Electrodeposition of a Functional Solid State Memory Material: Germanium Antimony Telluride from a Non-Aqueous Plating Bath

2018 ◽  
Vol 165 (11) ◽  
pp. D557-D567 ◽  
Author(s):  
Gabriela P. Kissling ◽  
Ruomeng Huang ◽  
Andrew Jolleys ◽  
Sophie L. Benjamin ◽  
Andrew L. Hector ◽  
...  
Keyword(s):  
Solid State ◽  
Antimony Telluride ◽  
Plating Bath ◽  
Memory Material ◽  
Germanium Antimony Telluride

Enhanced thermoelectric performance of GeTe-rich germanium antimony tellurides through the control of composition and structure

CrystEngComm ◽  
2015 ◽  
Vol 17 (18) ◽  
pp. 3440-3445 ◽  
Author(s):  
Raman Sankar ◽  
Deniz P. Wong ◽  
Chiao-Song Chi ◽  
Wei-Lun Chien ◽  
Jih-Shang Hwang ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thermoelectric Performance ◽  
Antimony Telluride ◽  
Composition And Structure ◽  
Germanium Antimony Telluride ◽  
Subsequent Quenching

Enhancement of the thermoelectric performance of GeTe-rich germanium antimony telluride (GeSbTe or GST) is demonstrated through marginal changes in composition and subsequent quenching of crystal structure.

Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

Science ◽  
2017 ◽  
Vol 358 (6369) ◽  
pp. 1423-1427 ◽  
Author(s):  
Feng Rao ◽  
Keyuan Ding ◽  
Yuxing Zhou ◽  
Yonghui Zheng ◽  
Mengjiao Xia ◽  
...  
Keyword(s):  
High Speed ◽  
Amorphous State ◽  
Random Access ◽  
Crystal Nucleation ◽  
Antimony Telluride ◽  
Computing Systems ◽  
Operation Speed ◽  
Speed Up ◽  
Germanium Antimony Telluride ◽  
Working Efficiency

Operation speed is a key challenge in phase-change random-access memory (PCRAM) technology, especially for achieving subnanosecond high-speed cache memory. Commercialized PCRAM products are limited by the tens of nanoseconds writing speed, originating from the stochastic crystal nucleation during the crystallization of amorphous germanium antimony telluride(Ge2Sb2Te5). Here, we demonstrate an alloying strategy to speed up the crystallization kinetics. The scandium antimony telluride (Sc0.2Sb2Te3) compound that we designed allows a writing speed of only 700 picoseconds without preprogramming in a large conventional PCRAM device. This ultrafast crystallization stems from the reduced stochasticity of nucleation through geometrically matched and robust scandium telluride (ScTe) chemical bonds that stabilize crystal precursors in the amorphous state. Controlling nucleation through alloy design paves the way for the development of cache-type PCRAM technology to boost the working efficiency of computing systems.

Molecular Precursors for the Phase-Change Material Germanium-Antimony-Telluride, Ge2Sb2Te5(GST)

2017 ◽  
Vol 643 (18) ◽  
pp. 1150-1166 ◽  
Author(s):  
Nicole Harmgarth ◽  
Florian Zörner ◽  
Phil Liebing ◽  
Edmund P. Burte ◽  
Mindaugas Silinskas ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Antimony Telluride ◽  
Molecular Precursors ◽  
Germanium Antimony Telluride ◽  
Change Material

Active all-dielectric bifocal metalens assisted by germanium antimony telluride

2019 ◽  
Vol 52 (9) ◽  
pp. 095106 ◽  
Author(s):  
Shiyu Li ◽  
Chaobiao Zhou ◽  
Guoxun Ban ◽  
Hong Wang ◽  
Hong Lu ◽  
...  
Keyword(s):  
Antimony Telluride ◽  
Germanium Antimony Telluride
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