scholarly journals High Temperature Oxidized SnO2Films Prepared by Reactive Sputtering

1987 ◽  
Vol 12 (3) ◽  
pp. 191-200 ◽  
Author(s):  
G. Beensh-Marchwicka ◽  
L. Król-Stępniewska ◽  
A. Misiuk
Keyword(s):  
High Temperature ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Tin Oxide ◽  
Argon Atmosphere ◽  
Ion Sputtering ◽  
Temperature Range ◽  
Partial Pressures ◽  
Tin Oxide Films ◽  
Reactive Ion Sputtering

Undoped and Sb-doped tin oxide films were prepared by d.c. reactive ion sputtering in an argon atmosphere with oxygen partial pressures ranging from 0 to 50%. The films were anneled in oxygen in the temperature range 360 - 893℃. The effect of thermal annealing on the changes in electrical and structural properties is described.

scholarly journals High Temperature Conductive Stability of Indium Tin Oxide Films

2020 ◽  
Vol 7 ◽  
Author(s):  
Haiou Li ◽  
Lei Guo ◽  
Xingpeng Liu ◽  
Tangyou Sun ◽  
Qi Li ◽  
...  
Keyword(s):  
High Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Tin Oxide Films

Electrical and structural properties of indium tin oxide films prepared by pulsed laser deposition

2002 ◽  
Vol 91 (3) ◽  
pp. 1213-1218 ◽  
Author(s):  
Hirokazu Izumi ◽  
Frederick O. Adurodija ◽  
Takahiro Kaneyoshi ◽  
Tsuguo Ishihara ◽  
Hideki Yoshioka ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Structural Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Tin Oxide Films

Structural properties of Si nanoclusters produced by thermal annealing of SiOx films

2004 ◽  
Vol 817 ◽  
Author(s):  
Simona Boninelli ◽  
Fabio Iacona ◽  
Corrado Bongiorno ◽  
Corrado Spinella ◽  
Francesco Priolo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Annealing Temperature ◽  
Quantitative Description ◽  
Dark Field ◽  
High Temperature Annealing ◽  
Transmission Electron

AbstractThe structural properties of Si nanoclusters embedded in SiO2, produced by high temperature annealing of SiOx films, have been investigated by energy filtered transmission electron microscopy. The presence of amorphous nanostructures, not detectable by using dark field transmission electron microscopy, has been demonstrated. By taking into account also this contribution, a quantitative description of the evolution of the samples upon thermal annealing has been accomplished. In particular, the nanocluster mean radius and the density of amorphous and crystalline clusters have been determined as a function of the annealing temperature.

Sign in / Sign up

Export Citation Format

Share Document