scholarly journals Microstructures Formation by Fluorocarbon Barrel Plasma Etching

2008 ◽  
Vol 2008 ◽  
pp. 1-5 ◽  
Author(s):  
A. El amrani ◽  
R. Tadjine ◽  
F. Y. Moussa
Keyword(s):  
Near Infrared ◽  
Secondary Ion Mass Spectrometry ◽  
Light Trapping ◽  
Surface Texturing ◽  
Solar Spectrum ◽  
Infrared Light ◽  
Process Time ◽  
Process Conditions ◽  
Porous Microstructures ◽  
High Level

The aim of our study is to generate microstructures in order to improve optical properties of monocrystalline silicon. By mean of fluorocarbon plasma barrel texturing and under certain process conditions, silicon turned black. As a result of silicon surface-plasma particles reactions, porous microstructures are formed, while a longer process time microspikes are developed. These microstructures are responsible of the high level of light trapping on almost the whole range of the usable portion of the solar spectrum. In the wavelength range of 400–1100 nm, the AM1.5G weighted reflection has been reduced to 6.20%. In addition to good trapping, this surface morphology leads to superior absorption, which is about 95% in the 600–1000 nm range and decreases to 36% at 1200 nm. This material is thus less transparent and absorbs near infrared light far more than the untreated silicon. Secondary ion mass spectrometry shows that elements from the ambient gas are deposited or superficially introduced into the silicon. In addition to surface texturing, these impurities are probably the reason of absorptance enhancement. Moreover, a pore formation mechanism is proposed.

scholarly journals Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Xiaomei Yao ◽  
Xutao Zhang ◽  
Tingting Kang ◽  
Zhiyong Song ◽  
Qiang Sun ◽  
...  
Keyword(s):  
Near Infrared ◽  
Cooling System ◽  
Variable Temperature ◽  
Light Trapping ◽  
Nanowire Array ◽  
Infrared Light ◽  
Laser Source ◽  
Array Detector ◽  
Weak Light ◽  
Gap States

AbstractA simple fabrication of end-bonded contacts InAsSb NW (nanowire) array detector to weak light is demonstrated in this study. The detector is fabricated using InAsSb NW array grown by molecular beam epitaxy on GaAs substrate. The metal-induced gap states are induced by the end-bonded contact which suppresses the dark current at various temperatures. The existence of the interface dipole due to the interfacial gap states enhances the light excitation around the local field and thus upgrades the photoresponsivity and photodetectivity to the weak light. The light intensity of the infrared light source in this report is 14 nW/cm2 which is about 3 to 4 orders of magnitude less than the laser source. The responsivity of the detector has reached 28.57 A/W at room temperature with the light (945 nm) radiation, while the detectivity is 4.81 × 1011 cm·Hz1/2 W−1. Anomalous temperature-dependent performance emerges at the variable temperature experiments, and we discussed the detailed mechanism behind the nonlinear relationship between the photoresponse of the device and temperatures. Besides, the optoelectronic characteristics of the detector clarified that the light-trapping effect and photogating effect of the NWs can enhance the photoresponse to the weak light across ultraviolet to near-infrared. These results highlight the feasibility of the InAsSb NW array detector to the infrared weak light without a cooling system.

scholarly journals Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light

2021 ◽  
Author(s):  
Xiaomei Yao ◽  
Xutao Zhang ◽  
Tingting Kang ◽  
Zhiyong Song ◽  
Qiang Sun ◽  
...  
Keyword(s):  
Near Infrared ◽  
Cooling System ◽  
Variable Temperature ◽  
Light Trapping ◽  
Nanowire Array ◽  
Infrared Light ◽  
Laser Source ◽  
Array Detector ◽  
Weak Light ◽  
Gap States

Abstract A simple fabrication of end-bonded contacts InAsSb NW (nanowire) array detector to weak light is demonstrated in this study. The detector is fabricated using InAsSb NW array grown by molecular beam epitaxy on GaAs substrate. The MIGS (metal-induced gap states) is induced by the end-bonded contact which suppresses the dark current at various temperatures. The existence of the interface dipole due to the interfacial gap states enhances the light excitation around the local field, thus upgrade the photo responsivity and photo detectivity to the weak light. The light intensity of the infrared light source in this report is 14 nW/cm2 which is about 3 to 4 orders of magnitude less than the laser source. The responsivity of the detector has reached 28.57 A/W at room temperature with the light (945 nm) radiation, while the detectivity is 4.81×1011 cm·Hz1/2 W−1. Anomalous temperature-dependent performance emerges at the variable temperature experiments, and we discussed the detailed mechanism behind the non-linear relationship between the photoresponse of the device and temperatures. Besides, the optoelectronic characteristics of the detector clarified that the light trapping effect and photogating effect of the NWs can enhance the photoresponse to the weak light across ultraviolet to near-infrared. These results highlight the feasibility of the InAsSb NW array detector to the infrared weak light without a cooling system.

CuS/RGO hybrid photocatalyst for full solar spectrum photoreduction from UV/Vis to near-infrared light

2018 ◽  
Vol 517 ◽  
pp. 80-85 ◽  
Author(s):  
Jie Wu ◽  
Baibai Liu ◽  
Zhenxing Ren ◽  
Mengying Ni ◽  
Can Li ◽  
...  
Keyword(s):  
Near Infrared ◽  
Solar Spectrum ◽  
Infrared Light ◽  
Near Infrared Light ◽  
Hybrid Photocatalyst

Cr(VI) reduction in presence of ZnS/RGO photocatalyst under full solar spectrum radiation from UV/vis to near-infrared light

2018 ◽  
Vol 315 ◽  
pp. 46-51 ◽  
Author(s):  
Zhenxing Ren ◽  
Lei Li ◽  
Baibai Liu ◽  
Xinjuan Liu ◽  
Zhu Li ◽  
...  
Keyword(s):  
Near Infrared ◽  
Solar Spectrum ◽  
Infrared Light ◽  
Near Infrared Light

scholarly journals Dual-band tunable narrowband near-infrared light trapping control based on a hybrid grating-based Fabry–Perot structure

2020 ◽  
Vol 28 (2) ◽  
pp. 1647 ◽  
Author(s):  
Kun Zhou ◽  
Qiang Cheng ◽  
Lu Lu ◽  
Bowen Li ◽  
Jinlin Song ◽  
...  
Keyword(s):  
Near Infrared ◽  
Light Trapping ◽  
Dual Band ◽  
Infrared Light ◽  
Near Infrared Light ◽  
Fabry Perot

scholarly journals Photochemical α-Aminonitrile Synthesis using Zn Phthalocyanines as Near Infrared Photocatalysts

2021 ◽  
Author(s):  
Caroline Grundke ◽  
Rodrigo Silva ◽  
Winald Kitzmann ◽  
Katja Heinze ◽  
Kleber de Oliveira ◽  
...  
Keyword(s):  
Near Infrared ◽  
Photophysical Properties ◽  
Solar Spectrum ◽  
Structural Similarity ◽  
Infrared Region ◽  
Infrared Light ◽  
Near Infrared Light ◽  
High Tendency ◽  
Long Time ◽  
Light Absorbers

While photochemical transformations with sunlight almost exclusively utilize the UV-Vis part of the solar spectrum, the majority of the photons emitted by the sun have frequencies in the near-infrared region. Phthalocyanines show high structural similarity to the naturally occurring light harvesting porphyrins, chlorins and mainly bacteriochlorins, and are also known for being efficient and affordable near-infrared light absorbers as well as triplet sensitizers for the production of singlet oxygen. Although having been neglected for a long time in synthetic organic chemistry due to their low solubility and high tendency towards aggregation, their unique photophysical properties and chemical robustness make phthalocyanines attractive photocatalysts for the application in near-infrared light-driven synthesis strategies. Herein, we report a cheap, simple and efficient photocatalytic protocol, which is easily scalable under continuous flow conditions. Various phthalocyanines were studied as near-infrared photosensitizers in oxidative cyanations of tertiary amines to generate α-aminonitriles, a synthetically versatile compound class.

The enhancement of near infrared light trapping in solar cells with backside crystalline silicon gratings: Realization and characterization investigation

Optik ◽  
2020 ◽  
Vol 200 ◽  
pp. 163143 ◽  
Author(s):  
M. Chahi ◽  
S.P. Alcántara ◽  
A. Bouhekka ◽  
J.D. Sib ◽  
G. Sanchez ◽  
...  
Keyword(s):  
Solar Cells ◽  
Near Infrared ◽  
Crystalline Silicon ◽  
Light Trapping ◽  
Infrared Light ◽  
Near Infrared Light

scholarly journals Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light

2020 ◽  
Author(s):  
Xiaomei Yao ◽  
Xutao Zhang ◽  
Tingting Kang ◽  
Zhiyong Song ◽  
Qiang Sun ◽  
...  
Keyword(s):  
Near Infrared ◽  
Cooling System ◽  
Variable Temperature ◽  
Light Trapping ◽  
Nanowire Array ◽  
Infrared Light ◽  
Laser Source ◽  
Array Detector ◽  
Weak Light ◽  
Gap States

Abstract A simple fabrication of end-bonded contacts InAsSb NW (nanowire) array detector to weak light is demonstrated in this study. The detector is fabricated using InAsSb NW array grown by molecular beam epitaxy on GaAs substrate. The MIGS (metal-induced gap states) is induced by the end-bonded contact which suppresses the dark current at various temperatures. The existence of the interface dipole due to the interfacial gap states enhances the light excitation around the local field, thus upgrade the photo responsivity and photo detectivity to the weak light. The light intensity of the infrared light source in this report is 14 nW/cm2 which is about 3 to 4 orders of magnitude less than the laser source. The responsivity of the detector has reached 28.57 A/W at room temperature with the light (945 nm) radiation, while the detectivity is 4.81×1011 cm·Hz1/2 W−1. Anomalous temperature-dependent performance emerges at the variable temperature experiments, and we discussed the detailed mechanism behind the non-linear relationship between the photoresponse of the device and temperatures. Besides, the optoelectronic characteristics of the detector clarified that the light trapping effect and photogating effect of the NWs can enhance the photoresponse to the weak light across ultraviolet to near-infrared. These results highlight the feasibility of the InAsSb NW array detector to the infrared weak light without a cooling system.

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