Electrodeposition of Cu-Ga Precursor Layer from Deep Eutectic Solvent for CuGaS2Solar Energy Thin Film

2014 ◽  
Vol 161 (6) ◽  
pp. D333-D338 ◽  
Author(s):  
Guanghai Niu ◽  
Sui Yang ◽  
Hongxing Li ◽  
Jie Yi ◽  
Minghao Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Deep Eutectic Solvent ◽  
Precursor Layer

Electrodeposition of Cu–Ga precursor layer for CuGaS2 solar energy thin film from alcohol solution

Ionics ◽  
2016 ◽  
Vol 23 (4) ◽  
pp. 1027-1033 ◽  
Author(s):  
Zhou Cao ◽  
Sui Yang ◽  
Mang Wang ◽  
Xiaopan Huang ◽  
Hongxing Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Energy ◽  
Alcohol Solution ◽  
Precursor Layer

Formation Chemistry of Polycrystalline Cu(InGa)Se2 Thin-Film Absorbers Prepared by Selenization of Cu-Ga/In Stacked Precursor Layers with H2Se Gas

1996 ◽  
Vol 426 ◽  
Author(s):  
K. Kushiya ◽  
S. Kuriyagawa ◽  
T. Kase ◽  
I. Sugiyama ◽  
M. Tachiyuki ◽  
...  
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Fabrication Process ◽  
Simplified Model ◽  
Cigs Thin Film ◽  
Precursor Layer ◽  
Graded Band Gap ◽  
Band Gap Structure ◽  
Selenization Process ◽  
Gap Structure

AbstractThe purpose of this study is to improve the reliability and reproducibility of our fabrication process for polycrystalline Cu(InGa)Se2 (CIGS) thin-film absorbers and to make a better absorber with higher efficiency. The current baseline process of selenization has been evaluated through the investigation of the formation chemistry of the device-quality CIGS thin-film absorbers with a graded band-gap structure. It has been verified that the current selenization process has been performed in a good balancing point with both Cu/III ratio and thickness of the precursor layer and the total amount of Se through H2Se gas incorporated from the surface during the selenization. A simplified model to explain the formation chemistry of the selenization in this study has been proposed.

Double Pulse Electrodeposition of Cu-Ga Precursor Layer for CuGaS2Solar Energy Thin Film

2013 ◽  
Vol 160 (10) ◽  
pp. D459-D464 ◽  
Author(s):  
Minghao Wang ◽  
Sui Yang ◽  
Hongxing Li ◽  
Jie Yi ◽  
Mingwei Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Double Pulse ◽  
Pulse Electrodeposition ◽  
Precursor Layer

Enhancement of photo‐conversion efficiency in Cu 2 ZnSn(S,Se) 4 thin‐film solar cells by control of ZnS precursor‐layer thickness

2015 ◽  
Vol 24 (3) ◽  
pp. 292-306 ◽  
Author(s):  
Gee Yeong Kim ◽  
Dae‐Ho Son ◽  
Trang Thi Thu Nguyen ◽  
Seokhyun Yoon ◽  
Minsu Kwon ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Layer Thickness ◽  
Conversion Efficiency ◽  
Thin Film Solar Cells ◽  
Precursor Layer

Controlled electrodeposition of Cu–Ga from a deep eutectic solvent for low cost fabrication of CuGaSe2 thin film solar cells

2011 ◽  
Vol 13 (10) ◽  
pp. 4292 ◽  
Author(s):  
Marc Steichen ◽  
Matthieu Thomassey ◽  
Susanne Siebentritt ◽  
Phillip J. Dale
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Low Cost ◽  
Deep Eutectic Solvent ◽  
Thin Film Solar Cells

scholarly journals Fabrication of CIGS thin film absorber by laser treatment of pre-deposited nano-ink precursor layer

2014 ◽  
Vol 134 ◽  
pp. 302-305 ◽  
Author(s):  
Sanjay R. Dhage ◽  
Manish Tak ◽  
Shrikant V. Joshi
Keyword(s):  
Thin Film ◽  
Laser Treatment ◽  
Cigs Thin Film ◽  
Precursor Layer

Thin Ag Precursor Layer-Assisted Co-Evaporation Process for Low-Temperature Growth of Cu(In,Ga)Se2 Thin Film

2019 ◽  
Vol 11 (35) ◽  
pp. 31923-31933 ◽  
Author(s):  
Gayeon Kim ◽  
Won Mok Kim ◽  
Jong-Keuk Park ◽  
Donghwan Kim ◽  
Hyeonggeun Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Evaporation Process ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Precursor Layer
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