scholarly journals Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films (ITO: Ge) Obtained at Low Deposition Temperature

1993 ◽  
Vol 15 (2) ◽  
pp. 67-74
Author(s):  
S. J. Wen ◽  
G. Campet ◽  
J. P. Manaud

Undoped and Ge-doped ITO films (ITO: Ge) deposited at low temperature (70℃) have been studied. Although both samples have the same carrier concentration, a higher carrier mobility occurs for ITO: Ge. An evaluation of the relative position of the dopant associated energy states has been carried out.

2011 ◽  
Vol 519 (7) ◽  
pp. 2098-2102 ◽  
Author(s):  
Jin Nyoung Jang ◽  
You Jong Lee ◽  
Jun Young Lee ◽  
Yun Sung Jang ◽  
MunPyo Hong ◽  
...  

2017 ◽  
Vol 621 ◽  
pp. 52-57 ◽  
Author(s):  
Andrej Čampa ◽  
Marko Berginc ◽  
Katarina Vojisavljević ◽  
Barbara Malič ◽  
Peter Panjan ◽  
...  

2002 ◽  
Vol 31 (2) ◽  
pp. 129-135 ◽  
Author(s):  
William J. Lee ◽  
Yean-Kuen Fang ◽  
Jyh-Jier Ho ◽  
Chin-Ying Chen ◽  
Rung-Ywan Tsai ◽  
...  

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