Measurement of Optical Constants of Wet Porous Silicon Using In Situ Photoconduction

2016 ◽  
Vol 5 (3) ◽  
pp. P190-P196 ◽  
Author(s):  
Bernard Gelloz ◽  
Hiroki Fuwa ◽  
Lianhua Jin
Keyword(s):  
Porous Silicon ◽  
Optical Constants

(Invited) Porous Silicon Dissolution Monitoring and Optical Constants Measurement Using in Situ Photoconduction in HF

2016 ◽  
Vol 75 (1) ◽  
pp. 63-75
Author(s):  
B. Gelloz ◽  
K. Ichimura ◽  
H. Fuwa ◽  
E. Kondoh ◽  
L. Jin
Keyword(s):  
Porous Silicon ◽  
Optical Constants ◽  
Silicon Dissolution

Real-Time Analysis Of In-Situ Spectroscopic Ellipsometric Data During Mbe Growth Of III-V Semiconductors

1991 ◽  
Vol 222 ◽  
Author(s):  
B. Johs ◽  
J. L. Edwards ◽  
K. T. Shiralagi ◽  
R. Droopad ◽  
K. Y. Choi ◽  
...  
Keyword(s):  
Real Time ◽  
Optical Constants ◽  
Growth Parameters ◽  
Ex Situ ◽  
Time Analysis ◽  
Mbe Growth ◽  
In Situ Data ◽  
Real Time Analysis

ABSTRACTA modular spectroscopic ellipsometer, capable of both in-situ and ex-situ operation, has been used to measure important growth parameters of GaAs/AIGaAs structures. The ex-situ measurements provided layer thicknesses and compositions of the grown structures. In-situ ellipsometric measurements allowed the determination of growth rates, layer thicknesses, and high temperature optical constants. By performing a regression analysis of the in-situ data in real-time, the thickness and composition of an AIGaAs layer were extracted during the MBE growth of the structure.

scholarly journals Porous Silicon Structural Evolution from In-Situ Luminescence and Raman Measurements

1996 ◽  
Vol 431 ◽  
Author(s):  
D. R. Tallant ◽  
M. J. Kelly ◽  
T. R. Guilinger ◽  
R. L. Simpson
Keyword(s):  
Porous Silicon ◽  
Silicon Surface ◽  
Structural Evolution ◽  
Surface Oxidation ◽  
Ethanol Solution ◽  
Nonradiative Recombination ◽  
Photoluminescence Intensity ◽  
Exciton Migration ◽  
Photoluminescence Mechanism

AbstractWe performed in-situ photoluminescence and Raman measurements on an anodized silicon surface in the HF/ethanol solution used for anodization. The porous silicon thereby produced, while resident in HF/ethanol, does not immediately exhibit intense photoluminescence. Intense photoluminescence develops spontaneously in HF/ethanol after 18–24 hours or with replacement of the HF/ethanol with water. These results support a quantum confinement mechanism in which exciton migration to traps and nonradiative recombination dominates the de-excitation pathways until silicon nanocrystals are physically separated and energetically decoupled by hydrofluoric acid etching or surface oxidation. The porous silicon surface, as produced by anodization, shows large differences in photoluminescence intensity and peak wavelength over millimeter distances. Parallel Raman measurements implicate nanometer-size silicon particles in the photoluminescence mechanism.

Magnetic Properties of Ferrous Ferric Oxide Confined in Porous Silicon

2010 ◽  
Vol 663-665 ◽  
pp. 1142-1145
Author(s):  
Yuan Ming Huang ◽  
Bao Gai Zhai ◽  
Qing Lan Ma ◽  
Ming Meng
Keyword(s):  
Electron Microscopy ◽  
Magnetic Properties ◽  
Iron Oxide ◽  
Porous Silicon ◽  
Ferrous Iron ◽  
Silicon Film ◽  
X Ray ◽  
Loop Measurement ◽  
Scanning Electron

During the chemical synthesis nanometer-sized particles of ferrous iron oxide were in situ infiltrated into the mesopores in a porous silicon film. The microstructures of porous silicon and the magnetic properties of the nanometer-sized particles of the ferrous iron oxide were characterized with scanning electron microscopy, X-ray diffractometry, and the hysteresis loop measurement, respectively. Our results have demonstrated that the magnetic properties of the nanometer-sized Fe3O4 particles can be dramatically modified when they are confined into the mesopores of the porous silicon film.

Fabrication and properties of in situ silicon nitride nanowires reinforced porous silicon nitride (SNNWs/SN) composites

2018 ◽  
Vol 38 (6) ◽  
pp. 2671-2675 ◽  
Author(s):  
Duan Li ◽  
Bin Li ◽  
Xuejin Yang ◽  
Shitao Gao ◽  
Yuanyi Zheng
Keyword(s):  
Silicon Nitride ◽  
Porous Silicon
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