Possible Use of Yttria-Stabilized Zirconia for Potentiometric Sensors at Room Temperature

2016 ◽  
Keyword(s):  
Room Temperature ◽  
Yttria Stabilized Zirconia ◽  
Potentiometric Sensors ◽  
Stabilized Zirconia

Off-Axis Growth of Y1Ba2Cu3O7-y on Different Substrates

1992 ◽  
Vol 275 ◽  
Author(s):  
P. R. Broussard ◽  
V. C. Cestone ◽  
Laura H. Allen ◽  
M. E. Reeves
Keyword(s):  
Room Temperature ◽  
Yttria Stabilized Zirconia ◽  
Superconducting Properties ◽  
Stabilized Zirconia ◽  
Dc Sputtering ◽  
Sputtering Pressure

ABSTRACTFilms of Y1Ba2Cu3O7-y have been grown by off-axis DC sputtering onto substrates of (100) SrTiO3. LaAlO, LaGaO3, Yttria-stabilized Zirconia, and MgO. Our best films, grown on SrTiO3 substrates at a temperature of 650°C and a sputtering pressure of 100 mTorr (consisting of 80 mTorr Ar and 20 mTorr O2) have room temperature resistivities of 280 μΩ-cm, an inductive Tcof 88 K and an inductive Jc 'Sof∼ 2.6 × 106 A/cm2 at 77 K and 3.9 × 107 A/cm2at 4.2 K. Films grown on YSZ tend to have higher resistivities (∼ 600 μΩ-cm) but still have Tc's of 86 K and Jc's of - 106 A/cm2 at 77 K. Films down to 550 Å still have Tc's of 86 K and Jc's at 77 K > 106 A/cm2. Films grown at lower temperatures (600°C) on S1TiO3 begin to show a-axis growth, but the superconducting properties deteriorate.

Size-induced room temperature softening of nanocrystalline yttria stabilized zirconia

2020 ◽  
Vol 40 (5) ◽  
pp. 2050-2055 ◽  
Author(s):  
Lin Feng ◽  
Arseniy Bokov ◽  
Shen J. Dillon ◽  
Ricardo H.R. Castro
Keyword(s):  
Room Temperature ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia

Phase instability in ZrO2–NiAl functionally graded materials

1997 ◽  
Vol 12 (10) ◽  
pp. 2589-2593 ◽  
Author(s):  
Yi-Rong He ◽  
Vidya Subramanian ◽  
John J. Lannutti
Keyword(s):  
Residual Stress ◽  
Functionally Graded Materials ◽  
Tetragonal Phase ◽  
Room Temperature ◽  
Functionally Graded ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Graded Materials ◽  
Temperature Transformation ◽  
Phase Retention

Sedimentation in organic solvents was followed by hot-pressing to produce 2 mole % yttria stabilized zirconia-NiAl functionally graded materials (FGM's). These FGM's were better able to accommodate high levels of residual stress than alumina-NiAl FGM's; this is possibly due to enhanced tetragonal phase retention. However, we found that the zirconia layer in these FGM's subsequently experiences room temperature transformation of t-ZrO2 to m-ZrO2.

Performance of Atomic-Layer-Deposited Yttria-Stabilized Zirconia Near Room Temperature

2013 ◽  
Vol 57 (1) ◽  
pp. 1103-1106
Author(s):  
D. Y. Jang ◽  
H. Kim ◽  
K. Bae ◽  
M. V. F. Schlupp ◽  
M. Prestat ◽  
...  
Keyword(s):  
Room Temperature ◽  
Atomic Layer ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia

High Electron Mobility W-doped In2O3 Thin Films

2005 ◽  
Vol 905 ◽  
Author(s):  
Paul F. Newhouse ◽  
Cheol-Hee Park ◽  
Douglas A. Keszler ◽  
Janet Tate ◽  
Peter S. Nyholm
Keyword(s):  
Thin Films ◽  
Electron Mobility ◽  
Room Temperature ◽  
Dopant Concentration ◽  
Pulsed Laser ◽  
Yttria Stabilized Zirconia ◽  
Laser Deposition ◽  
High Electron ◽  
Stabilized Zirconia ◽  
High Electron Mobility

AbstractHigh electron mobility thin films of In2−xWxO3+d (0 ≤ × ≤ 0.075) were prepared by pulsed laser deposition. The highest mobility polycrystalline and textured films show mobility >110 cm2/Vs on both amorphous SiO2 and single crystal yttria-stabilized zirconia substrates. The carrier density is in the range 1−3 × 1020 cm−3 at room temperature. The W dopant concentration for films with optimized electrical properties was x ∼ 0.03.

Room-temperature protonic conduction in nanocrystalline films of yttria-stabilized zirconia

2010 ◽  
Vol 20 (30) ◽  
pp. 6235 ◽  
Author(s):  
Hugo J. Avila-Paredes ◽  
Enrique Barrera-Calva ◽  
Harlan U. Anderson ◽  
Roger A. De Souza ◽  
Manfred Martin ◽  
...  
Keyword(s):  
Room Temperature ◽  
Yttria Stabilized Zirconia ◽  
Nanocrystalline Films ◽  
Stabilized Zirconia ◽  
Protonic Conduction

Interactions of oxygen with yttria-stabilized zirconia at room temperature

Ionics ◽  
2001 ◽  
Vol 7 (4-6) ◽  
pp. 332-338 ◽  
Author(s):  
T. Bak ◽  
M. Rekas ◽  
J. Nowotny ◽  
C. C. Sorrell ◽  
A. Adamski ◽  
...  
Keyword(s):  
Room Temperature ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia

Room-Temperature Electrical-Field Induced Oxygen Diffusion of Aluminum/Yttria-Stabilized Zirconia Thin Film Grown on Si Substrate

2006 ◽  
Vol 45 (11) ◽  
pp. 8827-8831 ◽  
Author(s):  
Naoki Wakiya ◽  
Naoya Tajiri ◽  
Takanori Kiguchi ◽  
Nobuyasu Mizutani ◽  
Jeffrey S. Cross ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Diffusion ◽  
Room Temperature ◽  
Yttria Stabilized Zirconia ◽  
Si Substrate ◽  
Stabilized Zirconia ◽  
Electrical Field ◽  
Zirconia Thin Film

scholarly journals Effect of zirconia in the density and ionic conductivity properties of Bi4V1.8Cu0.1Zn0.1O10.7 compound

2015 ◽  
Vol 13 (1) ◽  
pp. 27
Author(s):  
AB Silva ◽  
Jorge-E Rueda-P ◽  
Q Gomes K
Keyword(s):  
Ionic Conductivity ◽  
Solid Electrolytes ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Pressure Sensors ◽  
Yttria Stabilized Zirconia ◽  
Partial Substitution ◽  
Densification Process ◽  
Stabilized Zirconia ◽  
Oxygen Ions

Ceramics based bismuth vanadate are conductors of oxygen ions and they are used as solid electrolytes in pressure sensors and fuel cells. These materials operate at temperatures above 700 °C. At high temperatures, the bismuth-vanadium oxide (Bi4V2O11) has a g-phase with a large number of oxygen vacancies that favors the ionic conductivity. The g-phase of the Bi4V2O11 was stabilized at room temperature by partial substitution of vanadium (V5+) ions by cuprum (Cu2+) and zinc (Zn2+) ions to provide high ionic conductivity values between 100 and 400oC. Thus, polycrystalline samples of Bi4V1.8Cu0.1Zn0.1O10.7 were obtained after 4h sintering at 800 °C. Investigations were made about densification process and ionic conductivity related to the effect of addition of the yttria-stabilized zirconia (Zr0.88Y0.12O1.94).

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