scholarly journals A Compound Semiconductor Process Simulator and its Application to Mask Dependent Undercut Etching

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 393-397
Author(s):  
Masami Kumagai ◽  
Kiyoyuki Yokoyama ◽  
Satoshi Tazawa
Keyword(s):  
Chemical Etching ◽  
Compound Semiconductors ◽  
Compound Semiconductor ◽  
Mask Material ◽  
Atomic Species ◽  
Deposition Processes ◽  
Different Response ◽  
Process Simulator ◽  
Good Agreement ◽  
Semiconductor Process

This paper describes a process simulator that is designed to describe the etching and deposition processes used in constructing compound semiconductors, which have at least two different atomic species. This nature dictates a very different response to compound semiconductor process from the silicon process. One of the most remarkable processes in compound semiconductors is the reverse-mesa formation. This simulator successfully represents the mesa and the reverse mesa profiles that are often observed after chemical etching. The mask material dependence of the undercut etching can also be simulated with a good agreement between the experimental and the simulated shapes.

Real-Time Diagnosis of Etching and Deposition Processes by Spectroscopic Ellipsometry

1983 ◽  
Vol 29 ◽  
Author(s):  
D. E. Aspnes ◽  
R. P. H. Chang
Keyword(s):  
High Pressure ◽  
Data Analysis ◽  
Laser Beam ◽  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Chemical Etching ◽  
Polarization State ◽  
Surface Information ◽  
Deposition Processes ◽  
Time Diagnosis

ABSTRACTRecent advances in instrumentation and data analysis have made spectroscopic ellipsometry a routine analytic tool with submonolayer sensitivity for monitoring and controlling cleaning, etching, deposition, or other processes that take place in relatively high-pressure or reactive environments. We discuss representative applications in chemical etching, plasma processing, and MOCVD to illustrate analytical procedures and to indicate other potential uses of the technique. The possibility of extracting surface information already carried in the polarization state of the processing laser beam is also discussed.

ELECTRONIC, OPTICAL AND MECHANICAL PROPERTIES OF AIIBVI SEMICONDUCTORS

2012 ◽  
Vol 26 (08) ◽  
pp. 1250020 ◽  
Author(s):  
DHEERENDRA SINGH YADAV ◽  
A. S. VERMA
Keyword(s):  
Experimental Data ◽  
Mechanical Properties ◽  
Energy Gap ◽  
Average Energy ◽  
Compound Semiconductors ◽  
Electronic Polarizability ◽  
Zinc Blende ◽  
Energy Gaps ◽  
Optical And Mechanical Properties ◽  
Good Agreement

The modified dielectric theory of solids is applied to investigate electronic, optical and mechanical properties of A II B VI binary semiconductors ( ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, HgS, HgSe & HgTe ). The values of homopolar gaps (Eh), heteropolar gaps (Ec) and average energy gaps (Eg) were evaluated for these A II B VI groups of binary semiconductors with Zinc-blende (ZB) structure. The derived values of average energy gap (Eg) were found to be in excellent agreement with the values obtained from the Penn model except ZnO . The electronic polarizability was investigated using Chemla's relation and the values were found to be in a very good agreement with the results obtained from the Clausius–Mossotti relation. The crystal ionicity (fi) was evaluated and the obtained values were compared with the values obtained by different researchers. The evaluated values of crystal ionicity were used to calculate the electronic, optical, mechanical properties such as bulk modulus (B in GPa) cohesive energy or total energy (U in Ryd. electron) and microhardness (H in GPa) of these compound semiconductors. A good agreement has been found between calculated and experimental data.

Group III Metal Clusters on (001) III-V Compound Semiconductors

1993 ◽  
Vol 317 ◽  
Author(s):  
S. Puddephatt ◽  
T.D. Lowes
Keyword(s):  
Thermal Decomposition ◽  
Metal Clusters ◽  
Compound Semiconductors ◽  
Compound Semiconductor ◽  
Knudsen Cell ◽  
Semiconductor Substrate ◽  
Significant Cluster ◽  
Group V ◽  
Group Iii ◽  
Excess Concentration

ABSTRACTThe interaction of group III Metal clusters with the underlying III-V compound semiconductor substrate is examined. Specifically, both In and Ga on InP and GaAs (001) are discussed. Two Methods of obtaining an excess concentration of the group III Metal are treated: thermal decomposition in UHV where preferential group V dissociation and vaporization leaves a supersaturation of metal and Knudsen cell deposition in an MBE system. It is shown that the resulting morphologies for all cases are attributable to significant cluster/substrate interactions.

Step Coverage Modeling of Thin Films Deposited by CVD Using Finite Element Method

1991 ◽  
Vol 250 ◽  
Author(s):  
Ching-Yi Tsai ◽  
Seshu B. Desu
Keyword(s):  
Finite Element ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Element Model ◽  
Number Ratio ◽  
Step Coverage ◽  
Model Predictions ◽  
Dimensional Finite Element ◽  
Deposition Processes ◽  
Good Agreement

AbstractA two—dimensional finite element model was developed to study the step coverage of submicron trenches with arbitrary shape under chemical vapor deposition processes. Parameters that characterize the step coverage were found to be the surface Damkohler number, ratio of diffusion coefficients inside and outside of the trench, and aspect ratio of the trench geometry. Efforts were concentrated on studying the step coverage of SiO2 film deposited from SiH4/O2 precursors within rectangular shape trenches. The model predictions were found to be in good agreement with reported experimental results.

Pit nucleation in compound semiconductor thin films

2003 ◽  
Vol 794 ◽  
Author(s):  
Mathieu Bouville ◽  
Michael L. Falk ◽  
Joanna Mirecki Millunchick
Keyword(s):  
Thin Films ◽  
Three Dimensional ◽  
Growth Conditions ◽  
Compound Semiconductor ◽  
Nucleation Process ◽  
Stages Of Growth ◽  
Semiconductor Thin Films ◽  
Experimental Parameters ◽  
Pit Nucleation ◽  
Good Agreement

ABSTRACTPit nucleation has been observed in a variety of semiconductor thin films. We present a model in which pit nucleation is considered to arise from a near-equilibrium nucleation process in which the adatom concentration plays an important role. Although pits relieve elastic energy more efficiently than islands, pit nucleation is prevented if the adatom concentration is too high. Inhomogeneities in the adatom density on the surface due to three-dimensional islands enhance pit nucleation. Thermodynamic considerations predict several different growth regimes in which pits may nucleate at different stages of growth depending on the materials system and growth conditions. However kinetics must be taken into account to make direct comparisons to experimental observations. These comparisons show good agreement given the uncertainties in quantifying experimental parameters such as the surface energy.

scholarly journals Experimental and numerical study of granular flow and fence interaction

2004 ◽  
Vol 38 ◽  
pp. 135-138 ◽  
Author(s):  
Thierry Faug ◽  
Mohamed Naaim ◽  
Florence Naaim-Bouvet
Keyword(s):  
Granular Flow ◽  
Numerical Study ◽  
Slope Angle ◽  
Granular Flows ◽  
Snow Avalanches ◽  
Shallow Water Theory ◽  
Gravity Driven ◽  
Deposition Processes ◽  
Set Up ◽  
Good Agreement

AbstractDense snow avalanches are regarded as dry granular flows. This paper presents experimental and numerical modelling of deposition processes occurring when a gravity-driven granular flow meets a fence. A specific experimental device was set up, and a numerical model based on shallow-water theory and including a deposition model was used. Both tools were used to quantify how the retained volume upstream of the fence is influenced by the channel inclination and the obstacle height. We identified two regimes depending on the slope angle. In the slope-angle range where a steady flow is possible, the retained volume has two contributions: deposition along the channel due to the roughness of the bed and deposition due to the fence. The retained volume results only from the fence effects for higher slopes. The effects of slope on the retained volume also showed these two regimes. For low slopes, the retained volume decreases strongly with increasing slope. For higher slopes, the retained volume decreases weakly with increasing slope. Comparison between the experiments and computed data showed good agreement concerning the effect of fence height on the retained volume.

Toward the Surface Preparation of InGaAs for the Future CMOS Integration

2018 ◽  
Vol 282 ◽  
pp. 39-42 ◽  
Author(s):  
Sang Woo Lim
Keyword(s):  
Lattice Mismatch ◽  
Surface Reactions ◽  
Surface Preparation ◽  
Surface Oxidation ◽  
Compound Semiconductors ◽  
Compound Semiconductor ◽  
Wet Etching ◽  
Material Loss ◽  
High K ◽  
Made In

The integration of III-V and Ge materials on Si surface causes many issues with complexity such as lattice mismatch with silicon. In particular, the surface preparation and passivation of InGaAs is very challenging, because the formation of InGaAs/high-K interface is important, but not well understood. For the systematical study of InGaAs surface during wet processes, the effect of various wet etching processes on the surfaces of binary III-V compound semiconductors (GaAs, InAs, GaSb and InSb) was studied from the viewpoints of surface oxidation, material loss (dissolution), and passivation. Based on that, further effort to understand the surface reactions on ternary InGaAs compound semiconductor was made. In addition, process sequential effect on the InGaAs surface was investigated.

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