Electrical Resistance Measurements and Microstructural Characterization of the Anode/Interconnect Contact in Simulated Anode-Side SOFC Conditions

2015 ◽  
Vol 162 (4) ◽  
pp. F387-F396 ◽  
Author(s):  
Anders Harthøj ◽  
Hossein Alimadadi ◽  
Tobias Holt ◽  
Per Møller
Keyword(s):  
Electrical Resistance ◽  
Microstructural Characterization ◽  
Anode Side ◽  
Electrical Resistance Measurements

Characterization of Phase Transitions Occurring in Solution Treated Ti-15Mo during Heating by Thermal Expansion and Electrical Resistance Measurements

2016 ◽  
Vol 879 ◽  
pp. 2318-2323 ◽  
Author(s):  
Pavel Zháňal ◽  
Petr Harcuba ◽  
Michal Hájek ◽  
Jana Šmilauerová ◽  
Jozef Veselý ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
Titanium Alloy ◽  
Phase Transitions ◽  
Electrical Resistance ◽  
Temperature Changes ◽  
Solution Treated ◽  
Electrical Resistance Measurements ◽  
Ongoing Phase

Metastable β titanium alloy Ti-15Mo was investigated in this study. In-situ electrical resistance and thermal expansion measurements conducted on solution treated material revealed influence of ongoing phase transitions on measured properties. The monotonicity of the dependence of electrical resistance on temperature changes at 225, 365 and 560 °C The thermal expansion deviates from linearity between 305 and 580 °C.

Microstructural characterization of CoPtCr/Cr thin film disks by cross-section TEM and elongated probe micro-diffraction

1991 ◽  
Vol 49 ◽  
pp. 762-763
Author(s):  
M.A. Parker ◽  
K.E. Johnson ◽  
C. Hwang ◽  
A. Bermea
Keyword(s):  
Magnetic Recording ◽  
Electron Probe ◽  
Microstructural Characterization ◽  
Crystallographic Structure ◽  
Recording Media ◽  
Layer By Layer ◽  
Cross Sectional ◽  
New Techniques ◽  
Polished Side

We have reported the dependence of the magnetic and recording properties of CoPtCr recording media on the thickness of the Cr underlayer. It was inferred from XRD data that grain-to-grain epitaxy of the Cr with the CoPtCr was responsible for the interaction observed between these layers. However, no cross-sectional TEM (XTEM) work was performed to confirm this inference. In this paper, we report the application of new techniques for preparing XTEM specimens from actual magnetic recording disks, and for layer-by-layer micro-diffraction with an electron probe elongated parallel to the surface of the deposited structure which elucidate the effect of the crystallographic structure of the Cr on that of the CoPtCr.XTEM specimens were prepared from magnetic recording disks by modifying a technique used to prepare semiconductor specimens. After 3mm disks were prepared per the standard XTEM procedure, these disks were then lapped using a tripod polishing device. A grid with a single 1mmx2mm hole was then glued with M-bond 610 to the polished side of the disk.

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

Microstructural characterization of a cast RENi5-based alloy

1993 ◽  
Vol 51 ◽  
pp. 1176-1177
Author(s):  
G. M. Micha ◽  
L. Zhang
Keyword(s):  
Electron Microscopy ◽  
Rare Earth ◽  
Microstructural Characterization ◽  
Binary Compound ◽  
Nickel Metal ◽  
Cast Material ◽  
Nickel Metal Hydride ◽  
Transmission Electron ◽  
Cast Condition

RENi5 (RE: rare earth) based alloys have been extensively evaluated for use as an electrode material for nickel-metal hydride batteries. A variety of alloys have been developed from the prototype intermetallic compound LaNi5. The use of mischmetal as a source of rare earth combined with transition metal and Al substitutions for Ni has caused the evolution of the alloy from a binary compound to one containing eight or more elements. This study evaluated the microstructural features of a complex commercial RENi5 based alloy using scanning and transmission electron microscopy.The alloy was evaluated in the as-cast condition. Its chemistry in at. pct. determined by bulk techniques was 12.1 La, 3.2 Ce, 1.5 Pr, 4.9 Nd, 50.2 Ni, 10.4 Co, 5.3 Mn and 2.0 Al. The as-cast material was of low strength, very brittle and contained a multitude of internal cracks. TEM foils could only be prepared by first embedding pieces of the alloy in epoxy.

Microstructural Characterization of Open-Pore Metal Foams of Pure Metals

2015 ◽  
Vol 52 (2) ◽  
pp. 83-107 ◽  
Author(s):  
B. S. Mocker ◽  
A. M. Matz ◽  
N. Jost ◽  
P. Krug
Keyword(s):  
Microstructural Characterization ◽  
Metal Foams ◽  
Pure Metals
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