Edge-Contact Formed by Oxygen Plasma and Rapid Thermal Annealing to Improve Metal-Graphene Contact Resistance

2018 ◽  
Vol 7 (2) ◽  
pp. M11-M15 ◽  
Author(s):  
Xiangyu Yan ◽  
Kunpeng Jia ◽  
Yajuan Su ◽  
Yuanjun Ma ◽  
Jun Luo ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Oxygen Plasma ◽  
Edge Contact ◽  
Improve Metal

scholarly journals Effects of Different Ion Irradiation on the Contact Resistance of Pd/Graphene Contacts

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3928 ◽  
Author(s):  
Kashif Shahzad ◽  
Kunpeng Jia ◽  
Chao Zhao ◽  
Dahai Wang ◽  
Muhammad Usman ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Contact Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Reaction ◽  
Ion Irradiation ◽  
Metal Deposition ◽  
Pristine Graphene ◽  
Bombardment Energy ◽  
Induced Defects

The effect of ion-induced defects on graphene was studied to investigate the contact resistance of 40 nm palladium (Pd) contacting on graphene. The defect development was considered and analyzed by irradiating boron (B), carbon (C), nitrogen (N2), and argon (Ar) ions on as-transferred graphene before metallization. The bombardment energy was set at 1.5 keV and ion dose at 1 × 1014 ions/cm2. The defect yields under different ion irradiation conditions were examined by Raman spectroscopy. Although, dissolution process occurs spontaneously upon metal deposition, chemical reaction between metal and graphene is more pronounced at higher temperatures. The rapid thermal annealing (RTA) treatment was performed to improve the Pd/graphene contact after annealing at 450 °C, 500 °C, 550 °C, and 600 °C. The lowest contact resistance of 95.2 Ω-µm was achieved at 550 °C RTA with Ar ion irradiation. We have proved that ion irradiation significantly enhance the Pd/graphene contact instead of pd/pristine graphene contact. Therefore, in view of the contention of results ion induced defects before metallization plus the RTA served an excellent purpose to reduce the contact resistance.

Novel resistance reduction and phase changes of contacts to n-type InP by rapid thermal annealing

2002 ◽  
Vol 744 ◽  
Author(s):  
J.S. Huang ◽  
T. Nguyen ◽  
N. Bar-Chaim ◽  
C.B. Vartuli ◽  
S. Anderson ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Thermal Annealing ◽  
Interfacial Reaction ◽  
Rapid Thermal Annealing ◽  
Phase Changes ◽  
Long Wavelength ◽  
Transmission Electron ◽  
Resistance Reduction ◽  
Scanning Transmission ◽  
Metallic Compounds

ABSTRACTWe studied the influence of n-metal alloy on the long wavelength InP device performance. Various alloy schemes of rapid thermal annealing (RTA) were experimented to obtain the optimized contact resistance for the n-InP/AuGe/Ni/Au/Cr/Au metallization systems. Significant resistance reduction was achieved at 390°C for 45sec with wafer flattening step at 310°C. Using scanning transmission electron microscopy (STEM) and Auger electron spectroscopy (AES) analyses, we showed that resistance was correlated with interfacial reaction at the n-InP/metal. For the high resistance devices, little interfacial reaction between n-InP and Au occurred. For the low resistance devices, significant out-diffusion of P in the bottom Au and Ni layers occurred, forming Au-P and Ni-P metallic compounds. In addition, accumulation of Ge in the Ni layer was also detected. We suggest that Ni-P is very critical in obtaining low contact resistance for n-InP.

scholarly journals A Study on the Chemistry of Epitaxial Ti3SiC2 Formation on 4H-SiC Using Al-Ti Annealing

2015 ◽  
Vol 821-823 ◽  
pp. 432-435 ◽  
Author(s):  
Tony Abi-Tannous ◽  
Maher Soueidan ◽  
Gabriel Ferro ◽  
Mihai Lazar ◽  
Berangère Toury ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Contact Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Specific Contact Resistance ◽  
Free Sample ◽  
Elemental Analyses ◽  
Specific Contact ◽  
P Type ◽  
Al Oxide

In order to form Ti3SiC2 on 4H-SiC(0001) 8°-off, 200 nm of Ti30Al70 was deposited onto SiC substrates by magnetron sputtering from pure Ti30Al70 targets. The samples were then annealed at 1000°C for 10 min under Ar atmosphere in a Rapid Thermal Annealing (RTA) furnace. Structural analyses reveal the formation of epitaxial hexagonal Ti3SiC2 (0001) oriented. Elemental analyses show that high amount of Al and O elements are present inside the deposit. Obviously, the formation of Ti3SiC2 is accompanied by parasitic Al oxide, probably due to some unwanted oxygen residual in the RTA chamber. By using proper backing steps before the annealing, the deposit is not anymore composed of only Ti3SiC2 but accompanied with other compounds (Al3Ti, and Al). On the oxide-free sample, the specific contact resistance ρc of the Ti3SiC2 based contact on p-type 4H-SiC (having Na= 2×1019 cm-3) was measured to be as low as 6×10-5 Ω.cm2.

Direct Silicidation of Co on Si by Rapid Thermal Annealing

1985 ◽  
Vol 52 ◽  
Author(s):  
M. Tabasky ◽  
E. S. Bulat ◽  
B. M. Ditchek ◽  
M. A. Sullivan ◽  
S. Shatas
Keyword(s):  
Contact Resistance ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Cobalt Silicide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Low Resistivity ◽  
Dopant Redistribution

ABSTRACTRapid thermal annealing is used to form cobalt silicide directly on unimplanted as well as B, As, and P implanted wafers. The films are characterized by sheet resistance, X-ray diffraction, SEM, SIMS, and contact resistance measurements. The direct silicidation of cobalt on Si by rapid thermal annealing yields smooth, low resistivity films with minimal dopant redistribution.

The Effects of Ion Beam Mixing on Rapid Thermal Annealed Ohmic Contacts to N-GaAs

1990 ◽  
Vol 181 ◽  
Author(s):  
Seemi Kazmi ◽  
Roman V. Kruzelecky ◽  
David A. Thompson
Keyword(s):  
Surface Morphology ◽  
Contact Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Depth Profiling ◽  
Specific Contact Resistance ◽  
Ion Beam Mixing ◽  
Specific Contact

ABSTRACTNi/Ge/Au and Ni/Ge/Pd contacts have been made on 1018 cm-3 n-type GaAs. The contacts were subjected to ion beam mixing through the metallization using 70-130 keV Se+ ions and subsequently subjected to rapid thermal annealing (RTA). These are compared with unimplanted contacts produced by RTA techniques on the same substrate. The specific contact resistance ,pc, has been measured for the two systems. In addition, the contacts have been studied using Auger depth profiling and SEM studies have been used to determine surface morphology. Values of pc ∽ 10-6 -10-7 ohm-cm2 have been measured. It is observed that ion beam mixing or the addition of a Ti overlayer (to the Ni/Ge/Au) improves the contact morphology.

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