Fabrication and Electrochemical Treatment Application of an Al-Doped PbO2Electrode with High Oxidation Capability, Oxygen Evolution Potential and Reusability

2015 ◽  
Vol 162 (10) ◽  
pp. E258-E262 ◽  
Author(s):  
Yijing Xia ◽  
Qizhou Dai ◽  
Mili Weng ◽  
Yue Peng ◽  
Jinming Luo ◽  
...  
Keyword(s):  
Oxygen Evolution ◽  
Electrochemical Treatment ◽  
High Oxidation ◽  
Treatment Application

Possibilities and Constraints of the Electrochemical Treatment of Thiophene on Low and High Oxidation Power Electrodes

2019 ◽  
Vol 33 (3) ◽  
pp. 1901-1909 ◽  
Author(s):  
F. Mehri ◽  
W. Sauter ◽  
U. Schröder ◽  
S. Rowshanzamir
Keyword(s):  
Electrochemical Treatment ◽  
High Oxidation

Preparation and electrochemical treatment application of Ti/Sb–SnO2-Eu&rGO electrode in the degradation of clothianidin wastewater

Chemosphere ◽  
2021 ◽  
Vol 265 ◽  
pp. 129126
Author(s):  
Dan Guo ◽  
Yongbo Guo ◽  
Yixuan Huang ◽  
Yongyang Chen ◽  
Xiaochun Dong ◽  
...  
Keyword(s):  
Electrochemical Treatment ◽  
Treatment Application

Room temperature-formed iron-doped nickel hydroxide on nickel foam as a 3D electrode for low polarized and high-current-density oxygen evolution

2018 ◽  
Vol 54 (26) ◽  
pp. 3262-3265 ◽  
Author(s):  
Chun Xian Guo ◽  
Chang Ming Li
Keyword(s):  
Oxygen Evolution ◽  
Nickel Hydroxide ◽  
High Performance ◽  
Room Temperature ◽  
High Current Density ◽  
Nickel Foam ◽  
Ni Foam ◽  
High Oxidation ◽  
Iron Doped ◽  
3D Electrode

Room temperature-formed iron-doped nickel hydroxide on Ni foam as a 3D electrode with fast gas dissipation and a high oxidation state of Ni for a high-performance oxygen evolution reaction is presented.

scholarly journals Parallel Electrochemical Treatment System and Application for Identifying Acid-Stable Oxygen Evolution Electrocatalysts

2015 ◽  
Vol 17 (2) ◽  
pp. 71-75 ◽  
Author(s):  
Ryan J. R. Jones ◽  
Aniketa Shinde ◽  
Dan Guevarra ◽  
Chengxiang Xiang ◽  
Joel A. Haber ◽  
...  
Keyword(s):  
Oxygen Evolution ◽  
Electrochemical Treatment ◽  
Treatment System ◽  
Stable Oxygen ◽  
Acid Stable

The Structure and Properties of MoSi2 Thin Film in Mos Process

1980 ◽  
Vol 38 ◽  
pp. 326-327
Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Large Scale ◽  
Process Development ◽  
Structure And Properties ◽  
Metal Silicides ◽  
High Oxidation ◽  
Important Approach ◽  
High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

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