Small Thermal Quenching, Narrow Green Emitting γ-AlON: Ce3+, Mn2+ Phosphor: Luminescence and Energy Transfer

2018 ◽  
Vol 7 (12) ◽  
pp. R215-R223 ◽  
Author(s):  
Quan Dong ◽  
Fengli Yang ◽  
Jun Cui ◽  
Hong Ming ◽  
Fu Du ◽  
...  
2021 ◽  
Author(s):  
Peng Du ◽  
Laihui Luo ◽  
Yafei Hou ◽  
Weiping Li

Rational control of thermal quenching performance is crucial for achieving high quality luminescent thermometer. Herein, we report the Tb3+/Yb3+-coactivated Y2Mo3O12 (YMO) negative thermal expansion (NTE) microparticles with color-tunable emissions. Irradiated...


2020 ◽  
Vol 94 (1) ◽  
pp. 220-225
Author(s):  
Jingjing Ru ◽  
Bing Zhao ◽  
Nan Ye ◽  
Shaoming Ying ◽  
Jianzhong Chen

2016 ◽  
Vol 40 (5) ◽  
pp. 4735-4743 ◽  
Author(s):  
Wenjin Xu ◽  
Xin Ding ◽  
Yuhua Wang

In Ca9La(GeO4)0.75(PO4)6:Ce3+/Tb3+, because of the energy transfer, when temperature increases, intensity of Tb3+ shows slightly enhancement instead of thermal quenching.


2016 ◽  
Vol 4 (13) ◽  
pp. 2506-2512 ◽  
Author(s):  
X. Y. Liu ◽  
H. Guo ◽  
Y. Liu ◽  
S. Ye ◽  
M. Y. Peng ◽  
...  

Tunable white-emission due to efficient energy transfer has been demonstrated in Bi3+/Mn2+co-doped borosilicate glasses.


Author(s):  
Bing Yan ◽  
Yi Wei ◽  
Wei Wang ◽  
Meiqian Fu ◽  
Guogang Li

The Eu3+→Mn4+ energy transfer strategy is designed in the Lu3Al5O12 garnet structure to achieve color-adjustable narrow emission from orangish-red to deep-red light and remarkable thermal quenching improvement for optical thermometry sensors.


1993 ◽  
Vol 301 ◽  
Author(s):  
Tong Zhang ◽  
J. Sun ◽  
N.V. Edwards ◽  
D.E. Moxey ◽  
R.M. Kolbas ◽  
...  

ABSTRACTSharp photoluminescence from the intra-4f shell of Er3+ is observed from erbium doped AlxGal-xAs (0 ≤x ≤ 1) grown by molecular beam epitaxy. The intensity of the luminescence from the erbium is strongly dependent on the aluminum composition with a maximum at x ≈ 0.6. We will present a model that explains the variation in intensity based on the energy transfer coupling efficiency between the host semiconductor and the optically active erbium ions. The coupling efficiency is dominated by the alignment or misalignment of the erbium energy levels with the energy bands of the host semiconductor and by the excess carrier lifetime in the host. The data and model, which are presented here for the first time, are consistent with our previous work on the effects of co-doping with Be or Si and with other workers' measurements of thermal quenching in rare earth doped semiconductors.


2011 ◽  
Vol 158 (2) ◽  
pp. J1 ◽  
Author(s):  
Ying-Chien Fang ◽  
Sheng-Yuan Chu ◽  
Po-Ching Kao ◽  
You-Ming Chuang ◽  
Zong-Liang Zeng

2019 ◽  
Vol 7 (23) ◽  
pp. 1901187 ◽  
Author(s):  
Rui Shi ◽  
Lixin Ning ◽  
Zhiqiang Wang ◽  
Jiatang Chen ◽  
Tsun‐Kong Sham ◽  
...  

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