Influence of growth interruption on the formation of solid-state interfaces

2006 ◽  
Vol 21 (2) ◽  
pp. 122-124
Author(s):  
I. Busch ◽  
J. Stümpel ◽  
M. Krumrey
Keyword(s):  
Solid State ◽  
Molecular Beam Epitaxy ◽  
Correlation Length ◽  
Molecular Beam ◽  
Morphological Properties ◽  
X Ray ◽  
X Ray Scattering ◽  
Growth Interruption ◽  
Vertical Correlation ◽  
Ray Scattering

In this study, the effects of growth interruptions on the formation of the interfaces in GaAs∕AlAs multilayers are investigated. For that purpose, a series of different samples has been manufactured with molecular-beam epitaxy. The introduction of growth interruptions of 50 s after the deposition of the layer leads to a change in the morphological properties of the interfaces, in particular their correlation length. These modifications due to the growth interrupt are analyzed with diffuse X-ray scattering. As a result of the measurements, an extension of the lateral correlation length can be proved. By contrast, the vertical correlation of the interfaces is not affected.

Real-Time X-Ray Scattering Study of Surface Dynamics on Au(111) During Ar+ Ion Irradiation

1998 ◽  
Vol 528 ◽  
Author(s):  
M.V. Ramana Murty ◽  
T. Curcic ◽  
A. Judy ◽  
B.H. Cooper ◽  
A.R. Woll ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Irradiation ◽  
Three Dimensional ◽  
Layer By Layer ◽  
Surface Dynamics ◽  
Surface Evolution ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

AbstractX-ray scattering is used to investigate the surface dynamics on Au(111) during Ar+ ion irradiation. During 500 eV Ar+ ion irradiation, we observe the three regimes of step retraction, quasi-layer-by-layer removal and three dimensional rough erosion, analagous to molecular beam epitaxy. The quasi-layer-by-layer sputtering regime has been studied to identify similarities and differences in surface evolution during ion irradiation and molecular beam epitaxy. X-ray measurements suggest that 500 eV Ar+ ion irradiation does not lead to stable adatom island formation. Also, in contrast to molecular beam epitaxy, adatom detachment and diffusion seems important in describing the surface kinetics during ion irradiation.

Structural and morphological characterization of molecular beam epitaxy grown Si/Ge multilayer using x-ray scattering techniques

2011 ◽  
Vol 110 (10) ◽  
pp. 102204 ◽  
Author(s):  
M. Sharma ◽  
M. K. Sanyal ◽  
M. K. Mukhopadhyay ◽  
M. K. Bera ◽  
B. Saha ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Morphological Characterization ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

Integration method for directly analyzing interface statistics of periodic multilayers from X-ray scattering

2013 ◽  
Vol 21 (1) ◽  
pp. 97-103 ◽  
Author(s):  
Haochuan Li ◽  
Jingtao Zhu ◽  
Zhanshan Wang ◽  
Hong Chen ◽  
Yuzhu Wang ◽  
...  
Keyword(s):  
Growth Model ◽  
Correlation Length ◽  
Integration Method ◽  
Average Power ◽  
Growth Exponent ◽  
X Ray ◽  
Single Interface ◽  
X Ray Scattering ◽  
Vertical Correlation ◽  
Ray Scattering

An integration method is demonstrated for directly determining the average interface statistics of periodic multilayers from the X-ray scattering diagram. By measuring the X-ray scattering diagram in the out-of-plane geometry and integrating the scattered intensity along the vertical momentum transferqzin an interval, which is decided by the thickness ratio Γ (ratio of sublayer's thickness to periodic thickness), the cross-correlations between different interfaces are canceled and only the autocorrelations are reserved. Then the multilayer can be treated as a `single interface' and the average power spectral density can be obtained without assuming any vertical correlation model. This method has been employed to study the interface morphology of sputter-deposited W/Si multilayers grown at an Ar pressure of 1–7 mTorr. The results show an increase in vertical correlation length and a decrease in lateral correlation length with increased Ar pressure. The static roughness exponent α = 0 and dynamic growth exponentz= 2 indicate the Edwards–Wilkinson growth model at an Ar pressure of 1–5 mTorr. At an Ar pressure of 7 mTorr, α = 0.35 andz= 1.65 indicate the Kardar–Parisi–Zhang growth model.

Depth-Sensitive X-Ray Scattering Topographic Observation of InAs Grown by Molecular Beam Epitaxy on GaAs

1996 ◽  
Vol 35 (Part 2, No. 10A) ◽  
pp. L1311-L1313
Author(s):  
Yoshifumi Suzuki ◽  
Yoshinori Chikaura ◽  
Hideki Kii
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

On the X-ray Scattering Factor of Metallic Lithium in the Long-Wavelength Limit: The "Solid State Effect"

1980 ◽  
Vol 35 (4) ◽  
pp. 373-377 ◽  
Author(s):  
E. G. Visser ◽  
W. Geertsma ◽  
W. van der Lugt ◽  
J. Th. M. de Hosson
Keyword(s):  
Solid State ◽  
Successive Approximations ◽  
X Ray ◽  
Long Wavelength ◽  
X Ray Scattering ◽  
State Effect ◽  
Metallic Lithium ◽  
Scattering Factor ◽  
Electron Wavefunction ◽  
Ray Scattering

Abstract By considering three successive approximations to the conduction-electron wavefunction of metallic lithium, it is shown that the X-ray scattering factor at small wavevectors is very sensitive to the model chosen for describing the electron density. It is demonstrated that, when screened pseudopotentials are used, the "solid state effect" is almost negligible in this region of wave-vectors.

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