Structural analysis of ZnO thin films obtained by d.c. sputtering and electron beam evaporation

2008 ◽  
Vol 23 (S1) ◽  
pp. S91-S93 ◽  
Author(s):  
M. E. L. Sabino ◽  
D. M. Oliveira ◽  
V. D. Falcão ◽  
A. C. Bernardes-Silva ◽  
J. R. T. Branco

ZnO thin films were produced by argon plasma assisted electron beam vacuum evaporation and d.c. magnetron sputtering deposition techniques. ZnO films are used in solar cells as transparent contact in heterojunction cells, and can be deposited on a variety of substrates by different techniques, including electron beam deposition and sputtering and laser ablation. ZnO thin films were prepared for photovoltaic applications and the structural properties were studied. The results showed that the sputtering and the vacuum evaporation techniques resulted, respectively, in a textured ZnO and ZnO plus Zn mixed phases. The annealing of the vacuum evaporation ZnO films resulted in films with high crystallinity.

2015 ◽  
Vol 1107 ◽  
pp. 678-683 ◽  
Author(s):  
Lam Mui Li ◽  
Azmizam Manie Mani ◽  
Saafie Salleh ◽  
Afishah Alias

Zinc Oxide (ZnO) has attracted much attention because of its high optical transmittance approximately ~80 % with a wide band gap of (3.3 eV at 300 K) and a relatively low cost material. ZnO thin films were deposited on plastic substrate using RF powered magnetron sputtering method. The target used is ZnO disk with 99.99 % purity. The sputtering processes are carried out with argon gas that flow from 10-15 sccm. Argon is used to sputter the ZnO target because the ability of argon that can remove ZnO layer effectively by sputtering with argon plasma bombardment. The deposited ZnO thin films are characterized using X-Ray Diffraction (XRD) and UV-Vis Spectrometer. The analysis of X-ray diffraction show that good crystalline quality occurs at nominal thickness of 400 nm. The optical studies showed that all the thin films have high average transmittance of approximately 80 % and the estimated value of optical band gap is within 3.1 eV-3.3 eV range.


2010 ◽  
Vol 19 (2) ◽  
pp. 149-154 ◽  
Author(s):  
V. D. Falcão ◽  
D. O. Miranda ◽  
M. E. L. Sabino ◽  
T. D. O. Moura ◽  
A. S. A. C Diniz ◽  
...  

1999 ◽  
Vol 142 (1-4) ◽  
pp. 233-236 ◽  
Author(s):  
Yoichiro Nakanishi ◽  
Aki Miyake ◽  
Hiroko Kominami ◽  
Toru Aoki ◽  
Yoshinori Hatanaka ◽  
...  

2011 ◽  
Vol 685 ◽  
pp. 6-12 ◽  
Author(s):  
Yu Long Zhang ◽  
Xian Peng Zhang ◽  
Rui Qin Tan ◽  
Ye Yang ◽  
Jun Hua Zhao ◽  
...  

Pristine and Al-doped zinc oxide nanopowders were synthesized via a surfactant-assisted complex sol-gel method, possessing a pure ZnO phase structure and controllable grain size which was characterized by X-ray diffraction and scanning electron microscopy. Using these nanopowders, the pristine and Al-doped ZnO magnetron sputtering targets were prepared following a mold-press, cold isostatical-press and schedule sintering temperature procedure. The relative density of these as-prepared targets was tested by Archimedes’ method on densitometer. All of the results were above 95 theory density percents, and the resistivity was tested on four-probe system at a magnitude of 10-2Ω cm. Related pristine ZnO thin films and Al-doped ZnO thin films were fabricated by magnetron sputtering method, respectively. The pristine and Al-doped ZnO films deposited on the quartz glass by dc sputtering owned a (002) orientation with a thickness of 350 nm at a deposition power of 100 W for two hours under an argon plasma. A good optical transparency above 80% and low resistivity of 1.60×10-3Ω cm were obtained with a deposition temperature of 573 K. The optical energy bandgap could be tailored by Al doping at 4 at.% Al.


2005 ◽  
Vol 36 (8) ◽  
pp. 694-699 ◽  
Author(s):  
R. Al Asmar ◽  
G. Ferblantier ◽  
J.L. Sauvajol ◽  
A. Giani ◽  
A. Khoury ◽  
...  

2018 ◽  
Vol 667 ◽  
pp. 76-87 ◽  
Author(s):  
Magdalena Valentina Lungu ◽  
Arcadie Sobetkii ◽  
Arcadii A. Sobetkii ◽  
Delia Pătroi ◽  
Paula Prioteasa ◽  
...  

2007 ◽  
Vol 1013 ◽  
Author(s):  
Stefan Antohe ◽  
Cezar Tazlaoanu ◽  
Gabriel Socol ◽  
Larisa Magherusan ◽  
Ionut Enculescu ◽  
...  

AbstractStructural, electrical and optical characterizations of nanostructured ZnO thin films used as photosensitized electrodes in photovoltaic cells applications are reported. Nanostructured ZnO thin films were deposited on optical glass substrates by pulsed-laser deposition (PLD), their structure and morphology being optimized for photovoltaic applications. Structural analysis of the samples by X-ray diffraction revealed that the films consist of a hexagonal-close-packed wurtzite type phase ZnO, (001) preferentially oriented in the growth direction. The ZnO films are highly transparent in visible region of solar spectrum, and exhibit electrical resistivities in the range 10-4 - 10-2Ω.m


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