C-7 A New Ultra Fast and Low Noise X-ray Detector System—Invited

2004 ◽  
Vol 19 (2) ◽  
pp. 197-197
Author(s):  
K. Omote ◽  
A. Tsukiyama ◽  
M. Kuraibayashi ◽  
T. Saito
Keyword(s):  
1999 ◽  
Vol 46 (4) ◽  
pp. 886-889 ◽  
Author(s):  
B.A. Ludewigt ◽  
B. Krieger ◽  
D. Lindstrom ◽  
M.R. Maier ◽  
M. Rutgersson ◽  
...  

1994 ◽  
Vol 41 (4) ◽  
pp. 1037-1041 ◽  
Author(s):  
B. Ludewigt ◽  
J. Jaklevic ◽  
I. Kipnis ◽  
C. Rossington ◽  
H. Spieler

1998 ◽  
Vol 4 (6) ◽  
pp. 622-631 ◽  
Author(s):  
L. Strüder ◽  
N. Meidinger ◽  
D. Stotter ◽  
J. Kemmer ◽  
P. Lechner ◽  
...  

Originally designed as position-sensitive detectors for particle tracking, silicon drift detectors (SDDs) are now used for high-count rate X-ray spectroscopy, operating close to room temperature. Their low-capacitance read-node concept places them among the fastest high-resolution detector systems. They have been used in a new spectrum of experiments in the wide field of X-ray spectroscopy: fluorescent analysis, diffrac-tometry, materials analysis, and synchrotron experiments such as X-ray holography and element imaging in scanning electron microscopes. The fact that the detector system can be used at room temperature with good spectroscopic performance and at −10°C with excellent energy resolution, avoiding liquid nitrogen for cooling and high-quality vacuum, guarantees a large variety of new applications, independent of the laboratory environment. A brief description of the device principles is followed by basics on low noise amplification. The performance results of a complete detector system are presented as well as some dedicated applications already realized, including use in a surface mapping instrument and use of a “mini-spectrometer” for the analysis of works of art. Fully depleted pn-charge-coupled devices (pn-CCDs) have been fabricated for the European X-ray Multi-Mirror mission (XMM) and the German X-ray satellite ABRIXAS, enabling high-speed, low-noise, position-resolving X-ray spectroscopy. The detector was designed and fabricated with a homogeneously sensitive area of 36 cm2. At −70°C it has a noise of 4 e- rms, with a readout time of the total focal plane array of 4 msec. The maximum count rate for single photon counting was 105 cps under flat field conditions. In the integration mode, more than 109 cps can be detected at 6 keV. Its position resolution is on the order of 100 μm. The quantum efficiency is higher than 90%, ranging from carbon K X-rays (277 eV) up to 10 keV.


Sensors ◽  
2021 ◽  
Vol 21 (4) ◽  
pp. 1550
Author(s):  
Dominic Greiffenberg ◽  
Marie Andrä ◽  
Rebecca Barten ◽  
Anna Bergamaschi ◽  
Martin Brückner ◽  
...  

Chromium compensated GaAs or GaAs:Cr sensors provided by the Tomsk State University (Russia) were characterized using the low noise, charge integrating readout chip JUNGFRAU with a pixel pitch of 75 × 75 µm2 regarding its application as an X-ray detector at synchrotrons sources or FELs. Sensor properties such as dark current, resistivity, noise performance, spectral resolution capability and charge transport properties were measured and compared with results from a previous batch of GaAs:Cr sensors which were produced from wafers obtained from a different supplier. The properties of the sample from the later batch of sensors from 2017 show a resistivity of 1.69 × 109 Ω/cm, which is 47% higher compared to the previous batch from 2016. Moreover, its noise performance is 14% lower with a value of (101.65 ± 0.04) e− ENC and the resolution of a monochromatic 60 keV photo peak is significantly improved by 38% to a FWHM of 4.3%. Likely, this is due to improvements in charge collection, lower noise, and more homogeneous effective pixel size. In a previous work, a hole lifetime of 1.4 ns for GaAs:Cr sensors was determined for the sensors of the 2016 sensor batch, explaining the so-called “crater effect” which describes the occurrence of negative signals in the pixels around a pixel with a photon hit due to the missing hole contribution to the overall signal causing an incomplete signal induction. In this publication, the “crater effect” is further elaborated by measuring GaAs:Cr sensors using the sensors from 2017. The hole lifetime of these sensors was 2.5 ns. A focused photon beam was used to illuminate well defined positions along the pixels in order to corroborate the findings from the previous work and to further characterize the consequences of the “crater effect” on the detector operation.


IEEE Access ◽  
2021 ◽  
Vol 9 ◽  
pp. 49912-49919
Author(s):  
Sandun Jayarathna ◽  
Md Foiez Ahmed ◽  
Liam O'ryan ◽  
Hem Moktan ◽  
Yonggang Cui ◽  
...  

2008 ◽  
Vol 55 (3) ◽  
pp. 827-832 ◽  
Author(s):  
Jennifer A. Griffiths ◽  
Marinos G. Metaxas ◽  
Gary J. Royle ◽  
Cristian Venanzi ◽  
Colin Esbrand ◽  
...  
Keyword(s):  

1999 ◽  
Author(s):  
Tom J. C. Bruijns ◽  
Robert F. Bury ◽  
Falko Busse ◽  
Andrew G. Davies ◽  
Arnold R. Cowen ◽  
...  

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