Hot Electron Modelling of HEMTs
Keyword(s):
The hot-electron two-dimensional HEMT with recessed gate is modelled by solving the Poisson, current continuity and energy transport equations consistently with the Schrödinger equation using a finite difference scheme. New expressions are used for the energy densities inside and outside the quantum wells. A method is described for pinning the conduction band at the contact edge to produce an extremely stable numerical solution. Results are presented for an eight layer GaAs-ALGaAs-InGaAs device.
2016 ◽
Vol 40
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pp. 306-312
1990 ◽
Vol 20
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pp. 37-46
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2001 ◽
Vol 09
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pp. 183-203
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1992 ◽
Vol 24
(4)
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pp. 49-59
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Keyword(s):
2003 ◽
Vol 137
(1)
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pp. 131-137
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1986 ◽
Vol 6
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pp. 259-274
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