scholarly journals An Algorithm to Develop Lumped Model for Gunn-Diode Dynamics

1998 ◽  
Vol 21 (1) ◽  
pp. 17-21
Author(s):  
Umesh Kumar
Keyword(s):  
Drift Velocity ◽  
Nonlinear Diffusion ◽  
High Field ◽  
Gunn Diode ◽  
Lumped Model ◽  
Gunn Diodes ◽  
Diffusion Effects

A nonlinear lumped model can be developed for Gunn-Diodes to describe the diffusion effects as the domain travels from cathode to anode of a Gunn-Diode. The model describes the domain extinction and nucleation phenomena. It allows the user to specify arbitrary nonlinear drift velocity V(E) and nonlinear diffusion D(E).The model simulates arbitrary Gunn-Diode circuits operating in any matured high field domain or in the LSA mode.Here we have constructed an algorithm to lead to development of this model

Fluctuations in Drift Velocity of High-Field Domains in n-GaAs

1972 ◽  
Vol 50 (6) ◽  
pp. 617-618
Author(s):  
L. G. Hart
Keyword(s):  
Monte Carlo ◽  
Drift Velocity ◽  
Frequency Modulation ◽  
High Field ◽  
Gunn Diode ◽  
Accumulation Layer ◽  
Transport Studies ◽  
Free Running

A source of frequency-modulation (FM) noise in a free-running Gunn diode, due to fluctuations in valley population in the accumulation layer, is investigated using the results of recent Monte-Carlo high-field transport studies.

Analysis of the high‐field domain dynamics in a planar Gunn diode by using a stroboscopic SEM

1979 ◽  
Vol 50 (1) ◽  
pp. 530-536 ◽  
Author(s):  
Masamitsu Masuda ◽  
Takeshi Ogura ◽  
Jiro Koyama ◽  
Hiromu Fujioka ◽  
Teruo Hosokawa ◽  
...  
Keyword(s):  
High Field ◽  
Gunn Diode ◽  
Domain Dynamics

High-field drift velocity of electrons in p-type silicon

1970 ◽  
Vol 13 (7) ◽  
pp. 1115-1117 ◽  
Author(s):  
J.L. Su ◽  
Y. Nishi ◽  
J.L. Moll ◽  
A. Neukermans
Keyword(s):  
Drift Velocity ◽  
High Field ◽  
Type Silicon ◽  
P Type ◽  
Field Drift

Influence of Boundary Conditions on High-Field Domains in Gunn Diodes

1969 ◽  
Vol 186 (3) ◽  
pp. 793-800 ◽  
Author(s):  
K. W. Böer ◽  
G. Döhler
Keyword(s):  
Boundary Conditions ◽  
High Field ◽  
Gunn Diodes

scholarly journals Measurement of the drift velocity of holes in silicon at high-field strengths

1967 ◽  
Vol 14 (1) ◽  
pp. 44-46 ◽  
Author(s):  
V. Rodriguez ◽  
H. Ruegg ◽  
M.-A. Nicolet
Keyword(s):  
Drift Velocity ◽  
High Field ◽  
Field Strengths

scholarly journals High-Field Hole Transport in Strained Si and SiGe by Monte Carlo Simulation: Full Band Versus Analytic Band Models

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 41-45 ◽  
Author(s):  
F. M. Bufler ◽  
P. Graf ◽  
B. Meinerzhagen
Keyword(s):  
Monte Carlo ◽  
Drift Velocity ◽  
High Field ◽  
Hole Transport ◽  
Band Model ◽  
Strained Si ◽  
Saturation Velocity ◽  
Full Band ◽  
Structure Description ◽  
Strained Sige

Monte Carlo results are presented for the velocity-field characteristics of holes in (i) unstrained Si, (ii) strained Si and (iii) strained SiGe using a full band model as well as an analytic nonparabolic and anisotropic band structure description. The full band Monte Carlo simulations show a strong enhancement of the drift velocity in strained Si up to intermediate fields, but yield the same saturation velocity as in unstrained Si. The drift velocity in strained SiGe is also significantly enhanced for low fields while being substantially reduced in the high-field regime. The results of the analytic band models agree well with the full band results up to medium field strengths and only the saturation velocity is significantly underestimated.

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