scholarly journals Pulse Interval Modulation for Ultra-High Speed IR-UWB Communications Systems

Author(s):  
Marijan Herceg ◽  
Tomislav Švedek ◽  
Tomislav Matić
2004 ◽  
Vol 809 ◽  
Author(s):  
Katsuya Oda ◽  
Katsuyoshi Washio ◽  
Takashi Hashimoto

ABSTRACTSelf-aligned ultra-high-speed SiGe HBTs were developed by using selective epitaxial growth (SEG) technology. The use of HCl-free SEG, incorporation of C, and optimization of doping profiles significantly improves the performance of the HBT, producing a transistor with a high cutoff frequency of 170 GHz and a maximum oscillation frequency of 204 GHz, for a minimum ECL gate delay time of 4.8 ps. This is applied in a 16:1 MUX with a maximum clock rate of 57 GHz. A 0.13-μm SiGe BiCMOS technology is also realized without any degradation of CMOS due to the high stability of SiGe HBTs. Furthermore, the structure of SiGe HBT is optimized for an emitter scaled down towards 100 nm, mainly through the use of a funnel-shaped emitter electrode to reduce both emitter and base resistances. High-speed operation of a static frequency divider demonstrates the advantage of SiGe HBTs for ultra-high-speed communications systems.


2009 ◽  
Vol E92-C (7) ◽  
pp. 922-928 ◽  
Author(s):  
Kikuo MAKITA ◽  
Kazuhiro SHIBA ◽  
Takeshi NAKATA ◽  
Emiko MIZUKI ◽  
Sawaki WATANABE

Author(s):  
Ryoken Masuda ◽  
Manabu Horiuchi ◽  
Mitsuhide Sato ◽  
Yinggang Bu ◽  
Masami Nirei ◽  
...  

2018 ◽  
Author(s):  
Yi Chen Mazumdar ◽  
Michael E. Smyser ◽  
Jeffery Dean Heyborne ◽  
Daniel Robert Guildenbecher

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