scholarly journals Effect of V2O5Dopant on the Electrical Conductivity of RuO2Thick Film Resistors

1986 ◽  
Vol 12 (2) ◽  
pp. 111-117 ◽  
Author(s):  
M. S. Setty ◽  
R. F. Shinde
Keyword(s):  
Electrical Conductivity ◽  
Solid State ◽  
Charge Carrier ◽  
Thick Film ◽  
Solid State Reaction ◽  
Dopant Concentration ◽  
Sheet Resistivity ◽  
Conducting Phase ◽  
Extra Charge ◽  
Cationic Site

Thick film glaze resistors have been prepared using V2O5doped RuO2conducting phase. Different amounts of V2O5were incorporated into RuO2lattice by solid state reaction. Sheet resistivity decreased from 235 to 10 kΩ/Sq, with the increase in the dopant concentration from 2 to 6% wt. The conductivity, ‘σ’, was found to fit in the equation σ= KS(l-S), where S is the probability that a given cationic site will contain an extra charge carrier and K = 10-3mho-sq.

Method of High Active Preparation and Electrical Properties of CuFeO2 Delafossite-Type

2014 ◽  
Vol 979 ◽  
pp. 302-306 ◽  
Author(s):  
Chalermpol Rudradawong ◽  
Aree Wichainchai ◽  
Aparporn Sakulkalavek ◽  
Yuttana Hongaromkid ◽  
Chesta Ruttanapun
Keyword(s):  
Crystal Structure ◽  
Electrical Conductivity ◽  
Solid State ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Solid State Reaction ◽  
Solid State Reaction Method ◽  
Lattice Parameter ◽  
Metal Powders ◽  
High Power Factor

In this paper, the CuFeO2compound were prepared by classical solid state reaction (CSSR) and direct powder dissolved solution (DPDS) method from starting material metal oxides and metal powders. Preparation of two methods shows that, direct powder dissolved solution faster recover phases than classical solid state reaction method. The fastest method gets from starting materials Cu and Fe metal powders, the electrical conductivity, Seebeck coefficient, carrier concentration and mobility are 10.68 S/cm, 244.59 μV/K, 12.86×1016cm-3and 494.96 cm2/V.s, respectively. In addition, each CuFeO2compounds were investigated on crystal structure and electrical properties. From XRD and SEM results, all samples have a crystal structure delafossite-typeand a large grain boundary more than 15 μm by electrical conductivity corresponds to grain boundary and lattice parameter: a increases. Within this paper, from above results exhibit that preparation CuFeO2from Cu and Fe by direct powder dissolved solution method most appropriate for thermoelectric oxide materials due to high active for preparation else high lattice strain and high power factor are 0.00052 and 0.64×10-4W/mK2, respectively.

W6+ & Br− codoped Li4Ti5O12 anode with super rate performance for Li-ion batteries

2015 ◽  
Vol 3 (26) ◽  
pp. 13706-13716 ◽  
Author(s):  
Qianyu Zhang ◽  
Huansheng Lu ◽  
Haoxiang Zhong ◽  
Xiaodan Yan ◽  
Chuying Ouyang ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Solid State ◽  
Anode Material ◽  
Solid State Reaction ◽  
Rate Performance ◽  
Li Ion Batteries ◽  
Li Ion ◽  
Li4ti5o12 Anode ◽  
Simple Solid State Reaction

We report a novel Li4Ti5−xWxO12−xBrx (x = 0.025, 0.050 and 0.100) anode material simultaneously doped with W6+ and Br− ions prepared by a simple solid-state reaction in air, aiming to significantly improve electrical conductivity of Li4Ti5O12.

TEXTURED STRUCTURE AND ANISOTROPIC THERMOELECTRIC PROPERTIES OF Ca2.7Bi0.3Co4O9 OXIDE PREPARED BY CONVENTIONAL SOLID-STATE REACTION

2009 ◽  
Vol 23 (01) ◽  
pp. 87-95 ◽  
Author(s):  
HAOSHAN HAO ◽  
QINGLIN HE ◽  
CHANGQING CHEN ◽  
HONGWEI SUN ◽  
XING HU
Keyword(s):  
Electrical Conductivity ◽  
Grain Size ◽  
Solid State ◽  
Seebeck Coefficient ◽  
Power Factor ◽  
Solid State Reaction ◽  
Solid State Reaction Method ◽  
Conventional Solid State Reaction ◽  
Reaction Method ◽  
Bi Doping

Ca 3-x Bi x Co 4 O 9(x = 0.0, 0.3) samples have been prepared at 1223 K by conventional solid-state reaction method. XRD and SEM investigations reveal that c-axis-oriented structure could be formed in Ca 2.7 Bi 0.3 Co 4 O 9 samples, whereas grains in Ca 3 Co 4 O 9 samples distribute randomly. Moreover, Bi doping increases the grain size and relative density of Ca 2.7 Bi 0.3 Co 4 O 9. The electrical conductivity along the ab plane for Ca 2.7 Bi 0.3 Co 4 O 9 is about four times as large as that along the c-axis, but the Seebeck coefficient is almost isotropic, which leads to a remarkable rise of the power factor in ab plane for Ca 2.7 Bi 0.3 Co 4 O 9 compared with untextured Ca 3 Co 4 O 9. The textured structure in Ca 2.7 Bi 0.3 Co 4 O 9 sample should be attributed to the effect of Bi doping.

Thermoelectric Properties of Solid-State Synthesized Magnesium Silicides Doped with Group BI-III Elements

2012 ◽  
Vol 724 ◽  
pp. 385-388 ◽  
Author(s):  
Sin Wook You ◽  
Soon Mok Choi ◽  
Won Seon Seo ◽  
Sun Uk Kim ◽  
Kyung Wook Jang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Solid State ◽  
Mechanical Alloying ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Solid State Reaction ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Group B

Group BI(Cu, Ag)-, BII(Zn)- and BIII(Al, In)-doped Mg2Si compounds were synthesized by solid state reaction and mechanical alloying. Electronic transport properties (Hall coefficient, carrier concentration and mobility) and thermoelectric properties (Seebeck coefficient, electrical conductivity, power factor, thermal conductivity and figure of merit) were examined. Mg2Si powder was synthesized successfully by solid state reaction at 773 K for 6 h and doped by mechanical alloying for 24 h. It was fully consolidated by hot pressing at 1073 K for 1 h. The electrical conductivity increased by doping due to an increase in the carrier concentration. However, the thermal conductivity did not changed significantly by doping, which was due to much larger contribution of the lattice thermal conductivity over the electronic thermal conductivity. Group BIII(Al, In) elements were more effective to enhance the thermoelectric properties of Mg2Si.

A Novel Fast Lithium—Ionic Conductor.

1990 ◽  
Vol 210 ◽  
Author(s):  
L. Moreno-Real ◽  
T. Ramirez-Cardenas ◽  
S. Bruoue ◽  
M. Martinez-Lara ◽  
J.R. Ramosbarrado
Keyword(s):  
Electrical Conductivity ◽  
Solid State ◽  
Solid State Reaction ◽  
Ionic Conductor ◽  
Lithium Content ◽  
Maximum Conductivity ◽  
Lithium Ionic Conductor

AbstractThe lithium derivatives from anhydrous niobium (Y) phosphate were made through NbOPO4.H20 and LiCl by solid state reaction at 200 ºC and subsequentannealed at 500ºC. The solid with the highest lithium content, exhibits the maximum conductivity of all materials prepared. The electrical conductivity of this solid ranges from 10-10 Ω-1 cm-1 at 373K to 3.62.10-3Ω-1cm-1 at 683K.

Comparison of PtSi Films Grown by Solid-State Reaction and by E-Beam Co-Evaporation: Thermal Stability in Air at 1000 °C

MRS Advances ◽  
2016 ◽  
Vol 1 (21) ◽  
pp. 1539-1544
Author(s):  
Robert T. Fryer ◽  
Robert J. Lad
Keyword(s):  
Electrical Conductivity ◽  
Solid State ◽  
Solid State Reaction ◽  
Grain Morphology ◽  
X Ray Diffraction ◽  
Columnar Grain ◽  
Pt Films ◽  
Granular Morphology ◽  
Oxidation Mechanisms

ABSTRACTTwo different methods were used to synthesize 200 nm thick single-phase, orthorhombic-PtSi films: (i) e-beam co-evaporation (EBC) of Pt and Si onto r-sapphire substrates and (ii) solid-state reaction (SSR) of sputtered Pt films on Si (100) wafers. Morphology, electrical conductivity, and crystalline structure were characterized for as-grown films and for films annealed in air at 1000 °C via scanning electron microscopy (SEM), 4-pt conductivity measurements, andin situX-ray diffraction (XRD). As-grown EBC films exhibit columnar grain morphology and slight (101) crystalline texture, while SSR films exhibit granular morphology with many voids and a strong (002) texture. Above 600 °C, EBC PtSi films rapidly oxidize to form crystalline Pt3Si and amorphous SiO2phases. Around 1000 °C, the Pt3Si phase melts and c-Pt grains nucleate. After air annealing for 6 h at 1000 °C, room-temperature XRD shows that the oxidized EBC films consist of Pt3Si and Pt phases within a SiO2matrix and become electrically insulating. SSR films initially form with a (002) o-PtSi orientation and above 900 °C they recrystallize to preferred (101) texture and exhibit an unchanged electrical conductivity and a stable film morphology during 48 h of air annealing at 1000 °C. Separate oxidation mechanisms are proposed for the two film types.

Synthesis, Electrical Conductivity and Electrochemical Properties of SrFe1−xSbxO3−δ as Cathode Materials for IT-SOFCs

2014 ◽  
Vol 672-674 ◽  
pp. 696-699
Author(s):  
Xiu Ling Yu ◽  
Xue Li
Keyword(s):  
Electrical Conductivity ◽  
Fuel Cells ◽  
Solid State ◽  
Solid Oxide Fuel Cells ◽  
Electrochemical Properties ◽  
Cathode Materials ◽  
Solid State Reaction ◽  
Perovskite Oxides ◽  
Solid Oxide ◽  
Oxide Fuel

Fe-based perovskite oxides SrFe1-xSbxO3-δ (SFS, x = 0.05–0.15) have been prepared by a solid-state reaction and studied as novel cathode materials for intermediate temperature solid oxide fuel cells (IT-SOFCs). As SOFC cathodes, the highest electrical conductivity of 100 S cm−1 at 425 oC in air was obtained for the x = 0.05 sample. The area-specific resistances of the SFS ( x = 0.05) cathode on the LSGM electrolyte where at 700 oC is 0.17 Ω cm2. All these results demonstrates that Sb-substituted SFS perovskites materials are promising cheaper alternative cathodes for an IT-SOFC.

scholarly journals Structure and mechanism of electrical conductivity of resistive compositions for thick-film metal-ceramic heating elements

2019 ◽  
pp. 23-28
Author(s):  
Ye.Ya. Telnikov ◽  
O.G. Chernyshyn ◽  
O.M. Nedbailo ◽  
I.O. Khmara
Keyword(s):  
Electrical Conductivity ◽  
Thick Film ◽  
Thermal Inertia ◽  
Aluminoborosilicate Glass ◽  
Conducting Phase ◽  
Resistive Layer ◽  
Technical Problems ◽  
Conductive Phase ◽  
Metal Ceramic ◽  
Metal Borides

The work is devoted to the solution of scientific and technical problems of creating granular resistive thick films used in the manufacture of metal-ceramic heating elements. Using the method of mechanosynthesis, particles of transition metal borides and aluminoborosilicate glass of complex chemical composition were obtained. The electrical and thermal properties of thick-film metal-ceramic heating elements with a resistive layer based on modified particles of a conductive material are studied. The heating elements of the new generation are made by the method of thick-film technology, which is widely used in microelectronics in the manufacture of hybrid electronic circuits. Structurally, the thick-film heater is a base (metal with a dielectric coating, ceramics, glass, glass), which is consistently applied through a mesh stencil resistive paste and a dielectric protective coating. Direct heat transfer from the heating film to the substrate of the heat remover, due to the very low thermal inertia of the design, provides a quick exit of the heating element to the operating temperature. This feature of heaters opens new opportunities for their special use. The resistive layer is a complex heterogeneous disordered system containing regions with a metallic conductivity and dielectric portions. The electrical conductivity in such systems is a superposition of the metallic type — in the conducting phase and the activation phase — through the interlayer between the particles. The layer plays the role of a potential barrier for current carriers and largely determines the predominance of one of the electromigration mechanisms. Its composition and properties are formed during the interaction of molten glass with oxide films of particles of the conductive phase and doping of the compositions. Obtaining composite particles of the conductive phase in the process of preparation and heat treatment of materials allows you to purposefully change the properties of the nanoscale interlayer between these particles, which leads to the possibility of creating a group of materials and heating elements based on them with a complex of new properties.

Study of thermoelectric properties of Ca-doped LaCoO3

2015 ◽  
Vol 29 (06n07) ◽  
pp. 1540026 ◽  
Author(s):  
Kei-Ichiro Murai ◽  
Ken Nagai ◽  
Masaru Takahashi ◽  
Shosuke Takakusa ◽  
Toshihiro Moriga
Keyword(s):  
Electrical Conductivity ◽  
Solid State ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Solid State Reaction ◽  
Room Temperature ◽  
Solid State Reaction Method ◽  
Reaction Method ◽  
Ca Substitution

The samples of La 1-x Ca x CoO 3 (x = 0, 0.05, 0.10, 0.15) were synthesized by solid state reaction method for studying thermoelectric properties. The properties of electrical conductivity and Seebeck coefficient were measured in the temperature ranging from room temperature to 573 K. The results of electrical conductivity was increasing Ca substitution. The highest value of electrical conductivity is 1574 S/cm. It is concluded that Ca 2+ doping in LaCoO 3 has the effect to inhibit Seebeck coefficient from decreasing.

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