scholarly journals Electrostatic Formation of Coupled Si/SiO2 Quantum Dot Systems

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 555-558 ◽  
Author(s):  
Per Hyldgaard ◽  
Henry K. Harbury ◽  
Wolfgang Porod

We present three-dimensional numerical modeling results for gated Si/SiO2 quantum dot systems in the few-electron regime. In our simulations, the electrostatic confining potential results from the Poisson equation assuming a self-consistent Thomas-Fermi charge model. We find that a very thin SiO2 top insulating layer allows an effective control with single-electron confinement in quantum dots with radius less than 10nm and investigate the detailed potential and resulting charge densities. Our three-dimensional finite-element modeling tool allows future investigations of the charge coupling in gated few-electron quantum-dot cellular automata.

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 335-339 ◽  
Author(s):  
Minhan Chen ◽  
Wolfgang Porod

We present numerical simulations for the design of gated few-electron quantum dot structures in the Si/SiO2 material system. Because of the vicinity of the quantum dots to the exposed surface, we take special care in treating the boundary conditions at the oxide/vacuum interfaces. In our simulations, the confining potential is obtained from the Poisson equation with a Thomas-Fermi charge model. We find that the dot occupancy can be effectively controlled in the few-electron regime.


1999 ◽  
Vol 571 ◽  
Author(s):  
Y.W. Zhang

ABSTRACTA three dimensional finite element method is used to simulate the kinetic process of island formation in quantum dot superlattices. Depending on the thickness of spacer layers and interruption time, top layer islands can be fully vertically aligned with the same morphology as the buried islands, or can be partially vertically aligned with increasingly less uniform and regular arrangement, or can be alternately misaligned with increasingly uniform and regular arrangement.


2007 ◽  
Vol 35 (3) ◽  
pp. 226-238 ◽  
Author(s):  
K. M. Jeong ◽  
K. W. Kim ◽  
H. G. Beom ◽  
J. U. Park

Abstract The effects of variations in stiffness and geometry on the nonuniformity of tires are investigated by using the finite element analysis. In order to evaluate tire uniformity, a three-dimensional finite element model of the tire with imperfections is developed. This paper considers how imperfections, such as variations in stiffness or geometry and run-out, contribute to detrimental effects on tire nonuniformity. It is found that the radial force variation of a tire with imperfections depends strongly on the geometrical variations of the tire.


1992 ◽  
Vol 20 (1) ◽  
pp. 33-56 ◽  
Author(s):  
L. O. Faria ◽  
J. T. Oden ◽  
B. Yavari ◽  
W. W. Tworzydlo ◽  
J. M. Bass ◽  
...  

Abstract Recent advances in the development of a general three-dimensional finite element methodology for modeling large deformation steady state behavior of tire structures is presented. The new developments outlined here include the extension of the material modeling capabilities to include viscoelastic materials and a generalization of the formulation of the rolling contact problem to include special nonlinear constraints. These constraints include normal contact load, applied torque, and constant pressure-volume. Several new test problems and examples of tire analysis are presented.


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