Contact Resistance of Screen Printed Ag-Contacts to Si Emitters: Mathematical Modeling and Microstructural Characterization

2014 ◽  
Vol 161 (8) ◽  
pp. E3180-E3187 ◽  
Author(s):  
Ann Mari Svensson ◽  
Sara Olibet ◽  
Dominik Rudolph ◽  
Enrique Cabrera ◽  
Jesper Friis ◽  
...  
Keyword(s):  
Mathematical Modeling ◽  
Contact Resistance ◽  
Microstructural Characterization ◽  
Screen Printed

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

Impact of boron doping profiles on the specific contact resistance of screen printed Ag–Al contacts on silicon

2015 ◽  
Vol 142 ◽  
pp. 2-11 ◽  
Author(s):  
Elmar Lohmüller ◽  
Sabrina Werner ◽  
Rene Hoenig ◽  
Johannes Greulich ◽  
Florian Clement
Keyword(s):  
Contact Resistance ◽  
Boron Doping ◽  
Specific Contact Resistance ◽  
Specific Contact ◽  
Doping Profiles ◽  
Screen Printed

scholarly journals Screen Printed Metallization of Silicon Solar Cells

1980 ◽  
Vol 7 (1-3) ◽  
pp. 107-111 ◽  
Author(s):  
L. Frisson ◽  
Ph. Lauwers ◽  
R. Mertens ◽  
R. Van Overstraeten ◽  
R. Govaerts
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Contact Resistance ◽  
Process Optimization ◽  
Screen Printing ◽  
Silicon Solar Cells ◽  
Printing Process ◽  
Screen Printed

This paper presents a screen printing process for the metallization of silicon solar cells. The physics and construction of a classical solar cell are reviewed. The results obtained with a screen printing process are comparable with other, more expensive technologies. This technology does not introduce an additional contact resistance on silicon. The process optimization and the influence of different parameters are discussed.

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