scholarly journals Analysis of Q0-Independent Single-Electron Systems

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 341-344 ◽  
Author(s):  
Konstantin K. Likharev ◽  
Alexander N. Korotkov
Keyword(s):  
Random Distribution ◽  
Capacitive Coupling ◽  
Single Electron ◽  
Electron Systems ◽  
Single Electron Devices ◽  
Electron Devices

The random distribution of the background charges is a serious problem for integrated digital single-electron devices with capacitive coupling. We propose the new principle of operation of the devices which does not suffer from this problem.

Single-electron devices with granulated film cotunneling suppressors

2006 ◽  
Author(s):  
Alexei Orlov ◽  
Xiangning Luo ◽  
Thomas Kosel ◽  
Gregory Snider
Keyword(s):  
Single Electron ◽  
Single Electron Devices ◽  
Electron Devices

Silicon single-electron devices

1999 ◽  
Vol 86 (5) ◽  
pp. 605-639 ◽  
Author(s):  
YASUO TAKAHASHI ◽  
AKIRA FUJIWARA ◽  
MASAO NAGASE ◽  
HIDEO NAMATSU ◽  
KENJI KURIHARA ◽  
...  
Keyword(s):  
Single Electron ◽  
Single Electron Devices ◽  
Electron Devices

Single-electron devices via controlled assembly of designed nanoparticles

1999 ◽  
Vol 47 (1-4) ◽  
pp. 179-183 ◽  
Author(s):  
Tobias Junno ◽  
Martin H. Magnusson ◽  
Sven-Bertil Carlsson ◽  
Knut Deppert ◽  
Jan-Olle Malm ◽  
...  
Keyword(s):  
Single Electron ◽  
Controlled Assembly ◽  
Single Electron Devices ◽  
Electron Devices

scholarly journals Single-electron devices with a mechanical degree of freedom

2012 ◽  
Vol 400 (5) ◽  
pp. 052028
Author(s):  
Yu A Pashkin ◽  
J P Pekola ◽  
D A Knyazev ◽  
T F Li ◽  
S Kafanov ◽  
...  
Keyword(s):  
Degree Of Freedom ◽  
Single Electron ◽  
Single Electron Devices ◽  
Electron Devices

SINGLE ELECTRON DEVICES

1998 ◽  
Vol 09 (01) ◽  
pp. 165-207 ◽  
Author(s):  
DORAN D. SMITH
Keyword(s):  
Tunnel Junctions ◽  
Electron Flow ◽  
Superconducting Devices ◽  
Time Correlation ◽  
Single Electron ◽  
Net Charge ◽  
Flow Through ◽  
Single Electron Devices ◽  
Electron Devices ◽  
Electron Effects

In the mid 1980s Averin and Likharev predicted that with the use of ultrasmall tunnel junctions a time correlation of electron flow through a junction could be observed, and permit the measurement of the effect of a net charge of less than one electron on the junction. Both effects were soon experimentally verified, and since that time there has been an explosion of work in the filed of single electron devices. This chapter reviews the fundamental concepts behind the operation of such devices. it then describes some of the single electron effects studied in semiconductors. Superconducting devices are then constrasted to the semiconductor and the normal metal single electron devices. The details of some current applications are described, and a thumbnail sketch of current fabrication methods is given.

Single electron devices: concept to realization

2020 ◽  
pp. 55-87
Author(s):  
Boddepalli Santhibhushan ◽  
Anurag Srivastava ◽  
Anu ◽  
Mohammad Shahid Khan
Keyword(s):  
Single Electron ◽  
Single Electron Devices ◽  
Electron Devices
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