scholarly journals Application of the Wigner-Function Formulation to Mesoscopic Systems in Presence of Electron-Phonon Interaction

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 185-190 ◽  
Author(s):  
C. Jacoboni ◽  
A. Abramo ◽  
P. Bordone ◽  
R. Brunetti ◽  
M. Pascoli
Keyword(s):  
Wigner Function ◽  
Quantum Dynamics ◽  
Computational Analysis ◽  
Charge Carriers ◽  
Open Boundary ◽  
Open Boundary Conditions ◽  
Mesoscopic Systems ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Function Formulation

A theoretical and computational analysis of the quantum dynamics of charge carriers in presence of electron-phonon interaction based on the Wigner function is here applied to the study of transport in mesoscopic systems. Numerical applications are shown for a) a wave packet scattering with phonons while crossing a potential profile and b) electrons scattering with phonons in a finite device with open boundary conditions.

NANOELECTRONIC DEVICE SIMULATION BASED ON THE WIGNER FUNCTION FORMALISM

2007 ◽  
Vol 17 (03) ◽  
pp. 475-484
Author(s):  
HANS KOSINA
Keyword(s):  
Monte Carlo ◽  
Kinetic Equation ◽  
Wigner Function ◽  
Transport Model ◽  
Collision Operator ◽  
Iteration Scheme ◽  
Open Boundary ◽  
Potential Operator ◽  
Open Boundary Conditions ◽  
Carrier Scattering

Coherent transport in mesoscopic devices is well described by the Schrödinger equation supplemented by open boundary conditions. When electronic devices are operated at room temperature, however, a realistic transport model needs to include carrier scattering. In this work the kinetic equation for the Wigner function is employed as a model for dissipative quantum transport. Carrier scattering is treated in an approximate manner through a Boltzmann collision operator. A Monte Carlo technique for the solution of this kinetic equation has been developed, based on an interpretation of the Wigner potential operator as a generation term for numerical particles. Including a multi-valley semiconductor model and a self-consistent iteration scheme, the described Monte Carlo simulator can be used for routine device simulations. Applications to single barrier and double barrier structures are presented. The limitations of the numerical Wigner function approach are discussed.

Wigner Function for Open Systems with Electron–Phonon Interaction

1997 ◽  
Vol 204 (1) ◽  
pp. 303-305 ◽  
Author(s):  
P. Bordone ◽  
A. Abramo ◽  
R. Brunetti ◽  
M. Pascoli ◽  
C. Jacoboni
Keyword(s):  
Wigner Function ◽  
Open Systems ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

The simulation of the electron-phonon interaction in silicon

2018 ◽  
Vol 30 (12) ◽  
pp. 3-16
Author(s):  
A. Berezin ◽  
◽  
Yu. Volkov ◽  
M. Markov ◽  
I. Tarakanov ◽  
...  
Keyword(s):  
Phonon Interaction ◽  
Electron Phonon Interaction

Linear electron-phonon interaction in dye-doped polymers

1989 ◽  
Vol 162 (3) ◽  
pp. 217-220 ◽  
Author(s):  
S. Saikan ◽  
A. Imaoka ◽  
Y. Kanematsu ◽  
T. Kishida
Keyword(s):  
Linear Electron ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Doped Polymers
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