scholarly journals Sol-Gel Processing of Nanostructured Inorganic Scintillating Materials

2007 ◽  
Vol 2007 ◽  
pp. 1-8 ◽  
Author(s):  
J. M. Nedelec

The development of scintillating materials is believed to reach a new step by controlling their preparation on a nanometric level. Sol-Gel chemistry offers very unique tools for nanoscale mastering of the materials preparation. In particular, shaping of the materials as thin films or nanoparticles offers new application in medical imaging. The control of doping ions dispersion thanks to soft chemistry is also a great advantage of such synthetic routes. In this paper, we will review recent work devoted to the sol-gel preparation of inorganic scintillating materials. We will focus on the new possibilities and advantages offered by sol-gel chemistry for the preparation of new scintillators and improvement of existing ones.

2010 ◽  
Vol 22 (6) ◽  
pp. 666-671 ◽  
Author(s):  
Si-Jia Liu ◽  
Hua Wang ◽  
Ji-Wen Xu ◽  
Ming-Fang Ren ◽  
Ling Yang ◽  
...  

2015 ◽  
Vol 3 (9) ◽  
pp. 2115-2122 ◽  
Author(s):  
Wei Sun ◽  
Jing-Feng Li ◽  
Qi Yu ◽  
Li-Qian Cheng

We prepared high-quality Bi1−xSmxFeO3 films on Pt(111)/Ti/SiO2/Si substrates by sol–gel processing and found rhombohedral–orthorhombic phase transition with enhanced piezoelectricity.


2012 ◽  
Vol 520 (19) ◽  
pp. 6050-6056 ◽  
Author(s):  
Janyce Franc ◽  
Vincent Barnier ◽  
Francis Vocanson ◽  
Emilie Gamet ◽  
Maryline Lesage ◽  
...  
Keyword(s):  
Sol Gel ◽  

1990 ◽  
Vol 12 (2) ◽  
pp. 29-34 ◽  
Author(s):  
P. Ravindranathan ◽  
S. Komarneni ◽  
A. S. Bhalla ◽  
L. E. Cross ◽  
R. Roy

1993 ◽  
Vol 35 (3) ◽  
pp. 259-263 ◽  
Author(s):  
Liu Meidong ◽  
Wang Peiying ◽  
Wu Guoan ◽  
Rao Yunhua
Keyword(s):  
Sol Gel ◽  

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.


1995 ◽  
Vol 23 (1-3) ◽  
pp. 123-127 ◽  
Author(s):  
Ulagaraj Selvaraj ◽  
Alamanda V. Prasadarao ◽  
Sridhar Komarneni ◽  
Rustum Roy
Keyword(s):  
Sol Gel ◽  

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