scholarly journals Electrical Properties of Self-Assembled Nano-Schottky Diodes

2008 ◽  
Vol 2008 ◽  
pp. 1-7 ◽  
Author(s):  
F. Ruffino ◽  
A. Canino ◽  
M. G. Grimaldi ◽  
F. Giannazzo ◽  
F. Roccaforte ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Rutherford Backscattering Spectrometry ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Self Organization ◽  
Conductive Atomic Force Microscopy ◽  
Au Nanoclusters ◽  
Force Microscopy ◽  
Atomic Force

A bottom-up methodology to fabricate a nanostructured material by Au nanoclusters on 6H-SiC surface is illustrated. Furthermore, a methodology to control its structural properties by thermal-induced self-organization of the Au nanoclusters is demonstrated. To this aim, the self-organization kinetic mechanisms of Au nanoclusters on SiC surface were experimentally studied by scanning electron microscopy, atomic force microscopy, Rutherford backscattering spectrometry and theoretically modelled by a ripening process. The fabricated nanostructured materials were used to probe, by local conductive atomic force microscopy analyses, the electrical properties of nano-Schottky contact Au nanocluster/SiC. Strong efforts were dedicated to correlate the structural and electrical characteristics: the main observation was the Schottky barrier height dependence of the nano-Schottky contact on the cluster size. Such behavior was interpreted considering the physics of few electron quantum dots merged with the concepts of ballistic transport and thermoionic emission finding a satisfying agreement between the theoretical prediction and the experimental data. The fabricated Au nanocluster/SiC nanocontact is suggested as a prototype of nano-Schottky diode integrable in complex nanoelectronic circuits.

Clustering of Gold on 6H-SiC and Local Nanoscale Electrical Properties

2007 ◽  
Vol 131-133 ◽  
pp. 517-522
Author(s):  
Francesco Ruffino ◽  
Filippo Giannazzo ◽  
Fabrizio Roccaforte ◽  
Vito Raineri ◽  
Maria Grazia Grimaldi
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Ballistic Transport ◽  
Gold Nanoclusters ◽  
Nanostructured Material ◽  
Self Organization ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Electron Quantum

In this work, a methodology, based on a self-organization process, to form gold nanoclusters on the 6H-SiC surface, is illustrated. By scanning electron microscopy and atomic force microscopy the gold self-organization induced by annealing processes was studied and modelled by classical limited surface diffusion ripening theories. These studies allowed us to fabricate Au nanoclusres/SiC nanostructured materials with tunable structural properties. The local electrical properties of such a nanostructured material were probed, by conductive atomic force microscopy collecting high statistics of I-V curves. The main observed result was the Schottky barrier height (SBH) dependence on the cluster size. This behaviour is interpreted considering the physics of few electron quantum dots merged with the ballistic transport. A quite satisfying agreement between the theoretical forecast behaviour and the experimental data has been found.

Towards a unified description of the charge transport mechanisms in conductive atomic force microscopy studies of semiconducting polymers

Nanoscale ◽  
2014 ◽  
Vol 6 (18) ◽  
pp. 10596-10603 ◽  
Author(s):  
D. Moerman ◽  
N. Sebaihi ◽  
S. E. Kaviyil ◽  
P. Leclère ◽  
R. Lazzaroni ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Carrier Mobility ◽  
Semiconducting Polymers ◽  
Transport Mechanisms ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Local Current ◽  
Unified Description

The nanoscale electrical properties of fibrillate poly-3-hexylthiophene are studied using conducting-AFM. The conditions for the prevalence of either local or bulk resistances dominated regime are identified. As local current is space charge limited, an analytical model is derived to determine locally carrier mobility and density.

Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy

2007 ◽  
Vol 556-557 ◽  
pp. 545-548 ◽  
Author(s):  
Filippo Giannazzo ◽  
Fabrizio Roccaforte ◽  
S.F. Liotta ◽  
Vito Raineri
Keyword(s):  
Atomic Force Microscopy ◽  
Schottky Barrier ◽  
Schottky Contact ◽  
Surface Preparation ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Nano Scale ◽  
Atomic Force ◽  
Novel Approach ◽  
Inhomogeneous Character

We present a novel approach based on conductive atomic force microscopy (c-AFM) for nano-scale mapping of the Schottky barrier height (SBH) between a semiconductor and an ultrathin (1-5 nm) metal film. The method was applied to characterize the uniformity of the Au/4H-SiC Schottky contact, which is attractive for applications due to the high reported (∼1.8 eV) SBH value. Since this system is very sensitive to the SiC surface preparation, we investigated the effect on the nano-scale SBH distribution of a ∼2 nm thick not uniform SiO2 layer. The macroscopic I-V characteristics on Au/SiC and Au/not uniform SiO2/SiC diodes showed that the interfacial oxide lowers the average SBH. The c-AFM investigation is carried out collecting arrays of I-V curves for different tip positions on 1μm×1μm area. From these curves, 2D SBH maps are obtained with 10- 20 nm spatial resolution and energy resolution <0.1 eV. The laterally inhomogeneous character of the Au/SiC contact is demonstrated. In fact, a SBH distribution peaked at 1.8 eV and with tails from 1.6 eV to 2.1 eV is obtained. Moreover, in the presence of the not uniform oxide at the interface, the SBH distribution exhibits a 0.3 eV peak lowering and a broadening (tails from 1.1 eV to 2.1 eV).

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