The Structural and Photoelectrical Properties of Gallium Oxide Thin Film Grown by Radio Frequency Magnetron Sputtering

2019 ◽  
Vol 8 (7) ◽  
pp. Q3086-Q3090 ◽  
Author(s):  
Shujie Jiao ◽  
Hongliang Lu ◽  
Xianghu Wang ◽  
Yiyin Nie ◽  
Dongbo Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Gallium Oxide ◽  
Radio Frequency Magnetron ◽  
Oxide Thin Film ◽  
Radio Frequency Magnetron Sputtering ◽  
Photoelectrical Properties

Cathodoluminescence Study of Gadolinium–Doped Yttrium Oxide Thin Films Deposited By Radio–Frequency Magnetron Sputtering

2003 ◽  
Vol 764 ◽  
Author(s):  
J. D. Fowlkes ◽  
P. D. Rack ◽  
R. Bansal ◽  
J.M. Fitz–Gerald
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Yttrium Oxide ◽  
Radiative Decay ◽  
Radio Frequency Magnetron ◽  
Oxide Thin Film ◽  
Radio Frequency Magnetron Sputtering ◽  
Ultraviolet Emission ◽  
Cathodoluminescence Study

AbstractA multi–layer gadolinium–doped yttrium oxide thin film was deposited in a combinatorial fashion on a Si (001) substrate using radio–frequency magnetron sputtering. Alternating layers of Y2O3 and Gd were deposited for a total of 9 layers. The film was homogenized in composition by an 850°C 12 hour thermal treatment producing a range of composition from Y1.96Gd0.04O3-Y1.54Gd0.46O3 in a single film. Ultraviolet emission with a peak wavelength at 314-315nm was observed from the gadolinium 8S7/2 - 6P7/2 transition via cathodoluminescence (CL) excitation. The CL–induced intensity was found to be maximum at 9 at% Gd (Y1.82Gd0.18O3) and an optimized electron probe of Vacc = 13 keV was determined for the 1 μm thick thin film. Gadolinium activator saturation was observed for sample current density greater than 0.03 μA/cm2. Non- radiative decay via thermal pathways is suspected for the observed activator saturation.

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