scholarly journals Gain Calculation in a Quantum Well Laser Simulator Using an Eight Band k.p Model

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 367-371 ◽  
Author(s):  
F. Oyafuso ◽  
P. von Allmen ◽  
M. Grupen ◽  
K. Hess
Keyword(s):  
Matrix Element ◽  
Quantum Well ◽  
Electronic Band Structure ◽  
Rate Equations ◽  
Band Model ◽  
Drift Diffusion ◽  
Constant Matrix ◽  
Electronic Band ◽  
Quantum Well Laser ◽  
Momentum Matrix Element

Effects of non-parabolicity and band-warping of the energy dispersion are entered in a quantum well laser simulator (MINILASE-II), which self-consistently solves Schödinger's equation, Poisson's equation, the drift diffusion equations, and the photon rate equations. An eight band k.p model is used to determine the electronic band structure for a strained-layer In.2Ga.8As/Al.1Ga.9As system. The k.p calculation is performed independently of the laser simulator, and exported to MINILASE-II in the form of a density of states and an energydependent averaged momentum matrix element. The results obtained for the gain and modulation response are compared to those obtained from a parabolic band model with a constant matrix element.

Characterization of InN-In0.25Ga0.75N Quantum Well Laser with In0.4Al0.6N Layers for 1300 nm Band

MRS Advances ◽  
2016 ◽  
Vol 1 (28) ◽  
pp. 2051-2057 ◽  
Author(s):  
Md. Mobarak Hossain Polash ◽  
Kamruzzaman Khan
Keyword(s):  
Optical Properties ◽  
Numerical Model ◽  
Quantum Well ◽  
Electronic Band Structure ◽  
Compressive Strain ◽  
Strain Effect ◽  
Transition Elements ◽  
Electronic Band ◽  
Layer Width ◽  
Quantum Well Laser

ABSTRACTA wurtzite-strained nitride Quantum Well Laser has been characterized for short distance communication wavelength. InN and In0.25Ga0.75N have been chosen as well material and barrier material respectively with In0.4Al0.6N SCH layers at the end of barrier layers to improve the carrier and photon confinement within the active region. This structure shows less compressive strain (7.33%) with respect to previously proposed structure which makes the structure more suitable for fabrication. To obtain the electronic band structure, self-consistent method with k.p formalism has been performed where valence band mixing effect, strain effect and spontaneous and piezoelectric polarization effect has been included. From the electronic characteristics, the optical properties have been performed with numerical model. From the optical properties, the structure has been found as TE polarized with C1-HH1, C1-LH1, C2-HH1 and C2-LH1 dominating transition elements. From the performance of the numerical model, 4731.98 cm−1 optical gain for TE polarization at 1315.5 nm emission wavelength and 8.017×1027 cm−3s−1eV−1 spontaneous emission rate at 1301.7nm wavelength have been found for 12Å well width, 17Å barrier width and 52Å SCH layer width at 5×1019 cm−3 carrier density. The obtained properties have been shown a good agreement with previously published works.

scholarly journals Rate Equation Modelling of Nonlinear Dynamics in Directly Modulated Multiple Quantum Well Laser Diodes

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 355-360 ◽  
Author(s):  
Stephen Bennett ◽  
Christopher M. Snowden ◽  
Stavros Iezekiel
Keyword(s):  
Nonlinear Dynamics ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Period Doubling ◽  
Rate Equations ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Wide Range ◽  
Multiple Quantum Well Laser ◽  
Good Agreement

A theoretical (using rate equations) and experimental study of the nonlinear dynamics of a distributed feedback multiple quantum well laser diode is presented. The analysis is performed under direct modulation. Period doubling and period tripling are identified in both the measurements and simulations. Period doubling is found over a wide range of modulation frequencies in the laser. Computational results using rate equations show good agreement with the experimental results.

A Comparison of the Direct Configurational Averaging and Connolly-Williams Methods of Obtaining Effective Pair Interactions in Substitutionally Disordered Alloys

1990 ◽  
Vol 193 ◽  
Author(s):  
C. Wolverton ◽  
H. Dreysse ◽  
D. De Fontaine
Keyword(s):  
Thermodynamic Properties ◽  
Electronic Band Structure ◽  
Tight Binding ◽  
Band Model ◽  
Exact Results ◽  
Electronic Band ◽  
Disordered Alloys ◽  
Effective Pair ◽  
Grand Canonical ◽  
Effective Cluster

ABSTRACTIn order to calculate thermodynamic properties of disordered alloys, it is necessary to extract certain parameters (namely effective cluster interactions) from electronic band structure models. Several of these methods exist, thus necessitating a comparison of their accuracy and convergence. Direct configurational averaging is performed in both a canonical (concentration-dependent) and grand canonical (concentration- independent) scheme. These results are compared with those derived from the Connolly-Williams Method and “exact” results obtained on a simple, tight-binding, d-band model.

Comparison between the Monte Carlo method and the drift-diffusion approximation in quantum-well laser simulation

1998 ◽  
Vol 84 (9) ◽  
pp. 4673-4676 ◽  
Author(s):  
A. D. Güçlü ◽  
R. Maciejko ◽  
A. Champagne ◽  
M. Abou-Khalil ◽  
T. Makino
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
Quantum Well ◽  
Diffusion Approximation ◽  
Drift Diffusion ◽  
Quantum Well Laser ◽  
The Monte Carlo Method ◽  
Laser Simulation

Magnetoreflection in Ion-Implanted Graphite

1983 ◽  
Vol 27 ◽  
Author(s):  
L.E Mcneil ◽  
B.S. Elman ◽  
M.S Dresselhaus ◽  
G. Dresselhaus ◽  
T. Venkatesan
Keyword(s):  
Raman Spectroscopy ◽  
Band Structure ◽  
Ion Implantation ◽  
Room Temperature ◽  
Electronic Band Structure ◽  
Band Model ◽  
Electronic Band ◽  
Lattice Damage ◽  
Induced Changes ◽  
Foreign Species

ABSTRACTThe use of a hot stage (T ∼ 600°C) for ion implantation into graphite permits the introduction of foreign species into the host material while eliminating most of the lattice damage associated with ion implantation at room temperature. This permits the use of the magnetoreflection technique for examination of changes in the electronic band structure induced by implantation Samples of graphite implanted with 31P and 11B at various energies and fluences are examined, and the in-plane and c-axis disorder are characterized using Raman spectroscopy and Rutherford Backscattering Spectrometer (RBS) techniques. Implantation-induced changes in the electronic band structure are interpreted in terms of the Slonczewski-Weiss- McClure band model. Small changes are found relative to the band parameters that describe pristine graphite.

Electronic band structure of a type-II ‘W’ quantum well calculated by an eight-band k · p model

2011 ◽  
Vol 20 (3) ◽  
pp. 030507 ◽  
Author(s):  
Xiu Yu ◽  
Yong-Xian Gu ◽  
Qing Wang ◽  
Xin Wei ◽  
Liang-Hui Chen
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Electronic Band Structure ◽  
Type Ii ◽  
Electronic Band
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