Synchrotron White-Beam X-Ray Topography Analysis of the Defect Structure of HVPE-GaN Substrates

2015 ◽  
Vol 4 (8) ◽  
pp. P324-P330 ◽  
Author(s):  
L. Kirste ◽  
A. N. Danilewsky ◽  
T. Sochacki ◽  
K. Köhler ◽  
M. Zajac ◽  
...  
Keyword(s):  
Defect Structure ◽  
X Ray ◽  
White Beam ◽  
Topography Analysis

(Invited) Synchrotron White-Beam X-Ray Topography Analysis of the Defect Structure of HVPE-GaN Substrates

2015 ◽  
Vol 66 (1) ◽  
pp. 93-106 ◽  
Author(s):  
L. Kirste ◽  
A. N. Danilewsky ◽  
T. Sochacki ◽  
K. Kohler ◽  
M. Zajac ◽  
...  
Keyword(s):  
Defect Structure ◽  
X Ray ◽  
White Beam ◽  
Topography Analysis

Synchrotron white beam x-ray topography analysis of MBE grown CdTe/CdTe (111)B

1993 ◽  
Vol 22 (8) ◽  
pp. 943-949 ◽  
Author(s):  
T. Fanning ◽  
M. B. Lee ◽  
L. G. Casagrande ◽  
D. Di Marzio ◽  
M. Dudley
Keyword(s):  
X Ray ◽  
White Beam ◽  
Topography Analysis

SEM Characterization of Silicon Layers Grown on Carbon Foil

2009 ◽  
Vol 156-158 ◽  
pp. 473-476 ◽  
Author(s):  
Sergei K. Brantov ◽  
A.V. Eltzov ◽  
Olga V. Feklisova ◽  
Eugene B. Yakimov
Keyword(s):  
Dislocation Density ◽  
Defect Structure ◽  
Growth Direction ◽  
Carbon Foil ◽  
Twin Boundaries ◽  
X Ray ◽  
Electron Backscattering Diffraction ◽  
Silicon Ribbon ◽  
Selective Chemical

Characterization of defect structure in silicon ribbon grown on carbon foil has been carried out. The structure of grown Si layers and a dislocation density in these layers have been studied using selective chemical etching and the Electron Backscattering Diffraction. It is observed that the layers consist of rather large grains, the majority of which is elongated along the growth direction with a similar surface orientation and with a misorientation angle between neighboring grains of 60º. This means that such grains are separated by the (111) twin boundaries. The dislocation density in different grains is found to vary from 102 to 107cm-2. The energy dispersive X-Ray microanalysis has shown that some twin boundaries are enriched with carbon.

Synchrotron white beam x-ray topography (SWBXT) and high resolution triple axis diffraction studies on AlN layers grown on 4H- and 6H-SiC seeds

2004 ◽  
Vol 831 ◽  
Author(s):  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
Rafael Dalmau ◽  
Raoul Schlesser ◽  
Zlatko Sitar
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Large Diameter ◽  
Laser Diodes ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
X Ray ◽  
White Beam ◽  
Strain Data ◽  
Growth Experiments

ABSTRACTFor nitride based devices such as LEDs, high power FETs and laser diodes, single crystal substrates of AlN are highly desirable. While the sublimation technique is suitable for growing bulk AlN crystals, appropriate seeds are also necessary for growing large diameter oriented boules. 4H- and 6H-SiC substrates which are readily available commercially can potentially be implemented as seeds for bulk AlN growth. However, issues regarding SiC decomposition at high temperatures, thermal expansion mismatch, single crystal growth, etc. need to be addressed. Towards this end, a series of growth experiments have been carried out in a resistively heated reactor using on and off-axis 4H- and 6H-SiC substrates as seeds for AlN growth from the vapor phase. Several hundred microns thick AlN layers have been grown under different growth conditions. Synchrotron white beam x-ray topography (SWBXT) has been used to map the defect distribution in the grown layers and high resolution triple axis x-ray diffraction (HRTXD) experiments were carried out to record reciprocal space maps from which tilt, mismatch and strain data can be obtained. These results are analyzed with respect to the growth conditions in order to gain a better understanding of this growth process.

Sign in / Sign up

Export Citation Format

Share Document