Performance Enhancement for Charge Trapping Memory by Using Al2O3/HfO2/Al2O3Tri-Layer High-κ Dielectrics and High Work Function Metal Gate
2018 ◽
Vol 7
(6)
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pp. N91-N95
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2010 ◽
Vol 54
(10)
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pp. 1160-1165
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2005 ◽
Vol 52
(12)
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pp. 2654-2659
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2005 ◽
Vol 26
(11)
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pp. 796-798
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Keyword(s):
Charge trapping effect at the contact between a high-work-function metal and Ta2O5 high-k dielectric
2008 ◽
Vol 41
(10)
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pp. 105302
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Keyword(s):
High K
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