Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films (ITO: Ge) Obtained at Low Deposition Temperature
Keyword(s):
Undoped and Ge-doped ITO films (ITO: Ge) deposited at low temperature (70℃) have been studied. Although both samples have the same carrier concentration, a higher carrier mobility occurs for ITO: Ge. An evaluation of the relative position of the dopant associated energy states has been carried out.
Keyword(s):
2001 ◽
Vol 19
(4)
◽
pp. 1636-1641
◽
Keyword(s):
2002 ◽
Vol 31
(2)
◽
pp. 129-135
◽
Keyword(s):
2019 ◽
Vol 484
◽
pp. 257-264
◽
Keyword(s):
Keyword(s):
2012 ◽
Vol 51
◽
pp. 10NA16
◽
2015 ◽
Vol 44
(11)
◽
pp. 2683-2687
◽
Keyword(s):