scholarly journals Wetting ofAl2O3by Molten Aluminum: The Influence ofBaSO4Additions

2008 ◽  
Vol 2008 ◽  
pp. 1-12 ◽  
Author(s):  
Joaquin Aguilar-Santillan

The effects ofBaSO4additions on the wetting of alumina by molten aluminum were studied by the sessile drop technique. To study the effect ofBaSO4decomposition(1100–1150∘C), the additions were treated at two temperatures700∘C(973 K) and1450∘C(1723 K), respectively.BaSO4additions at low and high temperatures did not improve the nonwetting character of these compositions. However, at higher firing temperature, the formation ofBA6 (BaO•6Al2O3)has a nonwetting trend with increasing its content. To address theBA6specifically a pureBaO•6Al2O3was produced and tested. It was more nonwetting than the pure alumina. After the analysis of the contact angles for theBaSO4and theBA6 (BaO•6Al2O3), it was concluded that these additions to alumina do not inhibit wetting by molten aluminum. In fact, at the addition levels common for refractories, the wetting tendency of molten aluminum is enhanced. Alternative explanations for the effectiveness ofBaSO4additions to alumina refractories are discussed.

Coatings ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 906 ◽  
Author(s):  
Xiang Zhao Zhang ◽  
Pu Hao Xu ◽  
Gui Wu Liu ◽  
Awais Ahmad ◽  
Xiao Hui Chen ◽  
...  

The wettability of the metal/SiC system is not always excellent, resulting in the limitation of the widespread use of SiC ceramic. In this paper, three implantation doses of Si ions (5 × 1015, 1 × 1016, 5 × 1016 ions/cm2) were implanted into the 6H-SiC substrate. The wetting of Cu-(2.5, 5, 7.5, 10) Sn alloys on the pristine and Si-SiC were studied by the sessile drop technique, and the interfacial chemical reaction of Cu-Sn/SiC wetting couples was investigated and discussed. The Si ion can markedly enhance the wetting of Cu-Sn on 6H-SiC substrate, and those of the corresponding contact angles (θ) are raised partly, with the Si ion dose increasing due to the weakening interfacial chemical reactions among four Cu-Sn alloys and 6H-SiC ceramics. Moreover, the θ of Cu-Sn on (Si-)SiC substrate is first decreased and then increased from ~62° to ~39°, and ~70° and ~140°, with the Sn concentration increasing from 2.5%, 5% and 7.5% to 10%, which is linked to the reactivity of Cu-Sn alloys and SiC ceramic and the variation of liquid-vapor surface energy. Particularly, only a continuous graphite layer is formed at the interface of the Cu-10Sn/Si-SiC system, resulting in a higher contact angle (>40°).


2003 ◽  
Vol 34 (2) ◽  
pp. 193-199 ◽  
Author(s):  
E. Kapilashrami ◽  
A. Jakobsson ◽  
S. Seetharaman ◽  
A. K. Lahiri

2019 ◽  
Vol 11 (12) ◽  
pp. 11954-11960
Author(s):  
Supeera Nootchanat ◽  
Wisansaya Jaikeandee ◽  
Patrawadee Yaiwong ◽  
Chutiparn Lertvachirapaiboon ◽  
Kazunari Shinbo ◽  
...  

Carbon ◽  
1991 ◽  
Vol 29 (3) ◽  
pp. 449-455 ◽  
Author(s):  
Klaus J. Hüttinger ◽  
Sabine Höhmann ◽  
Marianne Seiferling

2016 ◽  
Vol 8 (31) ◽  
pp. 20474-20482 ◽  
Author(s):  
S. Ekgasit ◽  
N. Kaewmanee ◽  
P. Jangtawee ◽  
C. Thammacharoen ◽  
M. Donphoongpri

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