scholarly journals Thermal Stability of Tungsten-Based Schottky Contacts to N-Type ZnO

2005 ◽  
Keyword(s):  
Thermal Stability ◽  
Schottky Contacts ◽  
Thermal Stability Of

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal Stability of Pd Schottky Contacts to p-Type 6H-SiC

2003 ◽  
Vol 433-436 ◽  
pp. 681-684 ◽  
Author(s):  
M.E. Samiji ◽  
A.M. Venter ◽  
A.W.R. Leitch
Keyword(s):  
Thermal Stability ◽  
Schottky Contacts ◽  
P Type ◽  
Thermal Stability Of

Thermal stability of TaN Schottky contacts on n-GaN

2003 ◽  
Vol 51 (3) ◽  
pp. 653-663 ◽  
Author(s):  
J.R Hayes ◽  
D-W Kim ◽  
H Meidia ◽  
S Mahajan
Keyword(s):  
Thermal Stability ◽  
Schottky Contacts ◽  
Thermal Stability Of

Thermal stability of Schottky contacts on strained AlGaN/GaN heterostructures

2004 ◽  
Vol 84 (9) ◽  
pp. 1585-1587 ◽  
Author(s):  
Zhaojun Lin ◽  
Hyeongnam Kim ◽  
Jaesun Lee ◽  
Wu Lu
Keyword(s):  
Thermal Stability ◽  
Schottky Contacts ◽  
Thermal Stability Of

Thermal stability of Re Schottky contacts to 6H-SiC

2000 ◽  
Vol 21 (12) ◽  
pp. 581-583 ◽  
Author(s):  
I. Shalish ◽  
Y. Shapira
Keyword(s):  
Thermal Stability ◽  
Schottky Contacts ◽  
Thermal Stability Of

Thermal stability of Ru, Pd and Al Schottky contacts top-type 6H-SiC

2004 ◽  
Vol 1 (9) ◽  
pp. 2264-2268 ◽  
Author(s):  
A. Venter ◽  
M. E. Samiji ◽  
A. W. R. Leitch
Keyword(s):  
Thermal Stability ◽  
Schottky Contacts ◽  
Thermal Stability Of
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