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Molecules ◽  
2020 ◽  
Vol 25 (21) ◽  
pp. 5043
Author(s):  
Chia-Hsun Hsu ◽  
Xin-Peng Geng ◽  
Wan-Yu Wu ◽  
Ming-Jie Zhao ◽  
Xiao-Ying Zhang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
High Speed ◽  
Oxygen Vacancies ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Zno Films ◽  
X Ray ◽  
Layer Deposition

In this study, aluminum-doped zinc oxide (Al:ZnO) thin films were grown by high-speed atmospheric atomic layer deposition (AALD), and the effects of air annealing on film properties are investigated. The experimental results show that the thermal annealing can significantly reduce the amount of oxygen vacancies defects as evidenced by X-ray photoelectron spectroscopy spectra due to the in-diffusion of oxygen from air to the films. As shown by X-ray diffraction, the annealing repairs the crystalline structure and releases the stress. The absorption coefficient of the films increases with the annealing temperature due to the increased density. The annealing temperature reaching 600 °C leads to relatively significant changes in grain size and band gap. From the results of band gap and Hall-effect measurements, the annealing temperature lower than 600 °C reduces the oxygen vacancies defects acting as shallow donors, while it is suspected that the annealing temperature higher than 600 °C can further remove the oxygen defects introduced mid-gap states.

scholarly journals Effect of ZnO and SnO2 Nanolayers at Grain Boundaries on Thermoelectric Properties of Polycrystalline Skutterudites

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2270
Author(s):  
Sang-il Kim ◽  
Jiwoo An ◽  
Woo-Jae Lee ◽  
Se Kwon ◽  
Woo Nam ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Atomic Layer Deposition ◽  
Grain Boundaries ◽  
Thermoelectric Properties ◽  
Phonon Scattering ◽  
Atomic Layer ◽  
Deposition Method ◽  
Plasma Sintering ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method

Nanostructuring is considered one of the key approaches to achieve highly efficient thermoelectric alloys by reducing thermal conductivity. In this study, we investigated the effect of oxide (ZnO and SnO2) nanolayers at the grain boundaries of polycrystalline In0.2Yb0.1Co4Sb12 skutterudites on their electrical and thermal transport properties. Skutterudite powders with oxide nanolayers were prepared by atomic layer deposition method, and the number of deposition cycles was varied to control the coating thickness. The coated powders were consolidated by spark plasma sintering. With increasing number of deposition cycle, the electrical conductivity gradually decreased, while the Seebeck coefficient changed insignificantly; this indicates that the carrier mobility decreased due to the oxide nanolayers. In contrast, the lattice thermal conductivity increased with an increase in the number of deposition cycles, demonstrating the reduction in phonon scattering by grain boundaries owing to the oxide nanolayers. Thus, we could easily control the thermoelectric properties of skutterudite materials through adjusting the oxide nanolayer by atomic layer deposition method.

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