Atomic Layer Deposition of Aluminum Oxide for Surface Passivation of InGaAs∕InP Heterojunction Bipolar Transistors

2011 ◽  
Vol 158 (12) ◽  
pp. H1279 ◽  
Author(s):  
R. Driad ◽  
F. Benkhelifa ◽  
L. Kirste ◽  
M. Mikulla ◽  
O. Ambacher
Author(s):  
Sungho Park ◽  
Byung Jun Kim ◽  
Tae Yeon Kim ◽  
Eui Young Jung ◽  
Kyu-Myung Lee ◽  
...  

We have developed a visible-light phototransistor with excellent photodetection characteristics and stability via atomic layer deposition (ALD) to add a thin layer of aluminum oxide (Al2O3) to quantum dot (QD)/zinc oxide (ZnO) films.


2021 ◽  
Author(s):  
Ran Zhao ◽  
Kai Zhang ◽  
Jiahao Zhu ◽  
Shuang Xiao ◽  
Wei Xiong ◽  
...  

Interface passivation is of the pivot to achieve high-efficiency organic metal halide perovskite solar cells (PSCs). Atomic layer deposition (ALD) of wide band gap oxides has recently shown great potential...


2015 ◽  
Vol 357 ◽  
pp. 635-642 ◽  
Author(s):  
Jhuma Gope ◽  
Vandana ◽  
Neha Batra ◽  
Jagannath Panigrahi ◽  
Rajbir Singh ◽  
...  

2010 ◽  
Vol 20 (18) ◽  
pp. 3099-3105 ◽  
Author(s):  
David J. Comstock ◽  
Steven T. Christensen ◽  
Jeffrey W. Elam ◽  
Michael J. Pellin ◽  
Mark C. Hersam

2015 ◽  
Vol 7 (24) ◽  
pp. 13154-13163 ◽  
Author(s):  
B. Ahmed ◽  
Muhammad Shahid ◽  
D. H. Nagaraju ◽  
D. H. Anjum ◽  
Mohamed N. Hedhili ◽  
...  

2012 ◽  
Vol 30 (1) ◽  
pp. 01A127 ◽  
Author(s):  
Annelies Delabie ◽  
Sonja Sioncke ◽  
Jens Rip ◽  
Sven Van Elshocht ◽  
Geoffrey Pourtois ◽  
...  

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