scholarly journals Numerical Examination of Photon Recycling as an Explanation of Observed Carrier Lifetime in Direct Bandgap Materials

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 153-157 ◽  
Author(s):  
Joseph W. Parks ◽  
Kevin F. Brennan ◽  
Arlynn W. Smith
Keyword(s):  
Carrier Lifetime ◽  
Spatial Location ◽  
Practical Application ◽  
Radiative Recombination Rate ◽  
Carrier Generation ◽  
Spectral Content ◽  
Carrier Lifetimes ◽  
Photon Recycling ◽  
Effective Carrier ◽  
Numerical Examination

Photon recycling is examined as an explanation for the observed large carrier lifetimes in an InP/InGaAs photodiode. This effect extends the effective carrier lifetime within a device by re-absorbing a fraction of the photons generated through radiative band-toband recombination events. In order to predict the behavior of this carrier generation, photon recycling has been added to our two-dimensional macroscopic device simulator, STEBS-2D. A ray-tracing preprocessing step is used to map all of the possible trajectories and absorption of various wavelengths of emitted light from each originating node within the device. The macroscopic simulator uses these data to determine the spatial location of the re-absorbed radiation within the geometry of the device. By incorporating the ray tracer results with the total quantity and spectral content of recombined carriers at each node within the simulation, the recycled generation rate can be obtained. A practical application of this model is presented where the effects of photon recycling are used as a possible explanation of the discrepancy between the theoretically predicted and experimentally observed radiative recombination rate in a double heterostructure photodetector.

Nonequilibrium Carrier Diffusion and Recombination in Heavily-Doped and Semi-Insulating Bulk HTCVD Grown 4H-SiC Crystals

2005 ◽  
Vol 483-485 ◽  
pp. 409-412 ◽  
Author(s):  
L. Storasta ◽  
R. Aleksiejūnas ◽  
M. Sūdžius ◽  
Arunas Kadys ◽  
T. Malinauskas ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Vapour Deposition ◽  
Carrier Lifetime ◽  
Four Wave Mixing ◽  
Wave Mixing ◽  
Interband Transitions ◽  
Carrier Generation ◽  
Carrier Lifetimes ◽  
Two Photon ◽  
Heavily Doped

We applied four-wave mixing (FWM) technique for investigation of high temperaturechemical vapour deposition (HTCVD) grown 4H-SiC samples with different doping levels. The determined minority electron and hole mobilities in heavily doped crystals at doping densities of 1019 cm-3 were found to be equal to 116 and 52 cm2/Vs. In semi-insulating (SI) crystals, the ambipolar diffusion coefficient Da = 2.6 − 3.3 cm2/s and carrier lifetimes of 1.5 – 2.5 ns have been measured. Irradiation of SI crystals by 6 MeV electrons resulted in essential decrease of carrier lifetime down to ~ 100 ps and clearly revealed the defect-assisted carrier generation with respect to two-photon interband transitions before irradiation.

scholarly journals Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlOx for Crystalline Si Passivation

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1803
Author(s):  
Zhen Zheng ◽  
Junyang An ◽  
Ruiling Gong ◽  
Yuheng Zeng ◽  
Jichun Ye ◽  
...  
Keyword(s):  
Structural Changes ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Contact Potential Difference ◽  
Potential Difference ◽  
Kelvin Probe ◽  
Contact Potential ◽  
Carrier Lifetimes ◽  
Transmission Electron ◽  
Effective Carrier

In this work, we report the same trends for the contact potential difference measured by Kelvin probe force microscopy and the effective carrier lifetime on crystalline silicon (c-Si) wafers passivated by AlOx layers of different thicknesses and submitted to annealing under various conditions. The changes in contact potential difference values and in the effective carrier lifetimes of the wafers are discussed in view of structural changes of the c-Si/SiO2/AlOx interface thanks to high resolution transmission electron microscopy. Indeed, we observed the presence of a crystalline silicon oxide interfacial layer in as-deposited (200 °C) AlOx, and a phase transformation from crystalline to amorphous silicon oxide when they were annealed in vacuum at 300 °C.

scholarly journals Origin of long lifetime of band-edge charge carriers in organic–inorganic lead iodide perovskites

2017 ◽  
Vol 114 (29) ◽  
pp. 7519-7524 ◽  
Author(s):  
Tianran Chen ◽  
Wei-Liang Chen ◽  
Benjamin J. Foley ◽  
Jooseop Lee ◽  
Jacob P. C. Ruff ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Lifetime ◽  
Charge Carriers ◽  
Band Edge ◽  
Lead Iodide ◽  
Solar Cell Performance ◽  
Photovoltaic Materials ◽  
Wide Range ◽  
Long Lifetime ◽  
Photon Recycling

Long carrier lifetime is what makes hybrid organic–inorganic perovskites high-performance photovoltaic materials. Several microscopic mechanisms behind the unusually long carrier lifetime have been proposed, such as formation of large polarons, Rashba effect, ferroelectric domains, and photon recycling. Here, we show that the screening of band-edge charge carriers by rotation of organic cation molecules can be a major contribution to the prolonged carrier lifetime. Our results reveal that the band-edge carrier lifetime increases when the system enters from a phase with lower rotational entropy to another phase with higher entropy. These results imply that the recombination of the photoexcited electrons and holes is suppressed by the screening, leading to the formation of polarons and thereby extending the lifetime. Thus, searching for organic–inorganic perovskites with high rotational entropy over a wide range of temperature may be a key to achieve superior solar cell performance.

Improving Sensitivity of p-n Junction Temperature Sensor by Carrier Lifetime Modification

2008 ◽  
Vol 55-57 ◽  
pp. 517-520
Author(s):  
Amporn Poyai ◽  
E. Ratanaudomphisut ◽  
J. Supadech ◽  
N. Klunngien ◽  
C. Hruanan ◽  
...  
Keyword(s):  
Leakage Current ◽  
Temperature Sensor ◽  
Carrier Lifetime ◽  
Reverse Current ◽  
Junction Temperature ◽  
Carrier Generation ◽  
Current Voltage ◽  
Generation Lifetime

This paper presents the relation between the staring cobalt thickness with carrier generation lifetime, which effects to the sensitivity of p-n junction temperature sensor. The starting cobalt thickness of 12, 20 and 30nm have been used. The carrier generation lifetimes have been calculated from the reverse current-voltage (I-V) characteristics. The highest carrier generation lifetime has been obtained in the case of 12nm starting cobalt thickness. The highest sensitivity of p-n junction temperature sensor has also been observed from the case of 12nm starting cobalt thickness. The sensitivity has been calculated from the relation between leakage current versus temperature. The sensitivity of p-n junction temperature sensor can be improved by increasing carrier generation lifetime.

Modeling of Photon Recycling in GaN-Devices

2005 ◽  
Vol 483-485 ◽  
pp. 1039-1042
Author(s):  
Enn Velmre ◽  
Andres Udal ◽  
Mihhail Klopov
Keyword(s):  
Transfer Function ◽  
Radiative Recombination ◽  
Bipolar Transistors ◽  
Recombination Radiation ◽  
Carrier Lifetimes ◽  
Order Of Magnitude ◽  
Photon Recycling ◽  
Radiation Reabsorption ◽  
High Absorption

The strength of recombination radiation reabsorption in GaN is discussed. For material comparisons a distance-dependent radiative recombination transfer function F(u) is introduced. In spite of high absorption rates of GaN, calculations predict ca. one order of magnitude higher photon recycling efficiency in GaN than in GaAs. Simulations of 2H-GaN p −i −n structures predict appearance of S-shaped forward I/V characteristics due to the generation of extra carriers in the base center. The study of GaN bipolar transistors shows that the radiative recombination will reduce the carrier lifetimes in the base and thereby restrict essentially the achievable current gains.

scholarly journals Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Dong-Pyo Han ◽  
Gyeong Won Lee ◽  
Sangjin Min ◽  
Dong-Soo Shin ◽  
Jong-In Shim ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Complex Dynamics ◽  
Physical Factor ◽  
Physical Factors ◽  
Temperature Dependent ◽  
Light Emitting ◽  
Carrier Lifetimes ◽  
Driving Current ◽  
Wide Range ◽  
Thermal Droop

Abstract This study aims to elucidate the carrier dynamics behind thermal droop in GaInN-based blue light-emitting diodes (LEDs) by separating multiple physical factors. To this end, first, we study the differential carrier lifetimes (DCLs) by measuring the impedance of a sample LED under given driving-current conditions over a very wide operating temperature range of 300 K–500 K. The measured DCLs are decoupled into radiative carrier lifetime (τR) and nonradiative carrier lifetime (τNR), via utilization of the experimental DCL data, and then very carefully investigated as a function of driving current over a wide range of operating temperatures. Next, to understand the measurement results of temperature-dependent τR and τNR characteristics, thermodynamic analysis is conducted, which enables to look deeply into the temperature-dependent behavior of the carriers. On the basis of the results, we reveal that thermal droop is originated by the complex dynamics of multiple closely interrelated physical factors instead of a single physical factor. In particular, we discuss the inherent cause of accelerated thermal droop with elevated temperature.

Carrier Lifetimes in 4H-SiC Epitaxial Layers on the C-Face Enhanced by Carbon Implantation

2018 ◽  
Vol 924 ◽  
pp. 432-435 ◽  
Author(s):  
Mitsuhiro Kushibe ◽  
Johji Nishio ◽  
Ryosuke Iijima ◽  
Akira Miyasaka ◽  
Hirokuni Asamizu ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Layer Thickness ◽  
Epitaxial Layer ◽  
Carrier Lifetime ◽  
Epitaxial Layers ◽  
Carrier Lifetimes ◽  
Post Annealing

Carrier lifetime in low carrier concentration 4H-SiC epitaxial layers grown on the C-face was enhanced by using carbon implantation and post annealing. The measured carrier lifetime increased with the thickness of the epitaxial layer and was 11.4 µs for the 150 µm thick epitaxial layer. The internal carrier lifetime was estimated as 21 µs from the dependence of the measured carrier lifetime on the epitaxial layer thickness. This value is almost comparable to the reported values of the internal carrier lifetime for the layers grown on the Si-face.

scholarly journals Light-induced Recovery of Effective Carrier Lifetime in Boron-doped Czochralski Silicon at Room Temperature

2016 ◽  
Vol 92 ◽  
pp. 801-807 ◽  
Author(s):  
Hiroaki Ichikawa ◽  
Isao Takahashi ◽  
Noritaka Usami ◽  
Katsuhiko Shirasawa ◽  
Hidetaka Takato
Keyword(s):  
Room Temperature ◽  
Carrier Lifetime ◽  
Czochralski Silicon ◽  
Boron Doped ◽  
Effective Carrier
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