Application of Impedance Spectroscopy and Surface Analysis to Obtain Oxide Film Thickness

2017 ◽  
Vol 164 (9) ◽  
pp. C563-C573 ◽  
Author(s):  
Yu-Min Chen ◽  
Nicholas G. Rudawski ◽  
Eric Lambers ◽  
Mark E. Orazem
Keyword(s):  
Impedance Spectroscopy ◽  
Oxide Film ◽  
Film Thickness ◽  
Surface Analysis ◽  
Oxide Film Thickness

scholarly journals Applications of Nuclear Techniques, Computer Simulation and Microscopy to Surface Analysis of Materials

2013 ◽  
Vol 19 (S4) ◽  
pp. 133-134 ◽  
Author(s):  
J. Pacheco de Carvalho ◽  
C.F.R. Pacheco ◽  
A.D. Reis
Keyword(s):  
Elastic Scattering ◽  
Oxide Film ◽  
Film Thickness ◽  
Surface Analysis ◽  
Concentration Profile ◽  
Nuclear Reactions ◽  
Ammonium Citrate ◽  
Oxide Film Thickness ◽  
Nuclear Techniques ◽  
Sem And Tem

There is a wide range of surface analysis techniques which are, generally, complementary. Nuclear and non-nuclear techniques have been available. Nuclear techniques, which are non-destructive, provide for analysis over a few microns close to the surface of the sample, giving absolute values of concentrations of isotopes and elements. They have been applied in areas such as scientific, technologic, industry, arts and medicine, using MeV ion beams. Nuclear reactions permit tracing of isotopes with high sensitivities. We use ion-ion nuclear reactions, elastic scattering and the energy analysis method where, at a chosen energy of the incident ion beam, an energy spectrum is recorded of ions from nuclear events, coming from several depths in the target. Such spectra are computationally predicted, giving target composition and concentration profile information. A computer program has been developed in this context, mainly for flat targets. The non-flat target situation arises as an extension. Successful applications of the method are given using the 18O(p,α0)15N reaction and elastic scattering of (4He)+ ions. SEM and TEM are used as useful complementary techniques.Two types of samples were prepared containing thick and thin oxides, respectively. The first sample (S1) was obtained by high temperature oxidation of austenitic steel in C 18O2 gas. Weight gain measurements had given a 4.2 μm thick oxide. SEM has shown a reasonably flat oxide (Figure 1 (a)). The second sample (S2, also labelled Al/Al2O3) was obtained by anodization of high purity aluminium at 100V in an aqueous solution of ammonium citrate. An oxide thickness of 0.1370 μm was expected. TEM has given an oxide film thickness of 0.1340 μm (Figure 1 (b)). The 18O(p,α0)15N reaction at Ep=1.78 MeV and 165º was used to analyse sample S1. Figure 2 (a) shows a good computed fit to data. A 18O step concentration profile was found, corresponding to a thick 18O oxide with thickness X1=4.4 μm. Sample S2 was analysed by elastic scattering of α particles at Eα=2.0 MeV and 165º. Figure 2 (b) shows a good computed fit to data. A thin oxide film thickness of X1=0.1350 μm was found, close to the TEM value. The fit also shows a ratio of atomic densities of O and Al slightly above 1.5. The combined use of nuclear techniques, SEM and TEM microscopy has proved to be very important for surface analysis of materials. The reported results would be difficult to obtain by other techniques.Supports from University of Beira Interior and FCT (Fundação para a Ciência e a Tecnologia)/PEst-OE/FIS/UI0524/2011 (Projecto Estratégico-UI524-2011-2012) are acknowledged.

scholarly journals Photoluminescence of ion-synthesized 9R-Si inclusions in SiO2/Si structure: Effect of irradiation dose and oxide film thickness

2021 ◽  
Vol 118 (21) ◽  
pp. 212101
Author(s):  
Alena Nikolskaya ◽  
Alexey Belov ◽  
Alexey Mikhaylov ◽  
Anton Konakov ◽  
David Tetelbaum ◽  
...  
Keyword(s):  
Oxide Film ◽  
Film Thickness ◽  
Irradiation Dose ◽  
Structure Effect ◽  
Oxide Film Thickness

Residual Stress Measurement in Silicon Substrate After Local Thermal Oxidation Using Microscopic Raman Spectroscopy

1991 ◽  
Vol 226 ◽  
Author(s):  
Hideo Miura ◽  
Hiroshi Sakata ◽  
Shinji Sakata Merl
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Tensile Stress ◽  
Oxide Film ◽  
Film Thickness ◽  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Silicon Substrate ◽  
Nitride Film ◽  
Oxide Film Thickness

AbstractThe residual stress in silicon substrates after local thermal oxidation is discussed experimentally using microscopic Raman spectroscopy. The stress distribution in the silicon substrate is determined by three main factors: volume expansion of newly grown silicon–dioxide, deflection of the silicon–nitride film used as an oxidation barrier, and mismatch in thermal expansion coefficients between silicon and silicon dioxide.Tensile stress increases with the increase of oxide film thickness near the surface of the silicon substrate under the oxide film without nitride film on it. The tensile stress is sometimes more than 100 MPa. On the other hand, a complicated stress change is observed near the surface of the silicon substrate under the nitride film. The tensile stress increases initially, as it does in the area without nitride film on it. However, it decreases with the increase of oxide film thickness, then the compressive stress increases in the area up to 170 MPa. This stress change is explained by considering the drastic structural change of the oxide film under the nitride film edge during oxidation.

scholarly journals Effect of Silver Oxide Film Thickness on Some Optical Parameter

2014 ◽  
Vol 11 (2) ◽  
pp. 690-694
Author(s):  
Baghdad Science Journal
Keyword(s):  
Dielectric Constant ◽  
Refractive Index ◽  
Oxide Film ◽  
Film Thickness ◽  
Silver Oxide ◽  
Optical Parameter ◽  
Oxide Film Thickness ◽  
Chemical Spray ◽  
Transmission And Absorption ◽  
Different Thickness

Films of silver oxide of different thickness have been prepared by the chemical spray paralysis. Transmission and absorption spectra have recorded in order to study the effect of increasing thickness on some optical parameter such as reflectance, refractive index , and dielectric constant in its two parts . This study reveals that all these paramters affect by increasing the thickness .

Detection of Interfaces States Correlated with Layer-by-Layer Oxidation on Si(100)

1999 ◽  
Vol 592 ◽  
Author(s):  
T. Hattori ◽  
H. Nohira ◽  
Y Teramoto ◽  
N. Watanabe
Keyword(s):  
Surface Roughness ◽  
Oxide Film ◽  
Film Thickness ◽  
Interface State ◽  
State Density ◽  
Layer By Layer ◽  
Oxide Film Thickness ◽  
Maximum Value ◽  
State Densities ◽  
Atomically Flat

ABSTRACTThe interface state densities near the midgap were measured with the progress of oxidation of atomically flat Si(100) surface. It was found that the interface state distribution in Si bandgap changes periodically with the progress of oxidation. Namely, the interface-state density near the midgap of Si exhibits drastic decrease at oxide film thickness where the surface roughness of oxide film takes its minimum value, while that does not exhibit decrease at the oxide film thickness where the surface roughness takes its maximum value. In order to minimize interface state densities the oxide film thickness should be precisely controlled to within an accuracy of 0.02 nm.

Preliminary XPS Spectroscopic Characterization of Autoclaved TiNi Shape Memory Alloys for Implants

1993 ◽  
Vol 331 ◽  
Author(s):  
Svetlana A. Shabalovskaya ◽  
J. W. Anderegg ◽  
R. L. C. Sachdeva ◽  
B. N. Harmon
Keyword(s):  
Oxide Film ◽  
Film Thickness ◽  
Shape Memory ◽  
Surface State ◽  
Chemical Etching ◽  
Surface Preparation ◽  
Spectroscopic Characterization ◽  
Water Steam ◽  
Oxide Film Thickness

AbstractThis paper reports a preliminary spectroscopic characterization of the surface elemental and phase compositions of Ti49Ni51 alloy treated using various sterilization procedures (autoclaving in water, steam, sealed envelopes; boiling in water and chemical etching). The surface of TiNi is found to consist of a thin oxide covered by a carbon-dominated contamination layer. The surface oxide of autoclaved samples is (TiO2)xNiy where y varies in the range 0-6 at.% depending on the surface preparation procedure. Minor amounts of suboxides as well as metallic Ni are also detected. Preliminary estimations of the oxide film thickness showed that it varies in the range 7- 26 nm depending on the employed method of sterilization. Mechanisms of surface state formation are briefly discussed.

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