Superior Electrochemical Performance of Amorphous Titanium Niobium Oxide Thin Films for Li-Ion Thin Film Batteries

2018 ◽  
Vol 165 (5) ◽  
pp. A764-A772 ◽  
Author(s):  
V. Daramalla ◽  
G. Venkatesh ◽  
B. Kishore ◽  
N. Munichandraiah ◽  
S. B. Krupanidhi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrochemical Performance ◽  
Niobium Oxide ◽  
Oxide Thin Films ◽  
Thin Film Batteries ◽  
Li Ion

scholarly journals Synthesis, Crystallography, Microstructure, Crystal Defects, Optical and Optoelectronic Properties of ZnO:CeO2 Mixed Oxide Thin Films

Photonics ◽  
2020 ◽  
Vol 7 (4) ◽  
pp. 112
Author(s):  
Qais M. Al-Bataineh ◽  
Mahmoud Telfah ◽  
Ahmad A. Ahmad ◽  
Ahmad M. Alsaad ◽  
Issam A. Qattan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Mixed Oxide ◽  
Visible Region ◽  
Functional Materials ◽  
Crystal Defects ◽  
Optoelectronic Properties ◽  
Oxide Thin Films ◽  
Pure Ceo2

We report the synthesis and characterization of pure ZnO, pure CeO2, and ZnO:CeO2 mixed oxide thin films dip-coated on glass substrates using a sol-gel technique. The structural properties of as-prepared thin film are investigated using the XRD technique. In particular, pure ZnO thin film is found to exhibit a hexagonal structure, while pure CeO2 thin film is found to exhibit a fluorite cubic structure. The diffraction patterns also show the formation of mixed oxide materials containing well-dispersed phases of semi-crystalline nature from both constituent oxides. Furthermore, optical properties of thin films are investigated by performing UV–Vis spectrophotometer measurements. In the visible region, transmittance of all investigated thin films attains values as high as 85%. Moreover, refractive index of pure ZnO film was found to exhibit values ranging between 1.57 and 1.85 while for CeO2 thin film, it exhibits values ranging between 1.73 and 2.25 as the wavelength of incident light decreases from 700 nm to 400 nm. Remarkably, refractive index of ZnO:CeO2 mixed oxide-thin films are tuned by controlling the concentration of CeO2 properly. Mixed oxide-thin films of controllable refractive indices constitute an important class of smart functional materials. We have also investigated the optoelectronic and dispersion properties of ZnO:CeO2 mixed oxide-thin films by employing well-established classical models. The melodramatic boost of optical and optoelectronic properties of ZnO:CeO2 mixed oxide thin films establish a strong ground to modify these properties in a skillful manner enabling their use as key potential candidates for the fabrication of scaled optoelectronic devices and thin film transistors.

Preparation and Properties of Niobate Thin Films from Nanosheets

2010 ◽  
Vol 177 ◽  
pp. 201-203
Author(s):  
Jing Chu ◽  
Yu Lin Li ◽  
Bing Xu ◽  
Na Zhang ◽  
Qiang Li
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Phase Structure ◽  
Niobium Oxide ◽  
Oxide Thin Films ◽  
Transmittance Spectra ◽  
Different Thickness ◽  
Soaking Temperature

Niobium oxide thin films were successfully synthesized starting from niobate nanosheets. The microstructure of as-prepared nanosheets was observed by TEM. The morphology of niobate thin films was investigated by SEM. The phase structure was determined by XRD. The transmittance spectra of as-obtained niobium oxide thin films were measured, and the optical properties were studied. The influences of different thickness on optical properties were also analyzed. As-prepared niobium thin films were treated by being heated at different temperature. The effects of soaking temperature on the structure and optical properties of niobium oxide thin films were discussed in detail.

scholarly journals Thin Film Batteries: Origin of Degradation in Si-Based All-Solid-State Li-Ion Microbatteries (Adv. Energy Mater. 30/2018)

2018 ◽  
Vol 8 (30) ◽  
pp. 1870134 ◽  
Author(s):  
Chunguang Chen ◽  
Jos F. M. Oudenhoven ◽  
Dmitri L. Danilov ◽  
Egor Vezhlev ◽  
Lu Gao ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Thin Film Batteries ◽  
Li Ion ◽  
Energy Mater

Improved electrochemical performance of LiCoO2 electrodes for high-voltage operations by Ag thin film coating via magnetron sputtering

MRS Advances ◽  
2018 ◽  
Vol 3 (60) ◽  
pp. 3513-3518 ◽  
Author(s):  
Taner Zerrin ◽  
Mihri Ozkan ◽  
Cengiz S. Ozkan
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Electrochemical Performance ◽  
High Voltage ◽  
Coulombic Efficiency ◽  
High Capacity ◽  
Interface Layer ◽  
Li Ion Batteries ◽  
Electrode Structure ◽  
Li Ion

ABSTRACTIncreasing the operation voltage of LiCoO2 (LCO) is a direct way to enhance the energy density of the Li-ion batteries. However, at high voltages, the cycling stability degrades very fast due to the irreversible changes in the electrode structure, and formation of an unstable solid electrolyte interface layer. In this work, Ag thin film was prepared on commercial LCO cathode by using magnetron sputtering technique. Ag coated electrode enabled an improved electrochemical performance with a better cycling capability. After 100 cycles, Ag coated LCO delivers a discharge capacity of 106.3 mAh g-1 within 3 - 4.5 V at C/5, which is increased by 45 % compared to that of the uncoated LCO. Coating the electrode surface with Ag thin film also delivered an improved Coulombic efficiency, which is believed to be an indication of suppressed parasitic reactions at the electrode interface. This work may lead to new methods on surface modifications of LCO and other cathode materials to achieve high-capacity Li-ion batteries for high-voltage operations.

scholarly journals Reliability enhancement in thin film transistors using Hf and Al co-incorporated ZnO active channels deposited by atomic-layer-deposition

RSC Advances ◽  
2018 ◽  
Vol 8 (60) ◽  
pp. 34215-34223
Author(s):  
So-Yeong Na ◽  
Sung-Min Yoon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Reliability Enhancement ◽  
Active Channels

Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented.

Preparation of rare-earth thulium doped tin-oxide thin films and their applications in thin film transistors

2019 ◽  
Vol 493 ◽  
pp. 63-69 ◽  
Author(s):  
Jin-hua Ren ◽  
Yu-ting Huang ◽  
Kai-wen Li ◽  
Jie Shen ◽  
Wan-yu Zeng ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Rare Earth ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Films
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