Al2O3-Passivated Graded-Barrier AlxGa1-xN/AlN/GaN/Si Heterostructure Field-Effect Transistor by Hydrogen Peroxide Oxidization Method
2017 ◽
Vol 6
(12)
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pp. Q166-Q170
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1998 ◽
Vol 16
(5)
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pp. 2675
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2015 ◽
Vol 209
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pp. 658-663
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2020 ◽
Vol 83
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pp. 29-34
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1994 ◽
Vol 296
(2)
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pp. 163-170
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2019 ◽
Vol 139
(3)
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pp. 207-210
2010 ◽
Vol E93-C
(5)
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pp. 540-545
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2019 ◽
Vol 24
(4)
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pp. 407-414